US5324360A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing non-monocrystalline semiconductor device and apparatus therefor
Assignee: Canon Inc
•
Filing: 1992-05-20
•
Granted: 1994-06-28
•
Expires: 2012-05-20
Abstract
Abstract An apparatus for producing a non-monocrystalline semiconductor device having two film forming chambers. The apparatus has means for transferring a substrate from one film forming chamber to the other film forming chamber while maintaining the first film forming chamber in a plasma atmosphere.
Inventors
- 👤 Kiraku Kozuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; C23C16/54; Y; Y10; Y10S; Y10S438/00; Y10S438/907; Y10S438/908
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
92 words
An apparatus for producing a non-monocrystalline semiconductor device, including at least two film forming chambers adapted for forming non-monocrystalline semiconductor films on a substrate and being independent in vacuum conditions, comprising: means for transferring said substrate, said substrate having a length than either of said film forming chambers, subjected to formation of said non-monocrystalline semiconductor film in one of said film forming chambers to the other film forming chamber while maintaining said substrate in a plasma atmosphere, and wherein all the paths of transportation of the substrate are in a plasma atmosphere.
Claim 2
Independent Claim
92 words
An apparatus for producing a non-monocrystalline semiconductor device, including at least two film forming chambers adapted for forming non-monocrystalline semiconductor films on a substrate and being independent in vacuum conditions, comprising: means for transferring said substrate, said substrate having a length than either of said film forming chambers, subjected to formation of said non-monocrystalline semiconductor film in one of said film forming chambers to the other film forming chamber while maintaining said substrate in a plasma atmosphere, and wherein all the paths of transportation of the substrate are in a plasma atmosphere.
Claim 3
Dependent Claim
79 words
An apparatus according to claim 1, wherein each of said film forming chambers includes therein a high frequency electrode connected to a high frequency source and a shield member provided around said high frequency electrode; wherein the length of said high frequency electrode is approximately equal to the length of said substrate in the advancing direction thereof; and said apparatus further comprises a switch for connecting each of said shield members either to ground or to high frequency source.
Claim 4
Dependent Claim
35 words
An apparatus according to claim 2, further comprising: an induction-coupled plasma container in which said substrate is to be set; and a transfer tunnel provided between said film forming chambers and being independent vacuum condition.
References Cited (Backward Citations)
US4664951A
Cited
US5180434A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |