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US5342737A Expired / Lapsed US ⏱️ 0.0 years remaining

High aspect ratio metal microstructures and method for preparing the same

Assignee: Science Applications International Corp SAIC
•
Filing: 1992-04-27
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Granted: 1994-08-30
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Expires: 2012-04-27
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Abstract

Abstract High aspect ratio metal microstructures may be prepared by a method involving (i) forming a layer of a photoresist on a substrate; (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

Inventors

  • 👤 Jacque H. Georger, Jr.
  • 👤 Martin C. Peckerar
  • 👤 Milton L. Rebbert
  • 👤 Jeffrey M. Calvert
  • 👤 James J. Hickman

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 02:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F1/00; G03F1/22; G03F7/26; G03F7/40; Y; Y10; Y10S; Y10S414/00; Y10S414/123; Y10S428/00; Y10S428/922; Y10S428/923; Y10T; Y10T428/00; Y10T428/12; Y10T428/12292

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 115 words
A method for preparing a high aspect ratio metal microstructure, comprising: (i) forming a layer of a photoresist on a substrate; (ii) exposing said layer to actinic radiation in an imagewise manner to obtain an exposed layer and developing said exposed layer to obtain a surface which comprises an area having no remaining photoresist and an area covered with photoresist, wherein the photoresist, remaining in said area covered with photoresist, is characterized by having a top surface and exposed sides; and (iii) metallizing to form a layer of metal on said exposed sides of said photoresist, wherein said metal is selected from the group consisting of Ni, Pd, Cu, Pt, Au, NiB, NiP, and permalloy.
Claim 2
Independent Claim 115 words
A method for preparing a high aspect ratio metal microstructure, comprising: (i) forming a layer of a photoresist on a substrate; (ii) exposing said layer to actinic radiation in an imagewise manner to obtain an exposed layer and developing said exposed layer to obtain a surface which comprises an area having no remaining photoresist and an area covered with photoresist, wherein the photoresist, remaining in said area covered with photoresist, is characterized by having a top surface and exposed sides; and (iii) metallizing to form a layer of metal on said exposed sides of said photoresist, wherein said metal is selected from the group consisting of Ni, Pd, Cu, Pt, Au, NiB, NiP, and permalloy.
Claim 3
Dependent Claim 28 words
The method of claim 1, wherein said exposing to actinic radiation in an imagewise manner is carried out by exposing said layer to actinic radiation through a mask.
Claim 4
Dependent Claim 37 words
The method of claim 2, wherein said mask is a pattern of circular dots having a diameter of 0.25 to 13 μm, spaced at a distance of 5 to 10,000 μm between the centers of nearest neighbors.
Claim 5
Dependent Claim 16 words
The method of claim 1, wherein said layer of photoresist is 0.5 to 30 μm thick.
Claim 6
Dependent Claim 16 words
The method of claim 1, wherein said layer of metal is 100 to 10,000 Å thick.
Claim 7
Dependent Claim 18 words
The method of claim 1, further comprising: (iv) removing said photoresist remaining in said area covered with photoresist.
Claim 8
Dependent Claim 11 words
The method of claim 1, wherein said metallizing is electroless plating.
Claim 9
Dependent Claim 30 words
The method of claim 1, wherein said metallizing selectively forms said layer of metal on said exposed sides of said photoresist without forming a metal layer on said top surface.

References Cited (Backward Citations)

US4687730A Cited
JPH025522A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-08-29 1998-02-28 1998-08-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-08-29 2002-02-28 2002-08-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-08-29 2006-02-28 2006-08-30 $7700.00 Window Closed / Lapsed

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