US5312783A
Expired / Lapsed
US
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Process for the preparation of a high dielectric thin film using ECR plasma CVD
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1992-05-28
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Granted: 1994-05-17
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Expires: 2012-05-28
Abstract
Abstract A process for the preparation of a high dielectric thin film. A tantalum oxide film is formed on a substrate at a temperature of from 400° to 850° C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method. A high dielectric film having little leakage current, good surface flatness and good step coverage is obtained.
Inventors
- 👤 Kanetake Takasaki
- 👤 Satoshi Nakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
85 words
A process for the preparation of a high dielectric thin film, which comprises forming a tantalum oxide film on a substrate at a temperature of from 400° to 850° C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method, wherein the tantalum oxide film is a Ta 2 O 5 film, and the tantalum source for the tantalum oxide film is selected from the group consisting of ethoxy tantalum (Ta(OC 2 H 5 ) 5 ) and tantalum chloride.
Claim 2
Dependent Claim
85 words
A process for the preparation of a high dielectric thin film, which comprises forming a tantalum oxide film on a substrate at a temperature of from 400° to 850° C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method, wherein the tantalum oxide film is a Ta 2 O 5 film, and the tantalum source for the tantalum oxide film is selected from the group consisting of ethoxy tantalum (Ta(OC 2 H 5 ) 5 ) and tantalum chloride.
Claim 3
Dependent Claim
51 words
A process according to claim 1 employing an ECR plasma CVD apparatus having an ECR plasma generating chamber and a reaction chamber in communication with the ECR plasma generating chamber, wherein oxygen gas is introduced into the ECR plasma generating chamber and the tantalum source is introduced into the reaction chamber.
Claim 4
Dependent Claim
36 words
A process according to claim 1, wherein the pressure in the ECR generating chamber is maintained in the range of 1×10 -2 Torr to 1×10 -3 Torr, to control the composition of the tantalum oxide film.
References Cited (Backward Citations)
US4492620A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-16 | 1997-11-15 | 1998-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-16 | 2001-11-15 | 2002-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-16 | 2005-11-15 | 2006-05-17 | $7700.00 | Window Closed / Lapsed |