High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays without a substrate

Claim 2

A high density, surface emitting, semiconductor light emitting diode (LED) array comprising: a first semiconductor confinement layer deposited on a first semiconductor contact layer, said first confinement layer and said first contact layer having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation, said active layer having a smaller bandgap than said first confinement layer, a second semiconductor confinement layer deposited on said active layer, said second confinement layer having a conductivity type opposite that of said first confinement layer, a second semiconductor contact layer deposited on said second semiconductor confinement layer, said second contact layer and said second confinement layer having the same conductivity type, disordered regions extending through said second contact layer, said second confinement layer, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said contact layer and said second confinement layer, at least one contact formed on said first contact layer, and light emitting areas formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said light emitting areas such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said light emitting areas through that portion of the surface of said first contact layer where said contact is not formed on said first contact layer.

Claim 3

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein said first contact layer, said first confinement layer and said disordered regions have n-type conductivity and said second confinement layer and said second contact layer have p-type conductivity.

Claim 4

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein said light emitting areas comprise the nondisordered portions of the second confinement layer, the nondisordered portions of the active layer and the nondisordered portions of the first confinement layer between adjacent said disordered regions.

Claim 5

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 6

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising a refractive semiconductor layer deposited on said first contact layer, said first semiconductor confinement layer deposited on said refractive layer, said light emission from one of said light emitting areas passes through the surface of said refractive layer.

Claim 7

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising a third semiconductor confinement layer deposited on said first confinement layer, said active layer deposited on said third semiconductor confinement layer, a fourth semiconductor confinement layer deposited on said active layer, and said second semiconductor confinement layer deposited on said fourth semiconductor confinement layer, wherein said third and fourth confinement layers have bandgaps intermediate between the bandgaps of said active layer and said first and second confinement layers.

Claim 8

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising an anti-reflective coating on said surface portion of said first contact layer.

Claim 9

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising fresnel lenses etched over said light emitting areas on said surface of said first contact layer.

Claim 10

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising a micro lens array positioned over said light emitting areas on said surface of said first contact layer.

Claim 11

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein said light emitting areas form a two-dimensional array.

Claim 12

A high density, surface emitting, semiconductor light emitting diode (LED) array comprising: a first semiconductor confinement layer deposited on a first semiconductor contact layer, said first confinement layer and said first contact layer having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layers deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite to said first confinement layer and said first contact layer, a second semiconductor contact layer deposited on said DBR, said second contact layer and said DBR having the same conductivity type, disordered regions extending through said second contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said second contact layer and said DBR, at least one contact formed on said first contact layer, and light emitting areas formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said light emitting areas such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said light emitting areas through that portion of the surface of said first contact layer where said contact is not formed on said first contact layer.

Claim 13

A high density, surface emitting, semiconductor light emitting diode (LED) array comprising: a first semiconductor confinement layer deposited on a first semiconductor contact layer, said first confinement layer and said first contact layer having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layers deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite to said first confinement layer and said first contact layer, a second semiconductor contact layer deposited on said DBR, said second contact layer and said DBR having the same conductivity type, disordered regions extending through said second contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said second contact layer and said DBR, at least one contact formed on said first contact layer, and light emitting areas formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said light emitting areas such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said light emitting areas through that portion of the surface of said first contact layer where said contact is not formed on said first contact layer.

Claim 14

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein said first contact layer, said first confinement layer and said disordered regions have n-type conductivity and said DBR and said second contact layer have p-type conductivity.

Claim 15

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein said light emitting areas comprise the nondisordered portions of the DBR, the nondisordered portions of the active layer and the nondisordered portions of the first confinement layer between adjacent said disordered regions.

Claim 16

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 17

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising a refractive semiconductor layer deposited on said first contact layer, said first semiconductor confinement layer deposited on said refractive layer, said light emission from one of said light emitting areas passes through the surface of said refractive layer.

Claim 18

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising a second semiconductor confinement layer deposited on said first confinement layer, said active layer deposited on said second semiconductor confinement layer, a third semiconductor confinement layer deposited on said active layer, and said DBR deposited on said third semiconductor confinement layer, wherein said second and third confinement layers have bandgaps intermediate between the bandgaps of said active layer, and said first confinement layer and said DBR.

Claim 19

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising an anti-reflective coating on said surface portion of said first contact layer.

Claim 20

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising fresnel lenses etched over said light emitting areas on said surface of said contact layer.

Claim 21

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising a micro lens array positioned over said light emitting areas on said surface of said contact layer.

Claim 22

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein said light emitting areas form a two-dimensional array.

Claim 23

A high density, surface emitting, semiconductor laser array comprising: alternating semiconductor layers forming a first distributed Bragg reflector (DBR) deposited on a first semiconductor contact layer, said first contact layer and first DBR having the same conductivity type, an active semiconductor layer deposited on said first DBR, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first DBR, alternating semiconductor layers deposited on said active layer, said alternating layers forming a second distributed Bragg reflector (DBR), said second DBR having a conductivity type opposite to said first DBR, a second semiconductor contact layer deposited on said second DBR, said second contact layer and said second DBR having the same conductivity type, disordered regions extending through said second contact layer, said second DBR, said active layer and at least partially through said first DBR, said disordered regions having a conductivity type opposite that of said second contact layer and said second DBR, at least one contact formed on said first contact layer, and optical cavities formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said optical cavities through that portion of the surface of said first contact layer where said contact is not formed on said contact layer.

