Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
111 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a dielectric substrate mounted on one surface (front) of the ground plane; a highly conducting microwave resonator formed on the opposed surface of the substrate opposite the ground plane; an electrically short feed slot formed in the ground plane and inductively coupled to the resonator; an electrical feed means operatively connected to the slot for coupling microwave power to and receiving microwave power reflected from the slot, said feed means having an input coupling factor r o in the range 0.5<r o <2.0 at the resonant frequency of the resonator.
Claim 2
Dependent Claim
111 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a dielectric substrate mounted on one surface (front) of the ground plane; a highly conducting microwave resonator formed on the opposed surface of the substrate opposite the ground plane; an electrically short feed slot formed in the ground plane and inductively coupled to the resonator; an electrical feed means operatively connected to the slot for coupling microwave power to and receiving microwave power reflected from the slot, said feed means having an input coupling factor r o in the range 0.5<r o <2.0 at the resonant frequency of the resonator.
Claim 3
Dependent Claim
28 words
The reflection sensor of claim 1 wherein the microwave resonator is a metal dipole, and the electrically short feed slot is oriented substantially perpendicular to the dipole resonator.
Claim 4
Dependent Claim
30 words
The reflection sensor of claim 1 wherein the microwave resonator is a metal loop and the axis of electrically short feed slot is oriented substantially perpendicular to the loop circumference.
Claim 5
Dependent Claim
55 words
The reflection sensor of claim 1 further comprising a swept microwave frequency source connected to the electrical feed means, means for detecting a wave which is reflected from the short feed slot, and means to determine the resonant frequency of the resonator and the sensor input coupling factor at the resonant frequency of the resonator.
Claim 6
Dependent Claim
20 words
The reflection sensor of claim 1 wherein the electrical feed means comprises a coaxial cable connected across the feed slot.
Claim 7
Dependent Claim
27 words
The reflection sensor of claim 1 wherein the electrical feed means comprises a microstrip line connected across the slot and oriented substantially perpendicular to the slot axis.
Claim 8
Dependent Claim
51 words
the reflection sensor of claim 1 wherein the electrical feed means comprises a microstrip line which extends over and across the short slot substantially perpendicular to the slot axis and is terminated in an open or short circuit so that the standing wave on the microstrip line couples to the slot.
Claim 9
Dependent Claim
12 words
The reflection sensor of claim 1 wherein the sensor is substantially flat.
Claim 10
Dependent Claim
32 words
The reflection sensor of claim 1 wherein the sensor conforms to the shape of a material to be measured or to the shape of a vessel containing the material to be measured.
Claim 11
Dependent Claim
35 words
The reflection sensor of claim 1 further comprising a metallic shield formed around the short feed slot on the back side of the ground plane to prevent radiation from the back side of the sensor.
Claim 12
Dependent Claim
46 words
The reflection sensor of claim 1 further comprising a dielectric superstrate formed on the resonator and the opposed surface of the dielectric substrate to diminish the electromagnetic coupling between the resonator and the material to be measured, and to protect the resonator from damage and wear.
Claim 13
Dependent Claim
29 words
The reflection sensor of claim 1 further comprising a plurality of additional microwave resonators formed on the opposed surface of the substrate, each resonator having a different resonant frequency.
Claim 14
Dependent Claim
15 words
The reflection sensor of claim 12 wherein the resonators are parallel dipoles of different lengths.
Claim 15
Dependent Claim
110 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a dielectric substrate mounted on one surface (front) of the ground plane; one or more highly conducting resonators formed on the opposed surface of the substrate opposite to the ground plane; single electrical feed means operatively connected to the sensor for coupling incident microwave power to and for receiving microwave power reflected from the one or more resonators such that the coupling factor r o at the sensor feed connection is within the range 0.5<r o <2.0 at one or more resonant frequencies of the one or more resonators.
Claim 16
Dependent Claim
110 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a dielectric substrate mounted on one surface (front) of the ground plane; one or more highly conducting resonators formed on the opposed surface of the substrate opposite to the ground plane; single electrical feed means operatively connected to the sensor for coupling incident microwave power to and for receiving microwave power reflected from the one or more resonators such that the coupling factor r o at the sensor feed connection is within the range 0.5<r o <2.0 at one or more resonant frequencies of the one or more resonators.
Claim 17
Dependent Claim
54 words
The reflection sensor of claim 14 further comprising a dielectric superstrate formed on the one or more resonators and the opposed surface of the dielectric substrate to diminish the electromagnetic coupling between the one or more resonators and the material being measured, and to protect the one or more resonators from damage and wear.
Claim 18
Dependent Claim
40 words
The reflection sensor of claim 14 wherein the feed means comprises an electrically short slot in the ground plane, oriented to inductively couple to the one or more resonators and electrically fed by connecting a coaxial cable across the slot.
Claim 19
Dependent Claim
81 words
The reflection sensor of claim 14 wherein the feed means comprises an electrically short slot in the ground plane, oriented to inductively couple to the one or more resonators and fed by a microstrip line which is either conductively connected across the slot or extends across and beyond the slot at essentially a right angle to the slot axis and is terminated in an open or short circuit so that a standing wave on the microstrip line couples to the slot.
Claim 20
Dependent Claim
29 words
The reflection sensor of claim 17 wherein the microstrip feed line is formed on a second dielectric substrate which is mounted on the back side of the ground plane.
