X-band bipolar junction transistor amplifier

Claim 1

An X-band low-noise, small-signal amplifier for operation in the frequency range of 8-12.5 GHz, comprising: input means for receiving an X-band signal, said input means including input and output means and an input impedance matching network; said input impedance matching network including a series connection of a first inductor, a first capacitor and a second inductor extending from the BJT to the input terminal in that ordering third inductor connected between the ground and the connection point of said first capacitor and said second inductor, and a second capacitor connected between the ground and input terminals; a two port bipolar junction transistor (BJT) being capable of operating between 8 and 12.5 GHz and having an input electrode, an output electrode, and a ground electrode, said input electrode being connected for receiving said signal from said input means, said output electrode delivering an amplified signal from said transistor, and said ground electrode being grounded; and output means for receiving said amplified signal from said output electrode and providing said amplified signal to further circuitry, said output means including second input and output terminals and an output impedance matching network; said output impedance matching network including a series connection of a fourth inductor, a third capacitor and a fifth inductor extending from the BJT to the second output terminal in that order, a sixth inductor connected between the ground and the connection point of said third capacitor and said fifth inductor, and a fourth capacitor connected between the ground and the second output terminal; wherein all the foregoing components we disposed on a dielectric board, wherein each said inductor comprises a microstrip formed on said board, and wherein at least one of said capacitors is formed by a pair of cladding portions formed on opposite sides of said board.