Static semiconductor memory device

Claim 2

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells comprising: (a) a first inverter composed of a first drive MOSFET and a first load element; (b) a second inverter composed of a second drive MOSFET and a second load element; (c) first and second transfer MOSFETs; (d) a first resistive element connected between said first transfer MOSFET and a second node; and (e) a second resistive element connected between said second transfer MOSFET and a first node, said first drive MOSFET having a gate connected to said second load element at the first node, said first node being further connected to said second drive MOSFET, said second drive MOSFET having a gate connected to said first load element at the second node, and said second node being further connected to said first drive MOSFET, wherein said first transfer MOSFET is connected to a first bit line and said second transfer MOSFET is connected to a second bit line, said first and second drive MOSFETs are connected in common to a reference potential point, and the following two equations are satisfied: R 1 >R 2 ; and R 3 >R 4 , where R 1 is the resistance between said second node and said first bit line, and comprises the resistance of said first transfer MOSFET and the resistance of said first resistive element, R 2 is the resistance between said second node and said reference potential point, and comprises the resistance of said first drive MOSFET, R 3 is the resistance between said first node and said second bit line, and comprises the resistance of said second transfer MOSFET and the resistance of said second resistive element, and R 4 is the resistance between said first node and said reference potential point, and comprises the resistance of said second drive MOSFET.

Claim 3

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells comprising: (a) a first inverter composed of a first drive MOSFET and a first load element; (b) a second inverter composed of a second drive MOSFET and a second load element; (c) first and second transfer MOSFETs; (d) a first resistive element connected between said first transfer MOSFET and a second node; and (e) a second resistive element connected between said second transfer MOSFET and a first node, said first drive MOSFET having a gate connected to said second load element at the first node, said first node being further connected to said second drive MOSFET, said second drive MOSFET having a gate connected to said first load element at the second node, and said second node being further connected to said first drive MOSFET, wherein the first resistive element comprises a first impurity region formed in said semiconductor substrate, said first impurity region further serves as one of source and drain regions of said first transfer MOSFET and has an impurity concentration lower than the impurity concentration of the drain region of said first drive MOSFET, said second resistive element comprises a second impurity region formed in said semiconductor substrate, and said second impurity region further serves as one of source and drain regions of said second transfer MOSFET and has an impurity concentration lower than the impurity concentration of the drain region of said second drive MOSFET.

Claim 4

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells comprising: (a) a first inverter composed of a first drive MOSFET and a first load element; (b) a second inverter composed of a second drive MOSFET and a second load element; (c) first and second transfer MOSFETs; (d) a first resistive element connected between said first transfer MOSFET and a second node; and (e) a second resistive element connected between said second transfer MOSFET and a first node, said first drive MOSFET having a gate connected to said second load element at the first node, said first node being further connected to said second drive MOSFET, said second drive MOSFET having a gate connected to said first load element at the second node, and said second node being further connected to said first drive MOSFET, wherein the first resistive element comprises a first impurity region formed in said semiconductor substrate, said first impurity region further serves as one of source and drain regions of said first transfer MOSFET and has an impurity concentration lower than the impurity concentration of the drain region of said first drive MOSFET, said second resistive element comprises a second impurity region formed in said semiconductor substrate, and said second impurity region further serves as one of source and drain regions of said second transfer MOSFET and has an impurity concentration lower than the impurity concentration of the drain region of said second drive MOSFET.

Claim 5

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells comprising: a first drive MOSFET and a first load element connected in series between first and second power supply lines; a second drive MOSFET and a second load element connected in series between said first and second power supply lines; a first transfer MOSFET connected between a first bit line and a first connection point of said first drive MOSFET and said first load element; and a second transfer MOSFET connected between a second bit line and a second connection point of said second MOSFET and said second load element, each of said first and second drive MOSFETs including a first lightly doped region having a first end portion defining a channel region thereof, and a first heavily doped region formed in contact with said first lightly doped region, each of said first and second transfer MOSFETs including a second lightly doped region having a second end portion defining a channel region thereof, and a second heavily doped region formed in contact with said second lightly doped region, such that the distance between said second end portion and said second heavily doped region is larger than the distance between said first lightly doped region and said first heavily doped region, whereby a resistance is provided between each of said first and second transfer MOSFETs and an associated one of the first and second connection points.

Claim 6

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells comprising: a first drive MOSFET and a first load element connected in series between first and second power supply lines; a second drive MOSFET and a second load element connected in series between said first and second power supply lines; a first transfer MOSFET connected between a first bit line and a first connection point of said first drive MOSFET and said first load element; and a second transfer MOSFET connected between a second bit line and a second connection point of said second MOSFET and said second load element, each of said first and second drive MOSFETs including a first lightly doped region having a first end portion defining a channel region thereof, and a first heavily doped region formed in contact with said first lightly doped region, each of said first and second transfer MOSFETs including a second lightly doped region having a second end portion defining a channel region thereof, and a second heavily doped region formed in contact with said second lightly doped region, such that the distance between said second end portion and said second heavily doped region is larger than the distance between said first lightly doped region and said first heavily doped region, whereby a resistance is provided between each of said first and second transfer MOSFETs and an associated one of the first and second connection points.

Claim 7

The memory device as claimed in claim 3, wherein said first load element comprises a first thin film transistor and a second load element comprises a second thin film transistor.

Claim 8

The memory device as claimed in claim 4, wherein said first thin film transistor has a gate which further serves as a gate of said second drive MOSFET, and said second thin film transistor has a gate which further serves as a gate of said first drive MOSFET.

Claim 9

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells including: a flip-flop having first and second input/output nodes; a first transfer MOSFET connected between said first input/output node and a first bit line; and a second transfer MOSFET connected between said second input/output node and a second bit line, said first transfer MOSFET including a first region having a first end portion and a second region having a second end portion, said second transfer MOSFET including a third region having a third end portion and a fourth region having a fourth end portion, said first and second end portions defining a first channel region of said first transfer MOSFET, said third and fourth end portions defining a second channel region of said second transfer MOSFET, said first region further having a first contact portion which is in contact with said first bit line, said second region further having a second contact portion which is electrically connected with said first input/output node, said third region further having a third contact portion which is in contact with said second bit line, and said fourth region further having a fourth contact portion which is electrically connected to said second input/output node, such that the distance between said first end portion of said first region and said first contact portion of said first region is smaller than the distance between said second end portion of said second region and said second contact portion of said second region, and such that the distance between said third end portion of said third region and said third contact portion of said third region is smaller than the distance between said fourth end portion of said fourth region and said fourth contact portion of said fourth region.

Claim 10

A semiconductor memory device having a plurality of memory cells formed in a semiconductor substrate, each of said memory cells including: a flip-flop having first and second input/output nodes; a first transfer MOSFET connected between said first input/output node and a first bit line; and a second transfer MOSFET connected between said second input/output node and a second bit line, said first transfer MOSFET including a first region having a first end portion and a second region having a second end portion, said second transfer MOSFET including a third region having a third end portion and a fourth region having a fourth end portion, said first and second end portions defining a first channel region of said first transfer MOSFET, said third and fourth end portions defining a second channel region of said second transfer MOSFET, said first region further having a first contact portion which is in contact with said first bit line, said second region further having a second contact portion which is electrically connected with said first input/output node, said third region further having a third contact portion which is in contact with said second bit line, and said fourth region further having a fourth contact portion which is electrically connected to said second input/output node, such that the distance between said first end portion of said first region and said first contact portion of said first region is smaller than the distance between said second end portion of said second region and said second contact portion of said second region, and such that the distance between said third end portion of said third region and said third contact portion of said third region is smaller than the distance between said fourth end portion of said fourth region and said fourth contact portion of said fourth region.

Claim 11

The memory device as claimed in claim 6, wherein said second contact portion has an impurity concentration higher than an impurity concentration of a first remaining portion of said second region, and said fourth contact portion has an impurity concentration higher than an impurity concentration of a second remaining portion of said fourth region.

Claim 12

The memory device as claimed in claim 7, wherein said first remaining portion serves as a first resistive element connected between said first transfer MOSFET and said first input/output node, and said second remaining portion serves as a second resistive element connected between said second transfer MOSFET and said second input/output node.

Claim 13

The memory device as claimed in claim 7, wherein said first and third regions are covered by insulating film, said first contact portion is defined by a first contact hole formed in said insulating film, said third contact portion is defined by a second contact hole formed in said insulating film, said first bit line is connected to said first contact portion through said first contact hole, and said second bit line is connected to said third contact hole through said second contact hole.