Claim 21
Dependent Claim
60 words
The reflection sensor of claim 14 wherein the feed means comprises an electrically short slot in the ground plane, oriented to inductively couple to the one or more resonators and fed by a coplanar line formed in the ground plane, the coplanar line being substantially perpendicular to the slot axis and having its center conductor conductively connected across the slot.
Claim 22
Dependent Claim
52 words
The reflection sensor of claim 14 further comprising a swept microwave frequency source connected to the electrical feed means, means for detecting a wave reflected from the feed means, and means for measuring the resonant frequencies and the sensor input coupling factors at the resonant frequencies of the one or more resonators.
Claim 23
Dependent Claim
74 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a narrow resonant slot formed in the ground plane; electrical feed means operatively connected to the slot for coupling a microwave source electromagnetically to the slot such that the coupling factor r o between the source and the slot is within the range 0.5<r o <2.0 at the resonant frequency of the slot.
Claim 24
Dependent Claim
74 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a narrow resonant slot formed in the ground plane; electrical feed means operatively connected to the slot for coupling a microwave source electromagnetically to the slot such that the coupling factor r o between the source and the slot is within the range 0.5<r o <2.0 at the resonant frequency of the slot.
Claim 25
Dependent Claim
29 words
A reflection sensor of claim 21 in which the ground plane and slot are covered with a dielectric substrate on the side opposite (front) to the electrical feed means.
Claim 26
Dependent Claim
31 words
The reflection sensor of claim 21 in which the electrical feed means is a coaxial cable connected across the slot at some offset distance from the center of the slot length.
Claim 27
Dependent Claim
73 words
The reflection sensor of claim 21 in which the electrical feed means comprises a microstrip line which is either conductively connected across the slot at some offset distance from the center of the slot length, or extends some distance beyond the slot at substantially a right angle to the slot axis and is terminated in an open or short circuit so that a standing wave on the microstrip line couples to the slot.
Claim 28
Dependent Claim
53 words
The reflection sensor of claim 21 in which the electrical feed means is a coplanar transmission line formed in the ground plane, the coplanar line being oriented substantially perpendicular to the slot axis and having its center conductor connected across the slot at some offset distance from the center of the slot length.
Claim 29
Dependent Claim
52 words
The reflection sensor of claim 21 further comprising a swept microwave frequency source connected to the electrical feed means, means for detecting a wave reflected from the feed means, and means for measuring the resonant frequency of the slot and the sensor input coupling factor at the resonant frequency of the slot.
Claim 30
Independent Claim
92 words
A method for measuring the in situ dielectric and conductive properties of a material, comprising: forming a narrow resonant slot in a ground plane; coupling a microwave source electromagnetically to the slot with a coupling factor r o between the source and the slot in the range 0.5<r o <2.0 at the resonant frequency of the slot; contacting the ground plane and slot with the material; detecting a reflected wave from the slot; measuring the resonant frequency of the slot and the input coupling factor at the resonant frequency of the slot.
Claim 31
Independent Claim
92 words
A method for measuring the in situ dielectric and conductive properties of a material, comprising: forming a narrow resonant slot in a ground plane; coupling a microwave source electromagnetically to the slot with a coupling factor r o between the source and the slot in the range 0.5<r o <2.0 at the resonant frequency of the slot; contacting the ground plane and slot with the material; detecting a reflected wave from the slot; measuring the resonant frequency of the slot and the input coupling factor at the resonant frequency of the slot.
Claim 32
Independent Claim
97 words
A method for measuring the in situ dielectric and conductive properties of a material, comprising: forming a highly conducting microwave resonator on a dielectric substrate mounted on a metal ground plane; coupling a microwave source electromagnetically to the resonator with a coupling factor between the source and the resonator in the range 0.5<r o <2.0 at the resonant frequency of the resonator; contacting the dielectric substrate and resonator with the material; detecting a reflected wave from the resonator; measuring the resonant frequency of the resonator and the input coupling factor at the resonant frequency of the resonator.
Claim 33
Independent Claim
97 words
A method for measuring the in situ dielectric and conductive properties of a material, comprising: forming a highly conducting microwave resonator on a dielectric substrate mounted on a metal ground plane; coupling a microwave source electromagnetically to the resonator with a coupling factor between the source and the resonator in the range 0.5<r o <2.0 at the resonant frequency of the resonator; contacting the dielectric substrate and resonator with the material; detecting a reflected wave from the resonator; measuring the resonant frequency of the resonator and the input coupling factor at the resonant frequency of the resonator.
Claim 34
Dependent Claim
122 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a dielectric substrate mounted on one surface (front) of the ground plane; one or more highly conducting parallel dipole resonators formed on the opposed surface of the substrate opposite to the ground plane; an electrically short slot formed in the ground plane, said slot being inductively coupled and oriented substantially perpendicular to all of the one or more parallel dipole resonators; a coaxial cable connected across the slot to feed the slot with an input coupling factor r o in the range 0.5<r o <2.0 at one or more of the resonant frequencies of any of the one or more resonators.
Claim 35
Dependent Claim
122 words
A microwave reflection sensor for measuring the in situ dielectric and conductive properties of a material, comprising: a metal ground plane; a dielectric substrate mounted on one surface (front) of the ground plane; one or more highly conducting parallel dipole resonators formed on the opposed surface of the substrate opposite to the ground plane; an electrically short slot formed in the ground plane, said slot being inductively coupled and oriented substantially perpendicular to all of the one or more parallel dipole resonators; a coaxial cable connected across the slot to feed the slot with an input coupling factor r o in the range 0.5<r o <2.0 at one or more of the resonant frequencies of any of the one or more resonators.