US5317533A
Expired / Lapsed
US
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Integrated mass storage device
Assignee: Leland Stanford Junior University
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Filing: 1989-01-27
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Granted: 1994-05-31
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Expires: 2009-01-27
Abstract
Abstract PCT No. PCT/US89/00277 Sec. 371 Date Aug. 17, 1990 Sec. 102(e) Date Aug. 17, 1990 PCT Filed Jan. 27, 1989.A integrated mass memory device is formed by combining a piezoelectric bimorph cantilever (214) with a recording surface (212) having a number of storage locations to and from which digital information is transferred using a scanning tunneling microscope or an atomic force microscope mode of operation. Controls circuits (240) are provided for controlling the scanning of the recording surface (212) and for writing and reading information into and from the recording surface. An image storage system stores images captured from an optical sensor using piezoelectric bimorph cantilevers for reading and writing digital information on recording surfaces.
Inventors
- 👤 Calvin F. Quate
- 👤 Mark J. Zdeblick
- 👤 Thomas R. Albrecht
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:24
CPC Classifications
H; H10; H10N; H10N30/00; H10N30/20; H10N30/204; H10N30/2041; H10N30/2042; H10N30/2046; B; B82; B82Y; B82Y35/00; G; G01; G01Q; G01Q10/00; G01Q10/04; G01Q10/045; G01Q60/00; G01Q60/10; G01Q60/16; G11; G11B; G11B9/00; G11B9/12; G11B9/14; G11B9/1418; G11B9/1427; G11B9/1436; G11B9/1463; G11B9/1472; H01; H01J; H01J37/00; H01J37/02; H01J37/20; H10N30/01; H10N30/07; H10N30/074; H10N30/076; B82Y10/00; G01Q80/00; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/832; Y10S977/837; Y10S977/84; Y10S977/849; Y10S977/86; Y10S977/861; Y10S977/872; Y10S977/873; Y10S977/902; Y10S977/932; Y10S977/943; Y10S977/947; Y10T; Y10T29/00; Y10T29/42
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
139 words
An integrated memory device, comprising: a substrate; a recording surface having a recording medium associated therewith for storing information at various locations on said recording surface, said recording surface fixed with respect to said substrate; a piezoelectric bimorph cantilever attached to said substrate at one end and having a free end with a tip fixed thereto, said bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; and control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan said tip over the recording surface to access the various locations on said recording surface.
Claim 2
Dependent Claim
139 words
An integrated memory device, comprising: a substrate; a recording surface having a recording medium associated therewith for storing information at various locations on said recording surface, said recording surface fixed with respect to said substrate; a piezoelectric bimorph cantilever attached to said substrate at one end and having a free end with a tip fixed thereto, said bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; and control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan said tip over the recording surface to access the various locations on said recording surface.
Claim 3
Dependent Claim
19 words
The memory device of claim 1 wherein said recording surface includes a thin dielectric film for storing trapped charge.
Claim 4
Dependent Claim
16 words
The memory device of claim 1 wherein said recording surface includes magnetic films for storing information.
Claim 5
Dependent Claim
21 words
The memory device of claim 1 wherein said recording surface and said piezoelectric bimorph cantilever operate as a scanning tunneling microscope.
Claim 6
Dependent Claim
21 words
The memory device of claim 1 wherein said recording surface and said piezoelectric bimorph cantilever operate as an atomic force microscope.
Claim 7
Dependent Claim
20 words
The memory device of claim 1 including a plurality of recording surfaces, each having a piezoelectric bimorph cantilever associated therewith.
Claim 8
Dependent Claim
193 words
A memory device for writing in or reading out information, comprising: a piezoelectric bimorph cantilever having a tip, said piezoelectric bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said piezoelectric bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; a memory surface for storing information at a plurality of storage locations on said memory surface; wherein said piezoelectric bimorph cantilever and said memory surface form an integrated device with said piezoelectric bimorph cantilever mounted at a fixed position relative to said memory surface; control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan the tip of said piezoelectric bimorph cantilever over the memory surface to align said tip with each of said storage locations on said memory surface; means coupled to said piezoelectric bimorph cantilever's tip for writing information in each of said storage locations; and means coupled to said piezoelectric bimorph cantilever's tip for reading out information stored in each of said storage locations.
Claim 9
Dependent Claim
193 words
A memory device for writing in or reading out information, comprising: a piezoelectric bimorph cantilever having a tip, said piezoelectric bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said piezoelectric bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; a memory surface for storing information at a plurality of storage locations on said memory surface; wherein said piezoelectric bimorph cantilever and said memory surface form an integrated device with said piezoelectric bimorph cantilever mounted at a fixed position relative to said memory surface; control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan the tip of said piezoelectric bimorph cantilever over the memory surface to align said tip with each of said storage locations on said memory surface; means coupled to said piezoelectric bimorph cantilever's tip for writing information in each of said storage locations; and means coupled to said piezoelectric bimorph cantilever's tip for reading out information stored in each of said storage locations.
Claim 10
Dependent Claim
29 words
The memory device of claim 7 wherein said means for writing information includes means for operating said piezoelectric bimorph cantilever and said memory surface as a scanning tunneling microscope.
Claim 11
Dependent Claim
27 words
The memory device of claim 7 wherein the means for reading information and the means for writing information are coupled, respectively, to input terminals and output terminals.
Claim 12
Dependent Claim
169 words
A memory device, comprising: a piezoelectric bimorph cantilever having a tip, said piezoelectric bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said piezoelectric bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; a memory surface for storing information at a plurality of storage locations on said memory surface; wherein said piezoelectric bimorph cantilever and said memory surface form an integrated device with said piezoelectric bimorph cantilever mounted at a fixed position relative to said memory surface; control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan the tip of said piezoelectric bimorph cantilever over the memory surface to align said tip with each of said storage locations on said memory surface; and means coupled to said piezoelectric bimorph cantilever's tip for reading out information stored in each of said storage locations.
Claim 13
Dependent Claim
169 words
A memory device, comprising: a piezoelectric bimorph cantilever having a tip, said piezoelectric bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said piezoelectric bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; a memory surface for storing information at a plurality of storage locations on said memory surface; wherein said piezoelectric bimorph cantilever and said memory surface form an integrated device with said piezoelectric bimorph cantilever mounted at a fixed position relative to said memory surface; control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan the tip of said piezoelectric bimorph cantilever over the memory surface to align said tip with each of said storage locations on said memory surface; and means coupled to said piezoelectric bimorph cantilever's tip for reading out information stored in each of said storage locations.
Claim 14
Dependent Claim
23 words
The memory device of claim 10, including means for operating said piezoelectric bimorph cantilever and said memory surface as a scanning tunneling microscope.
Claim 15
Dependent Claim
156 words
A memory device, comprising: a piezoelectric bimorph cantilever having a tip, said piezoelectric bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said piezoelectric bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; a memory surface for storing information at a plurality of storage locations on said memory surface; wherein said memory surface and said piezoelectric bimorph cantilever are mounted on a common substrate; control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan the tip of said piezoelectric bimorph cantilever over the memory surface to align said tip with each of said storage locations on said memory surface; and means coupled to said piezoelectric bimorph cantilever's tip for reading out information stored in each of said storage locations.
Claim 16
Dependent Claim
156 words
A memory device, comprising: a piezoelectric bimorph cantilever having a tip, said piezoelectric bimorph cantilever including two layers of piezoelectric material sandwiched between multiple pairs of electrodes in such a manner that three axis movement of said piezoelectric bimorph cantilever is caused by applying suitable potentials to said multiple pairs of electrodes; a memory surface for storing information at a plurality of storage locations on said memory surface; wherein said memory surface and said piezoelectric bimorph cantilever are mounted on a common substrate; control means coupled to said multiple pairs of electrodes of the piezoelectric bimorph cantilever, for adjusting the potentials applied between those pairs of electrodes so as to scan the tip of said piezoelectric bimorph cantilever over the memory surface to align said tip with each of said storage locations on said memory surface; and means coupled to said piezoelectric bimorph cantilever's tip for reading out information stored in each of said storage locations.
Claim 17
Dependent Claim
46 words
The memory device of claim 12, including means coupled to said piezoelectric bimorph cantilever's tip for writing information in each of said storage locations, said means for writing information including means, located on said common substrate, for providing said information to said means for writing information.
Claim 18
Dependent Claim
17 words
The memory device of claim 13 wherein said means for providing information includes means for sensing images.
References Cited (Backward Citations)
GB2089169A
Cited
JPS57115887A
Cited
US4651227A
Cited
US4594526A
Cited
US4575822A
Cited
US4647976A
Cited
EP0194323A1
Cited
US4668865A
Cited
USRE33387E
Cited
EP0247219A1
Cited
US4831614A
Cited
EP0251177A2
Cited
US4806755A
Cited
EP0272935A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-30 | 1997-11-29 | 1998-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-30 | 2001-11-29 | 2002-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-30 | 2005-11-29 | 2006-05-31 | $7700.00 | Window Closed / Lapsed |