US5335237A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Parasitic oscillation suppression in solid state lasers using absorbing thin films
Assignee: United States Department of Energy
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Filing: 1992-10-29
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Granted: 1994-08-02
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Expires: 2012-10-29
Abstract
Abstract A thin absorbing film is bonded onto at least certain surfaces of a solid state laser gain medium. An absorbing metal-dielectric multilayer film is optimized for a broad range of incidence angles, and is resistant to the corrosive/erosive effects of a coolant such as water, used in the forced convection cooling of the film. Parasitic oscillations hamper the operation of solid state lasers by causing the decay of stored energy to amplified rays trapped within the gain medium by total and partial internal reflections off the gain medium facets. Zigzag lasers intended for high average power operation require the ASE absorber.
Inventors
- 👤 Luis E. Zapata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:57
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/05; H01S3/06; H01S3/0602; H01S3/0606; H01S2301/00; H01S2301/02; H01S3/02; H01S3/04; H01S3/0405; H01S3/0407; H01S3/042; H01S3/0619; H01S3/0625; H01S3/08; H01S3/08095; H01S3/14; H01S3/16; H01S3/1601; H01S3/1603; H01S3/1611; H01S3/163; H01S3/164
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
72 words
A material comprising: (a) a solid state laser gain medium; and (b) an absorbing thin film bonded to at least certain surfaces of said gain medium wherein the index of refraction of said thin film is greater than or equal to the index of refraction of said gain medium and wherein said thin film is selected from a group consisting of germanium, silica, dried graphite ink, semiconductor material, a halide and dysprosium.
Claim 2
Dependent Claim
72 words
A material comprising: (a) a solid state laser gain medium; and (b) an absorbing thin film bonded to at least certain surfaces of said gain medium wherein the index of refraction of said thin film is greater than or equal to the index of refraction of said gain medium and wherein said thin film is selected from a group consisting of germanium, silica, dried graphite ink, semiconductor material, a halide and dysprosium.
Claim 3
Dependent Claim
19 words
A material as recited in claim 1, wherein said gain medium is designed to operate at high average power.
Claim 4
Dependent Claim
19 words
A material as recited in claim 1, wherein said film is resistant to the corrosive effects of a coolant.
Claim 5
Dependent Claim
29 words
A material as recited in claim 3, wherein said film has an absorption coefficient that is low enough to prevent reflection of the amplified stimulated emission and parasitic lasing.
Claim 6
Dependent Claim
35 words
A material as recited in claim 4, wherein said film is cooled by a cooling system selected from a group consisting of forced convection cooling, water, a microchannel cooling plate, and a heat pipe design.
Claim 7
Dependent Claim
17 words
A material as recited in claim 5, wherein said germanium film has a thickness of 0.4 micrometers.
Claim 8
Dependent Claim
18 words
A material as recited in claim 5, wherein said germanium film is a monolithic layer of 1.9 micrometers.
Claim 9
Dependent Claim
29 words
A material as recited in claim 5, wherein said film has a thickness of odd multiples of a 1/4 wavelength of the incident parasitic lasing and amplified stimulated emission.
Claim 10
Dependent Claim
15 words
A material as recited in claim 5, wherein said film is comprised of multiple layers.
Claim 11
Dependent Claim
33 words
A material as recited in claim 9, wherein each layer of said multiple layers have a thickness of odd multiples of a 1/4 wavelength of the incident parasitic lasing and amplified stimulated emission.
Claim 12
Dependent Claim
14 words
A material as recited in claim 10, wherein said film has alternating metal-dielectric layers.
Claim 13
Dependent Claim
19 words
A material as recited in claim 11, wherein said film is comprised of alternating layers of germanium and silica.
Claim 14
Dependent Claim
29 words
A material as recited in claim 1, wherein said semiconductor material is selected from a group consisting of lead selenide, lead sulfide, lead telluride, gallium arsenide, selenium, and tellurium.
Claim 15
Dependent Claim
28 words
A material as recited in claim 1, wherein said halide is selected from a group consisting of rubidium iodide, potassium iodide, thallium chloride, thallium bromide, and silver chloride.
Claim 16
Dependent Claim
123 words
In a laser having a solid state gain medium, the improvement comprising: an absorbing thin film bonded onto at least certain surfaces of said gain medium where a laser beam does not impinge, wherein said thin film is selected to allow transmission of light from an excitation mechanism, wherein said thin film is selected from a group consisting of germanium, silica, dried graphite ink, semiconductor material, a halide and dysprosium, wherein the index of refraction of said thin film is greater than or equal to the index of refraction of said gain medium and wherein the thin film is positioned to frustrate total internal reflection of amplified stimulated emission and parasitic lasing without substantially suppressing a laser beam propagating through the gain medium.
Claim 17
Dependent Claim
123 words
In a laser having a solid state gain medium, the improvement comprising: an absorbing thin film bonded onto at least certain surfaces of said gain medium where a laser beam does not impinge, wherein said thin film is selected to allow transmission of light from an excitation mechanism, wherein said thin film is selected from a group consisting of germanium, silica, dried graphite ink, semiconductor material, a halide and dysprosium, wherein the index of refraction of said thin film is greater than or equal to the index of refraction of said gain medium and wherein the thin film is positioned to frustrate total internal reflection of amplified stimulated emission and parasitic lasing without substantially suppressing a laser beam propagating through the gain medium.
References Cited (Backward Citations)
US3445785A
Cited
US3383622A
Cited
US3484713A
Cited
US3599114A
Cited
US3579130A
Cited
US3747021A
Cited
US3665335A
Cited
US3684980A
Cited
US3906396A
Cited
US3849738A
Cited
US4150341A
Cited
US4225826A
Cited
US4881233A
Cited
US4849036A
Cited
US4890289A
Cited
US4899347A
Cited
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