US5326715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a field oxide film of a semiconductor device
Assignee: SK Hynix Inc
•
Filing: 1993-10-13
•
Granted: 1994-07-05
•
Expires: 2013-10-13
Abstract
Abstract A method for forming a field oxide film of a semiconductor device capable of minimizing the size of bird's beak and avoiding an occurrence of crystal defect at a semiconductor substrate. The methods comprises the steps of forming a first oxide film, a first polysilicon film and a nitride film, over a semiconductor substrate, and etching predetermined portions of the nitride film and the first polysilicon film to form a field oxide region, forming a first field oxide film in the field oxide region, etching the first field oxide film to form a round recess on the semiconductor substrate, and forming a second oxide film over the round recess of the semiconductor substrate, depositing a second polysilicon film over the resulting structure, and etching the second polysilicon film without using any mask to form polysilicon film spacers at side walls of the first oxide film, first polysilicon film, and nitride film forming the field oxide region, and growing a second field oxide film over the field oxide region, etching the nitride film and the first polysilicon film, etching the first oxide film and an upper portion of the second field oxide film, and smoothing the entire exposed surface of the resulting structure to form a third field oxide film.
Inventors
- 👤 Se A. Jang
- 👤 Kyung M. Lee
- 👤 Chung S. Han
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:38
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; G03F7/26; H10P50/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
208 words
A method for forming a field oxide film of a semiconductor device, comprising the steps of: forming a first oxide film, a first polysilicon film and a nitride film, in this order, over a semiconductor substrate, and sequentially etching respective predetermined portions of said nitride film and said first polysilicon film to form a field oxide region; forming a first field oxide film in said field oxide region, etching said first field oxide film to form a round recess on said semiconductor substrate, and forming a second oxide film having a small thickness over said round recess of the semiconductor substrate; depositing a second polysilicon film over the entire exposed surface of the resulting structure including the field oxide region, and etching said second polysilicon film without using any mask to form polysilicon film spacers respectively at side walls of said first oxide film, first polysilicon film, and nitride film forming the field oxide region; and growing a second field oxide film over the field oxide region, etching the nitride film and the first polysilicon film, etching the first oxide film and an upper portion of said second field oxide film, and smoothing the entire exposed surface of the resulting structure to form a third field oxide film.
Claim 2
Independent Claim
208 words
A method for forming a field oxide film of a semiconductor device, comprising the steps of: forming a first oxide film, a first polysilicon film and a nitride film, in this order, over a semiconductor substrate, and sequentially etching respective predetermined portions of said nitride film and said first polysilicon film to form a field oxide region; forming a first field oxide film in said field oxide region, etching said first field oxide film to form a round recess on said semiconductor substrate, and forming a second oxide film having a small thickness over said round recess of the semiconductor substrate; depositing a second polysilicon film over the entire exposed surface of the resulting structure including the field oxide region, and etching said second polysilicon film without using any mask to form polysilicon film spacers respectively at side walls of said first oxide film, first polysilicon film, and nitride film forming the field oxide region; and growing a second field oxide film over the field oxide region, etching the nitride film and the first polysilicon film, etching the first oxide film and an upper portion of said second field oxide film, and smoothing the entire exposed surface of the resulting structure to form a third field oxide film.
Claim 3
Dependent Claim
27 words
A method in accordance with claim 1, wherein said first oxide film is formed by oxidizing said semiconductor substrate or depositing an oxide over said semiconductor substrate.
Claim 4
Dependent Claim
21 words
A method in accordance with claim 1, wherein said first field oxide film has a thickness of 1,000 to 2,000 Å.
Claim 5
Dependent Claim
31 words
A method in accordance with claim 1, wherein each of said polysilicon film spacers has a height to extend to an interface between said first polysilicon film and said nitride film.
Claim 6
Independent Claim
184 words
A method for forming a field oxide film of a semiconductor device, comprising the steps of: forming a first oxide film and a nitride film, in this order, over a semiconductor substrate, etching a predetermined portion of said nitride film to form a field oxide region, and forming a first field oxide film in said field oxide region; etching said first field oxide film to form a round recess on said semiconductor substrate, forming a second oxide film having a small thickness over said round recess of the semiconductor substrate, depositing a second polysilicon film over the entire exposed surface of the resulting structure, and etching said second polysilicon film without using any mask to form polysilicon film spacers respectively at side walls of said first oxide film and nitride film forming the field oxide region; and forming a second field oxide film over the field oxide region, etching the nitride film and the first oxide film, etching an upper portion of said second field oxide film, and smoothing the entire exposed surface of the resulting structure to form a third field oxide film.
Claim 7
Independent Claim
184 words
A method for forming a field oxide film of a semiconductor device, comprising the steps of: forming a first oxide film and a nitride film, in this order, over a semiconductor substrate, etching a predetermined portion of said nitride film to form a field oxide region, and forming a first field oxide film in said field oxide region; etching said first field oxide film to form a round recess on said semiconductor substrate, forming a second oxide film having a small thickness over said round recess of the semiconductor substrate, depositing a second polysilicon film over the entire exposed surface of the resulting structure, and etching said second polysilicon film without using any mask to form polysilicon film spacers respectively at side walls of said first oxide film and nitride film forming the field oxide region; and forming a second field oxide film over the field oxide region, etching the nitride film and the first oxide film, etching an upper portion of said second field oxide film, and smoothing the entire exposed surface of the resulting structure to form a third field oxide film.
Claim 8
Dependent Claim
27 words
A method in accordance with claim 5, wherein said first oxide film is formed by oxidizing said semiconductor substrate or depositing an oxide over said semiconductor substrate.
References Cited (Backward Citations)
US4372033A
Cited
US4533429A
Cited
US4508757A
Cited
US4986879A
Cited
US5173843A
Cited
US5173444A
Cited
US5246537A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-04 | 1998-01-03 | 1998-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-04 | 2002-01-03 | 2002-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-04 | 2006-01-03 | 2006-07-05 | $7700.00 | Window Closed / Lapsed |