US5321716A
Expired / Lapsed
US
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Distributed Feedback semiconductor laser with controlled phase shift
Assignee: Toshiba Corp
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Filing: 1992-12-16
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Granted: 1994-06-14
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Expires: 2012-12-16
Abstract
Abstract A distributed feedback semiconductor laser comprises a semiconductor substrate, a waveguiding structure, provided on the semiconductor substrate, including a diffraction grating, an active layer and a top layer for ohmic contact, a first electrode provided on the top layer, a second electrode attached to the semiconductor substrate, and means for compensating spatial nonuniformity of a carrier density caused by spatial hole burning. The means changes an electrical resistance between the first electrode and the active layer, corresponding to a spatial distribution of photon density along the waveguiding structure.
Inventors
- 👤 Junichi Kinoshita
- 👤 Kazuaki Otsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:02
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/04; H01S5/042; H01S5/0425; H01S5/04254; H01S5/10; H01S5/12; H01S5/1228; H01S5/124; H01S5/1243; H01S5/20; H01S5/22; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
77 words
A distributed feedback semiconductor laser comprising: a semiconductor substrate; a waveguide, on the semiconductor substrate, including a diffraction grating layer and an active layer; an ohmic contact layer on the waveguide; a first electrode on the ohmic contact layer; a second electrode attached to the semiconductor substrate; and means for controlling an electrical resistance between the first electrode and the active layer, along the waveguide, in accordance with a spatial distribution of photon density along the waveguide.
Claim 2
Dependent Claim
77 words
A distributed feedback semiconductor laser comprising: a semiconductor substrate; a waveguide, on the semiconductor substrate, including a diffraction grating layer and an active layer; an ohmic contact layer on the waveguide; a first electrode on the ohmic contact layer; a second electrode attached to the semiconductor substrate; and means for controlling an electrical resistance between the first electrode and the active layer, along the waveguide, in accordance with a spatial distribution of photon density along the waveguide.
Claim 3
Dependent Claim
23 words
The distributed feedback semiconductor laser according to claim 1, wherein the controlling means is configured to substantially provide an effective phase shift region.
Claim 4
Dependent Claim
54 words
The distributed feedback semiconductor laser according to claim 1, wherein the waveguide includes a first region configured to have a first photon density and a first electrical resistance, and a second region configured to have a photon density lower than the first photon density and an electrical resistance higher than the first electrical resistance.
Claim 5
Dependent Claim
33 words
The distributed feedback semiconductor laser according to claim 3, wherein the first region has a higher impurity level than that of the second region in correspondence with a spatial distribution of photon density.
Claim 6
Dependent Claim
28 words
The distributed feedback semiconductor laser according to claim 3, wherein the first region is thinner than the second region in correspondence with a spatial distribution of photon density.
Claim 7
Dependent Claim
68 words
A distributed feedback semiconductor laser comprising: a semiconductor substrate; a waveguide, on the semiconductor substrate, defining a cavity axis and including a diffraction grating layer and an active layer; an ohmic contact layer on the waveguide; and a plurality of electrode groups attached to the ohmic contact group layer along the cavity axis, each including first divided electrodes and second divided electrodes opposed to the first divided electrodes.
Claim 8
Dependent Claim
68 words
A distributed feedback semiconductor laser comprising: a semiconductor substrate; a waveguide, on the semiconductor substrate, defining a cavity axis and including a diffraction grating layer and an active layer; an ohmic contact layer on the waveguide; and a plurality of electrode groups attached to the ohmic contact group layer along the cavity axis, each including first divided electrodes and second divided electrodes opposed to the first divided electrodes.
Claim 9
Dependent Claim
20 words
The distributed feedback semiconductor laser according to claim 6, wherein the first and second divided electrodes have an inter-digital structure.
Claim 10
Dependent Claim
30 words
The distributed feedback semiconductor laser according to claim 6, further including a power supply connected to at least one of the first and second divided electrodes of each electrode group.
Claim 11
Dependent Claim
28 words
The distributed feedback semiconductor laser according to claim 8, further including means for controlling an electrical resistance between operating first and second divided electrodes and the active layer.
Claim 12
Dependent Claim
43 words
The distributed feedback semiconductor laser according to claim 6, wherein the plurality of electrode groups includes a first group configured to carry a first amount of current, and a second group configured to carry an amount of current less than the first amount.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-13 | 1997-12-13 | 1998-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-13 | 2001-12-13 | 2002-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-13 | 2005-12-13 | 2006-06-14 | $7700.00 | Window Closed / Lapsed |