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US5328520A Expired / Lapsed US ⏱️ 0.0 years remaining

Solar cell with low resistance linear electrode

Assignee: Mitsubishi Electric Corp
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Filing: 1992-09-22
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Granted: 1994-07-12
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Expires: 2012-09-22
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Abstract

Abstract A method for producing a linear pattern having a width less than 100 microns and a resistivity of the order of 10 -6 Ω·cm on a substrate includes maintaining a low melting point metal in its fused state, applying the fused metal to a tip of a drawing head disposed close to or contacting a substrate by capillary action, applying the fused metal to the substrate in a line with a width less than 100 microns while moving the tip of the drawing head relative to the substrate, and cooling and solidifying the linear pattern of fused metal. Therefore, a linear pattern having a width less than 100 microns and a resistivity of the order of 10 -6 Ω·cm is directly formed on the substrate in a simple process with high efficiency and the production yield is significantly improved.

Inventors

  • 👤 Takushi Itagaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 22:58
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/10; H05K3/12; H05K3/1241; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10P; H10P14/00; H10P14/40; H10P14/46; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 84 words
A solar cell comprising: an active layer comprising one of microcrystalline silicon and amorphous silicon and including at least a p type layer and an n type layer; and electrodes for extracting current generated in said active layer, wherein one of said electrodes is disposed on said active layer and comprises a linear metallic pattern having a width less than 100 microns and comprising a metallic material having a melting point below 200° C. and a resistivity of the order of 10 -6 Ω·cm.
Claim 2
Dependent Claim 84 words
A solar cell comprising: an active layer comprising one of microcrystalline silicon and amorphous silicon and including at least a p type layer and an n type layer; and electrodes for extracting current generated in said active layer, wherein one of said electrodes is disposed on said active layer and comprises a linear metallic pattern having a width less than 100 microns and comprising a metallic material having a melting point below 200° C. and a resistivity of the order of 10 -6 Ω·cm.
Claim 3
Dependent Claim 41 words
The solar cell of claim 1 wherein said linear metallic pattern is formed by applying the metallic material in a fused state to said active layer in a line narrower than 100 microns and then cooling and solidifying said metallic material.
Claim 4
Dependent Claim 23 words
The solar cell of claim 1 wherein said metallic material is selected from the group consisting of In, In-Sn alloy, and In-Pb alloy.
Claim 5
Dependent Claim 26 words
The solar cell of claim 1 wherein said metallic material includes metal particles having a higher melting point and a lower resistivity than said metallic material.
Claim 6
Dependent Claim 111 words
A solar cell comprising: a active layer comprising at least a p-type layer and an n-type layer; and electrodes for extracting current generated in said active layer wherein one of said electrodes is disposed on said active layer and comprises a first linear pattern disposed on the active layer and a second linear pattern disposed on the active layer and intersecting the first linear pattern, the first and second linear patterns each comprising a metallic material selected from the group consisting of In-Sn alloy, In-Pb alloy, and In wherein said metallic material of the second linear pattern has a lower melting point than the metallic material of the first linear pattern.
Claim 7
Dependent Claim 111 words
A solar cell comprising: a active layer comprising at least a p-type layer and an n-type layer; and electrodes for extracting current generated in said active layer wherein one of said electrodes is disposed on said active layer and comprises a first linear pattern disposed on the active layer and a second linear pattern disposed on the active layer and intersecting the first linear pattern, the first and second linear patterns each comprising a metallic material selected from the group consisting of In-Sn alloy, In-Pb alloy, and In wherein said metallic material of the second linear pattern has a lower melting point than the metallic material of the first linear pattern.
Claim 8
Dependent Claim 28 words
The solar cell of claim 5 wherein the first linear pattern has a width less than 100 microns and a resistivity on the order of 10 -6 Ω·cm.

References Cited (Backward Citations)

US4320250A Cited
US4511600A Cited
US4694115A Cited
JPS6439078A Cited
JPS6439076A Cited
US5151377A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-07-11 1998-01-10 1998-07-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-07-11 2002-01-10 2002-07-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-07-11 2006-01-10 2006-07-12 $7700.00 Window Closed / Lapsed

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