US5325000A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Frequency mixing circuit with impedance transforming power combiner
Assignee: NXP USA Inc
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Filing: 1993-04-30
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Granted: 1994-06-28
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Expires: 2013-04-30
Abstract
Abstract A frequency mixer circuit uses an impedance transforming power combiner to sum the power levels of RF and LO input signals and drive an output field effect transistor (FET). The nonlinear transconductance in the FET creates the sum and difference mixing products for providing an IF output signal operating at a frequency equal to the difference between the frequencies of the RF and LO input signals. The power combiner is impedance matched to the gate of the FET in order to minimize reflections back into the power combiner. The impedance transforming power combiner reduces component count and associated physical space requirements of the frequency mixing circuit.
Inventors
- 👤 Joel D. Birkeland
- 👤 Vijay K. Nair
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:54
CPC Classifications
H; H03; H03D; H03D7/00; H03D7/12; H03D7/125
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
131 words
A frequency mixing circuit, comprising: a first inductor coupled between first and second input terminals at which is applied an RF input signal and a LO input signal respectively; a first resistor coupled between said first and second input terminals; a first capacitor coupled between said first and second input terminals; a second capacitor coupled between said first input terminal and a first node; a third capacitor coupled between said second input terminal and said first node; a second inductor coupled between said first node and a first power supply conductor; and a transistor having a gate, a drain and a source, said gate being coupled to said first node, said source being coupled to said first power supply conductor, said drain providing an output signal of the frequency mixing circuit.
Claim 2
Dependent Claim
131 words
A frequency mixing circuit, comprising: a first inductor coupled between first and second input terminals at which is applied an RF input signal and a LO input signal respectively; a first resistor coupled between said first and second input terminals; a first capacitor coupled between said first and second input terminals; a second capacitor coupled between said first input terminal and a first node; a third capacitor coupled between said second input terminal and said first node; a second inductor coupled between said first node and a first power supply conductor; and a transistor having a gate, a drain and a source, said gate being coupled to said first node, said source being coupled to said first power supply conductor, said drain providing an output signal of the frequency mixing circuit.
Claim 3
Dependent Claim
15 words
The frequency mixing circuit of claim 1 wherein said transistor is a field effect transistor.
Claim 4
Dependent Claim
25 words
The frequency mixing circuit of claim 1 further including a second resistor coupled between said source of said transistor and said first power supply conductor.
Claim 5
Dependent Claim
25 words
The frequency mixing circuit of claim 3 further including a fourth capacitor coupled between said source of said transistor and said first power supply conductor.
Claim 6
Dependent Claim
25 words
The frequency mixing circuit of claim 4 further including a fifth capacitor coupled between said drain of said transistor and said first power supply conductor.
Claim 7
Dependent Claim
156 words
A frequency mixing circuit, comprising: a power combiner having first and second input terminals for receiving an RF input signal and a LO input signal respectively, said power combiner including, (a) a first inductor coupled between said first and second input terminals, (b) a first resistor coupled between said first and second input terminals, (c) a first capacitor coupled between said first and second input terminals, (d) a second capacitor coupled between said first input terminal and an output of said power combiner a first node, (e) a third capacitor coupled between said second input terminal and said first node, and (f) a second inductor coupled between said first node and a first power supply conductor; and a transistor having a gate, a drain and a source, said gate being coupled to said first node, said source being coupled to said first power supply conductor, said drain providing an output signal of the frequency mixing circuit.
Claim 8
Dependent Claim
156 words
A frequency mixing circuit, comprising: a power combiner having first and second input terminals for receiving an RF input signal and a LO input signal respectively, said power combiner including, (a) a first inductor coupled between said first and second input terminals, (b) a first resistor coupled between said first and second input terminals, (c) a first capacitor coupled between said first and second input terminals, (d) a second capacitor coupled between said first input terminal and an output of said power combiner a first node, (e) a third capacitor coupled between said second input terminal and said first node, and (f) a second inductor coupled between said first node and a first power supply conductor; and a transistor having a gate, a drain and a source, said gate being coupled to said first node, said source being coupled to said first power supply conductor, said drain providing an output signal of the frequency mixing circuit.
Claim 9
Dependent Claim
15 words
The frequency mixing circuit of claim 6 wherein said transistor is a field effect transistor.
Claim 10
Dependent Claim
25 words
The frequency mixing circuit of claim 7 further including a second resistor coupled between said source of said transistor and said first power supply conductor.
Claim 11
Dependent Claim
25 words
The frequency mixing circuit of claim 8 further including a fourth capacitor coupled between said source of said transistor and said first power supply conductor.
Claim 12
Dependent Claim
25 words
The frequency mixing circuit of claim 9 further including a fifth capacitor coupled between said drain of said transistor and said first power supply conductor.
Claim 13
Dependent Claim
132 words
An integrated frequency mixing circuit, comprising: a first inductor coupled between first and second input terminals at which is applied an Rf input signal and a LO input signal respectively; a first resistor coupled between said first and second input terminals; a first capacitor coupled between said first and second input terminals; a second capacitor coupled between said first input terminal and a first node; a third capacitor coupled between said second input terminal and said first node; a second inductor coupled between said first node and a first power supply conductor; and a transistor having a gate, a drain and a source, said gate being coupled to said first node, said source being coupled to said first power supply conductor, said drain providing an output signal of the frequency mixing circuit.
Claim 14
Dependent Claim
132 words
An integrated frequency mixing circuit, comprising: a first inductor coupled between first and second input terminals at which is applied an Rf input signal and a LO input signal respectively; a first resistor coupled between said first and second input terminals; a first capacitor coupled between said first and second input terminals; a second capacitor coupled between said first input terminal and a first node; a third capacitor coupled between said second input terminal and said first node; a second inductor coupled between said first node and a first power supply conductor; and a transistor having a gate, a drain and a source, said gate being coupled to said first node, said source being coupled to said first power supply conductor, said drain providing an output signal of the frequency mixing circuit.
Claim 15
Dependent Claim
15 words
The frequency mixing circuit of claim 11 wherein said transistor is a field effect transistor.
Claim 16
Dependent Claim
25 words
The frequency mixing circuit of claim 11 further including a second resistor coupled between said source of said transistor and said first power supply conductor.
Claim 17
Dependent Claim
25 words
The frequency mixing circuit of claim 13 further including a fourth capacitor coupled between said source of said transistor and said first power supply conductor.
Claim 18
Dependent Claim
25 words
The frequency mixing circuit of claim 14 further including a fifth capacitor coupled between said drain of said transistor and said first power supply conductor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |