US5323053A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates
Assignee: Nokia Bell Labs
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Filing: 1993-07-09
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Granted: 1994-06-21
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Expires: 2013-07-09
Abstract
Abstract In accordance with the present invention, a silicon device fabricated on a (100) silicon substrate is provided with a (111) slant surface and an electrical contact comprising epitaxial low Schottky barrier silicide is formed on the (111) surface. For example, low resistance rare earth silicide contacts on V-groove surfaces are provided for the source and drain contacts of a field effect transistor. The resulting high quality contact permits downward scaling of the source and drain junction depths. As another example, rare earth silicide Schottky contacts are epitaxially grown on V-groove surfaces to provide low voltage rectifiers having both low power dissipation under forward bias and low reverse-bias leakage current.
Inventors
- 👤 Sergey Luryi
- 👤 Gabriel L. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/01; H10D62/021; H10D64/00; H10D64/01; H10D64/011; H10D64/012; H10D64/0121; H10D64/60; H10D64/64; H10D64/647; H10D64/20; H10D64/23; H10D64/251; H10D64/256
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
169 words
An article comprising a silicon body having a major surface, with one or more semiconductor electrical components fabricated on said major surface, a given of said one or more components comprising a) a first and a second n + doped silicon region, with a planar silicon oxide-covered silicon region extending essentially from said first to said second n + doped silicon region; b) means for making electrical contact to said first and second n + -doped silicon regions; and c) means for electrically contacting said silicon oxide; CHARACTERIZED IN THAT d) the major surface comprises a (100)-oriented major portion that comprises said planar silicon oxide-covered silicon region and further comprises at least one (111)-oriented minor portion, and at least one of the means of b) comprises a layer of rare earth silicide, at least a portion of said silicide layer being epitaxial with said at least one (111)-oriented minor portion of the surface and being in contact with one of said first and second n + -doped silicon regions.
Claim 2
Dependent Claim
169 words
An article comprising a silicon body having a major surface, with one or more semiconductor electrical components fabricated on said major surface, a given of said one or more components comprising a) a first and a second n + doped silicon region, with a planar silicon oxide-covered silicon region extending essentially from said first to said second n + doped silicon region; b) means for making electrical contact to said first and second n + -doped silicon regions; and c) means for electrically contacting said silicon oxide; CHARACTERIZED IN THAT d) the major surface comprises a (100)-oriented major portion that comprises said planar silicon oxide-covered silicon region and further comprises at least one (111)-oriented minor portion, and at least one of the means of b) comprises a layer of rare earth silicide, at least a portion of said silicide layer being epitaxial with said at least one (111)-oriented minor portion of the surface and being in contact with one of said first and second n + -doped silicon regions.
Claim 3
Dependent Claim
28 words
An article according to claim 1, wherein said minor portion comprises a V-groove having (111)-oriented sidewalls, and wherein said epitaxial portion of said layer overlies said side walls.
Claim 4
Dependent Claim
16 words
Article according to claim 2, wherein said V-groove has a width of less than 0.5 μm.
Claim 5
Dependent Claim
12 words
An article according to claim 1, wherein the silicide is yttrium silicide.
Claim 6
Dependent Claim
128 words
An article comprising a silicon body having a major surface, with one or more semiconductor electrical components fabricated on said major surface, a given one of said one or more components being a Schottky barrier diode comprising a) a n-doped silicon layer disposed on a n + -doped silicon layer, and a p-doped silicon layer disposed on said n-doped silicon layer; b) a recessed feature extending through said p-doped silicon layer into said n-doped silicon layer; and c) means for electrically contacting said n-doped silicon layer in said recessed feature; CHARACTERIZED IN THAT d) said recessed feature comprises a (111)-oriented surface region, and the means of c) comprise a rare earth silicide layer that is in contact and epitaxial with said (111)-oriented surface region of the recessed feature.
Claim 7
Dependent Claim
128 words
An article comprising a silicon body having a major surface, with one or more semiconductor electrical components fabricated on said major surface, a given one of said one or more components being a Schottky barrier diode comprising a) a n-doped silicon layer disposed on a n + -doped silicon layer, and a p-doped silicon layer disposed on said n-doped silicon layer; b) a recessed feature extending through said p-doped silicon layer into said n-doped silicon layer; and c) means for electrically contacting said n-doped silicon layer in said recessed feature; CHARACTERIZED IN THAT d) said recessed feature comprises a (111)-oriented surface region, and the means of c) comprise a rare earth silicide layer that is in contact and epitaxial with said (111)-oriented surface region of the recessed feature.
Claim 8
Dependent Claim
12 words
An article according to claim 5, wherein said silicide is yttrium silicide.
Claim 9
Dependent Claim
12 words
An article according to claim 5, further comprising a p-doped silicon region.
Claim 10
Dependent Claim
19 words
An article according to claim 7, wherein said p-doped semiconductor region is also in contact with said silicide layer.
References Cited (Backward Citations)
US5040034A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-20 | 1997-12-20 | 1998-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-20 | 2001-12-20 | 2002-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-20 | 2005-12-20 | 2006-06-21 | $7700.00 | Window Closed / Lapsed |