Claim 24

A high density, surface emitting, semiconductor laser array comprising: alternating semiconductor layers forming a first distributed Bragg reflector (DBR) deposited on a first semiconductor contact layer, said first contact layer and first DBR having the same conductivity type, an active semiconductor layer deposited on said first DBR, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first DBR, alternating semiconductor layers deposited on said active layer, said alternating layers forming a second distributed Bragg reflector (DBR), said second DBR having a conductivity type opposite to said first DBR, a second semiconductor contact layer deposited on said second DBR, said second contact layer and said second DBR having the same conductivity type, disordered regions extending through said second contact layer, said second DBR, said active layer and at least partially through said first DBR, said disordered regions having a conductivity type opposite that of said second contact layer and said second DBR, at least one contact formed on said first contact layer, and optical cavities formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said optical cavities through that portion of the surface of said first contact layer where said contact is not formed on said contact layer.

Claim 25

The high density, surface emitting, semiconductor laser array of claim 21 wherein said first contact layer, said first DBR and said disordered regions have n-type conductivity and said second DBR and said second contact layer have p-type conductivity.

Claim 26

The high density, surface emitting, semiconductor laser array of claim 21 wherein said optical cavities comprises the nondisordered portions of the second DBR, the nondisordered portions of the active layer and the nondisordered portions of the first DBR between adjacent said disordered regions.

Claim 27

The high density, surface emitting, semiconductor laser array of claim 21 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 28

The high density, surface emitting, semiconductor laser array of claim 21 further comprising a refractive semiconductor layer deposited on said first contact layer, said first DBR deposited on said refractive layer, said light emission from one of said optical cavities passes through the surface of said refractive layer.

Claim 29

The high density, surface emitting, semiconductor laser array of claim 21 further comprising a first semiconductor confinement layer deposited on said first DBR, said active layer deposited on said first semiconductor confinement layer, a second semiconductor confinement layer deposited on said active layer, and said second DBR deposited on said second semiconductor confinement layer, wherein said first and second confinement layers have bandgaps intermediate between the bandgaps of said active layer and said first and second DBRs.

Claim 30

The high density, surface emitting, semiconductor laser array of claim 21 further comprising fresnel lenses etched over said optical cavities on said surface of said first contact layer.

Claim 31

The high density, surface emitting, semiconductor laser array of claim 21 further comprising a micro lens array positioned over said optical cavities on said surface of said first contact layer.

Claim 32

The high density, surface emitting, semiconductor laser array of claim 21 wherein said optical cavities form a two-dimensional array.

Claim 33

A high density, surface emitting, semiconductor laser array comprising: a first semiconductor confinement layer deposited on a first semiconductor contact layer, said first contact layer and said first confinement layer having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layers deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite to said first confinement layer and said first contact layer, a second semiconductor contact layer deposited on said DBR, said second contact layer and said DBR having the same conductivity type, disordered regions extending through said second contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said second contact layer and said DBR, a high reflectivity coating deposited on a portion of surface of said first contact layer, at least one contact formed on said first contact layer where said high reflectivity coating is not deposited on said first contact layer, and optical cavities formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said optical cavities through that portion of the surface of said first contact layer where said high reflectivity coating is deposited on said first contact layer.

Claim 34

A high density, surface emitting, semiconductor laser array comprising: a first semiconductor confinement layer deposited on a first semiconductor contact layer, said first contact layer and said first confinement layer having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layers deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite to said first confinement layer and said first contact layer, a second semiconductor contact layer deposited on said DBR, said second contact layer and said DBR having the same conductivity type, disordered regions extending through said second contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said second contact layer and said DBR, a high reflectivity coating deposited on a portion of surface of said first contact layer, at least one contact formed on said first contact layer where said high reflectivity coating is not deposited on said first contact layer, and optical cavities formed between said disordered regions, contacts formed on said second contact layer, one of said contacts formed on said second contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said second contact layer and said at least one contact on said first contact layer will cause light emission from one of said optical cavities through that portion of the surface of said first contact layer where said high reflectivity coating is deposited on said first contact layer.

Claim 35

The high density, surface emitting, semiconductor laser array of claim 30 wherein said first contact layer, said first confinement layer and said disordered regions have n-type conductivity and said DBR and said contact layer have p-type conductivity.

Claim 36

The high density, surface emitting, semiconductor laser array of claim 30 wherein said optical cavities comprises the nondisordered portions of the DBR, the nondisordered portions of the active layer and the nondisordered portions of the first confinement layer between adjacent said disordered regions.

Claim 37

The high density, surface emitting, semiconductor laser array of claim 30 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 38

The high density, surface emitting, semiconductor laser array of claim 30 further comprising a refractive layer deposited on said first contact layer, said light emission from one of said optical cavities passes through the surface of said refractive layer.

Claim 39

The high density, surface emitting, semiconductor laser array of claim 30 further comprising a second semiconductor confinement layer deposited on said first confinement layer, said active layer deposited on said second semiconductor confinement layer, a third semiconductor confinement layer deposited on said active layer, and said DBR deposited on said third semiconductor confinement layer, wherein said second and third confinement layers have bandgaps intermediate between the bandgaps of said active layer, and said first confinement layer and said DBR.

Claim 40

The high density, surface emitting, semiconductor laser array of claim 30 further comprising fresnel lenses etched over said optical cavities on said surface of said first contact layer.

Claim 41

The high density, surface emitting, semiconductor laser array of claim 30 further comprising a micro lens array positioned over said optical cavities on said surface of said first contact layer.

Claim 42

The high density, surface emitting, semiconductor laser array of claim 30 wherein said optical cavities form a two-dimensional array.