US5332915A
Expired / Lapsed
US
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Semiconductor memory apparatus
Assignee: Rohm Co Ltd
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Filing: 1992-10-21
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Granted: 1994-07-26
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Expires: 2012-10-21
Abstract
Abstract A high dielectric film instead of an oxidizing film conventionally used is used in the non-volatile memory of an MoNoS construction. Using a mixed film composed of a high dielectric constant film and an amorphous insulating film for the trap film, the ratio of the voltage applied to the tunnel oxidizing film is increased so that writing and erasing operations can be effected with a low voltage. Penetration of the electrons into the electrode and the flow of positive holes from the electrode are prevented so as to increase the flow efficiency.
Inventors
- 👤 Noriyuki Shimoji
- 👤 Takanori Ozawa
- 👤 Hironobu Nakao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:36
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D30/00; H10D30/60; H10D30/69; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
63 words
A semiconductor memory apparatus comprising a tunnel oxidizing film formed on a Si substrate, a mixed film composed of a high dielectric constant insulating film and an amorphous insulating film formed on the tunnel oxidizing film, a metallic film formed on the mixed film, a high dielectric film formed on the metallic film, and a gate electrode formed on the high dielectric film.
Claim 2
Dependent Claim
63 words
A semiconductor memory apparatus comprising a tunnel oxidizing film formed on a Si substrate, a mixed film composed of a high dielectric constant insulating film and an amorphous insulating film formed on the tunnel oxidizing film, a metallic film formed on the mixed film, a high dielectric film formed on the metallic film, and a gate electrode formed on the high dielectric film.
Claim 3
Dependent Claim
44 words
The semiconductor memory apparatus as defined in claim 1, wherein the high dielectric film has a band gap which prevents the penetration of electrons into the electrode and the flow of positive holes from the electrode, thereby increasing the flow efficiency of the electrons.
Claim 4
Dependent Claim
27 words
The semiconductor memory apparatus as defined in claim 1, wherein the high dielectric film is a film having a dielectric constant of Al 2 O 3 .
References Cited (Backward Citations)
US3731163A
Cited
US4360900A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-25 | 1998-01-24 | 1998-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-25 | 2002-01-24 | 2002-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-25 | 2006-01-24 | 2006-07-26 | $7700.00 | Window Closed / Lapsed |