US5338423A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of eliminating metal voiding in a titanium nitride/aluminum processing
Assignee: IXYS Intl Ltd
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Filing: 1992-11-06
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Granted: 1994-08-16
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Expires: 2012-11-06
Abstract
Abstract The present invention concerns a method of preventing the staining and voiding in an aluminum layer. This staining and voiding was found to be caused by cross-contamination of nitrogen from other processing steps in a multi-chambered wafer processing device. The present invention avoids the staining and voiding by introducing a pumping-out step of an aluminum layer sputtering chamber to remove some of the nitrogen from the aluminum layer deposition chamber before sputtering the aluminum layer onto the silicon wafer. Alternately, the temperature of the aluminum layer deposition step can be reduced to 310° C. or less to prevent the staining or voiding.
Inventors
- 👤 Gregory Hindman
- 👤 Jack Berg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:12
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/564; C23C14/568; H10W20/056
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
94 words
A method of processing layers on silicon wafers in a multi-chambered wafer processing device with a central plenum comprising: forming a first layer by sputtering off a target in a nitrogen containing environment in a first chamber of the multi-chambered wafer processing device; thereafter, opening the first chamber to the central plenum; thereafter, opening a metal layer sputtering chamber of the multi-chambered wafer processing device to the central plenum; thereafter, pumping out the metal layer sputtering chamber; and thereafter, sputtering a metal layer including aluminum on a wafer in said metal layer sputtering chamber.
Claim 2
Independent Claim
94 words
A method of processing layers on silicon wafers in a multi-chambered wafer processing device with a central plenum comprising: forming a first layer by sputtering off a target in a nitrogen containing environment in a first chamber of the multi-chambered wafer processing device; thereafter, opening the first chamber to the central plenum; thereafter, opening a metal layer sputtering chamber of the multi-chambered wafer processing device to the central plenum; thereafter, pumping out the metal layer sputtering chamber; and thereafter, sputtering a metal layer including aluminum on a wafer in said metal layer sputtering chamber.
Claim 3
Dependent Claim
32 words
The method of claim 1, wherein the first layer forming step comprises forming a titanium nitride layer by sputtering off the target in the nitrogen containing environment in the first sputter chamber.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein said metal layer sputtering step is done at temperatures less than 350° C.
Claim 5
Dependent Claim
19 words
The method of claim 2, wherein said metal layer sputtering step is done at temperatures less than 310° C.
Claim 6
Dependent Claim
39 words
The method of claim 1, wherein said metal layer sputtering chamber pumping-out step includes inputting gases used for the metal layer sputtering step into the metal layer sputtering chamber while pumping out gases from the metal layer sputtering chamber.
Claim 7
Dependent Claim
20 words
The method of claim 5, wherein the metal layer sputtering chamber pumping-out step is done for ten seconds or more.
Claim 8
Independent Claim
96 words
A method for forming a metal layer including aluminum on silicon wafers in a multi-chambered wafer processing device with a central plenum comprising: forming a first layer by sputtering off a target in a nitrogen containing environment in a first chamber of the multi-chambered wafer processing device; thereafter, opening the first chamber to the central plenum; opening a metal layer sputtering chamber of the multi-chambered wafer processing device to the central plenum; and thereafter, sputtering a metal layer including aluminum on said wafer in said metal layer sputtering chamber at temperatures of 310° C. or less.
Claim 9
Independent Claim
96 words
A method for forming a metal layer including aluminum on silicon wafers in a multi-chambered wafer processing device with a central plenum comprising: forming a first layer by sputtering off a target in a nitrogen containing environment in a first chamber of the multi-chambered wafer processing device; thereafter, opening the first chamber to the central plenum; opening a metal layer sputtering chamber of the multi-chambered wafer processing device to the central plenum; and thereafter, sputtering a metal layer including aluminum on said wafer in said metal layer sputtering chamber at temperatures of 310° C. or less.
Claim 10
Dependent Claim
32 words
The method of claim 7, wherein the first layer forming step comprises forming a titanium nitride layer by sputtering off the target in the nitrogen containing environment in the first sputter chamber.
Claim 11
Independent Claim
100 words
A method of processing layers on silicon wafers in a multi-chambered wafer processing device with a central plenum comprising: forming a first layer by sputtering off a target in a nitrogen containing environment in a first chamber of the multi-chambered wafer processing device; thereafter, pumping out the first chamber; thereafter, opening the first chamber to the central plenum; thereafter, opening a metal layer sputtering chamber of the multi-chambered wafer processing device to the central plenum; thereafter, pumping out the metal layer sputtering chamber; and thereafter, sputtering a metal layer including aluminum on a wafer in said metal layer sputtering chamber.
Claim 12
Independent Claim
100 words
A method of processing layers on silicon wafers in a multi-chambered wafer processing device with a central plenum comprising: forming a first layer by sputtering off a target in a nitrogen containing environment in a first chamber of the multi-chambered wafer processing device; thereafter, pumping out the first chamber; thereafter, opening the first chamber to the central plenum; thereafter, opening a metal layer sputtering chamber of the multi-chambered wafer processing device to the central plenum; thereafter, pumping out the metal layer sputtering chamber; and thereafter, sputtering a metal layer including aluminum on a wafer in said metal layer sputtering chamber.
Claim 13
Dependent Claim
32 words
The method of claim 9, wherein the first layer forming step comprises forming a titanium nitride layer by sputtering off the target in the nitrogen containing environment in the first sputter chamber.
Claim 14
Dependent Claim
19 words
The method of claim 9, wherein said metal layer sputtering step is done at temperatures less than 350° C.
Claim 15
Dependent Claim
19 words
The method of claim 10, wherein said metal layer sputtering step is done at temperatures less than 310° C.
Claim 16
Dependent Claim
39 words
The method of claim 9, wherein said metal layer sputtering chamber pumping-out step includes inputting gases used for the metal layer sputtering step into the metal layer sputtering chamber while pumping out gases from the metal layer sputtering chamber.
Claim 17
Dependent Claim
20 words
The method of claim 13, wherein the metal layer sputtering chamber pumping-out step is done for ten seconds or more.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |