US5308784A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for making the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-10-01
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Granted: 1994-05-03
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Expires: 2012-10-01
Abstract
Abstract There is disclosed in the present invention a method for manufacturing a semiconductor device including an isolation region defined by trenches having different or equal widths respectively on a single semiconductor substrate comprising the steps of: forming insulating films on the semiconductor substrate and then forming an aperture on a passive region (isolation region); forming spacers of etch rate different from that of the insulating films on sidewalls of the aperture to define ring-shaped trench regions surrounding outline of active regions; forming another insulating film of etch rate different from that of the spacers on the substrate where the spacers are defined and removing the spacers by etching to expose the substrate within the etched spacers; and forming trenches on the exposed area of the substrate, forming an insulating film of equal character to that of the insulating films used at the time of the formation of the aperture to refill the trenches and forming the spacers on the sidewalls of the insulating film in the passive region, thereby forming ring-shaped trenches surrounding the outlines of the active regions to be an isolation region.
Inventors
- 👤 Yungi Kim
- 👤 Byeongyeol Kim
- 👤 Soohan Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:14
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
249 words
A method of making a semiconductor device comprising the step of forming at least one layer of an insulating film on a surface of a semi-conductor substrate; removing portions of said insulating film from said surface of the substrate to form a plurality of passive regions exposing said surface and a plurality of active regions with said insulating film thereon; forming a pair of spacers of an etch rate different from the etch rate of said insulating film on said substrate surface and on opposite sides of at least one passive region; forming a second layer of an insulating film on at least said surface of said substrate between said pair of spacers, said second layer having an etch rate different from said etch rate of said spacers; etching said spacers from said substrate to expose said substrate surface thereat; removing portions of the exposed substrate to form a pair of trenches in said substrate on opposite sides of said one passive region; forming a third layer of a high-temperature insulating film over the remaining portions of said one layer, the remaining portions of said second layer of insulating film and each passive region while filling each trench with the material of said third layer; and thereafter etching the high-temperature film and remaining portions of said one layer from the substrate to expose said active regions while retaining said remaining portions of said second layer and while retaining the material in said trenches as spacers in each passive region.
Claim 2
Independent Claim
249 words
A method of making a semiconductor device comprising the step of forming at least one layer of an insulating film on a surface of a semi-conductor substrate; removing portions of said insulating film from said surface of the substrate to form a plurality of passive regions exposing said surface and a plurality of active regions with said insulating film thereon; forming a pair of spacers of an etch rate different from the etch rate of said insulating film on said substrate surface and on opposite sides of at least one passive region; forming a second layer of an insulating film on at least said surface of said substrate between said pair of spacers, said second layer having an etch rate different from said etch rate of said spacers; etching said spacers from said substrate to expose said substrate surface thereat; removing portions of the exposed substrate to form a pair of trenches in said substrate on opposite sides of said one passive region; forming a third layer of a high-temperature insulating film over the remaining portions of said one layer, the remaining portions of said second layer of insulating film and each passive region while filling each trench with the material of said third layer; and thereafter etching the high-temperature film and remaining portions of said one layer from the substrate to expose said active regions while retaining said remaining portions of said second layer and while retaining the material in said trenches as spacers in each passive region.
Claim 3
Dependent Claim
20 words
A method as set forth in claim 1 wherein said second layer of insulating film is made of silicon nitride.
Claim 4
Dependent Claim
17 words
A method as set forth in claim 2 wherein said third layer is made of an oxide.
Claim 5
Dependent Claim
39 words
A method as set forth in claim 1 which further comprises the step of forming a doping layer on said exposed surface of said substrate prior to said step of forming said second layer of an insulating film thereon.
Claim 6
Dependent Claim
34 words
A method as set forth in claim 1 which further comprises the step of forming an oxide layer over the inside surfaces of each trench prior to said step of forming said second film.
Claim 7
Dependent Claim
19 words
A method as set forth in claim 1 wherein each of said pair of spacers is made of polysilicon.
Claim 8
Dependent Claim
94 words
A method as set forth in claim 1 which further comprises the steps of depositing a layer of silicon nitride over the remaining portions of said one layer, said spacers and said exposed surfaces of said substrate; thereafter spin-coating a photoresist film over said layer of silicon nitride; and dry etching said photoresist film to expose portions of said silicon nitride layer over said active regions while leaving a dimple of photoresist film within each passive region prior to said step of forming said second layer of insulating film between said pair of spacers.
Claim 9
Dependent Claim
58 words
A method as set forth in claim 7 which further comprises the steps of etching the silicon nitride layer from over said active regions; and wet-etching said dimple from each passive region while etching said silicon nitride layer from over each spacer in each passive region to form said second layer of insulating film in each passive region.
Claim 10
Dependent Claim
21 words
A method as set forth in claim 1 wherein each trench of a respective passive region surrounds a respective active region.
Claim 11
Independent Claim
199 words
A method of making a semiconductor device comprising the steps of forming at least one layer of an insulating film on a surface of a semi-conductor substrate; removing portions of said insulating film from said surface of said substrate to form a plurality of passive regions exposing said surface and a plurality of active regions with said insulating film thereon; forming a pair of spacers of an etch rate different from the etch rate of said insulating film on said substrate surface on opposite sides of at least one passive region; forming an insulative layer on the exposed surface of said substrate in each passive region between said spacers; thereafter removing said spacers to expose the surface of said substrate thereunder; thereafter removing portions of the exposed substrate to form a pair of trenches in said substrate on opposite sides of said one passive region; removing said insulating layer on said substrate in said one passive region; thereafter filling each trench in said one passive region with a thermal oxide material while forming a layer of the oxide material across said one passive region with an exposed planar surface; and thereafter removing the insulating film over said active regions.
Claim 12
Independent Claim
199 words
A method of making a semiconductor device comprising the steps of forming at least one layer of an insulating film on a surface of a semi-conductor substrate; removing portions of said insulating film from said surface of said substrate to form a plurality of passive regions exposing said surface and a plurality of active regions with said insulating film thereon; forming a pair of spacers of an etch rate different from the etch rate of said insulating film on said substrate surface on opposite sides of at least one passive region; forming an insulative layer on the exposed surface of said substrate in each passive region between said spacers; thereafter removing said spacers to expose the surface of said substrate thereunder; thereafter removing portions of the exposed substrate to form a pair of trenches in said substrate on opposite sides of said one passive region; removing said insulating layer on said substrate in said one passive region; thereafter filling each trench in said one passive region with a thermal oxide material while forming a layer of the oxide material across said one passive region with an exposed planar surface; and thereafter removing the insulating film over said active regions.
Claim 13
Dependent Claim
25 words
A method as set forth in claim 10 wherein the thermal oxide material layer is formed to almost the same level as said substrate surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-02 | 1997-11-01 | 1998-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-02 | 2001-11-01 | 2002-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-02 | 2005-11-01 | 2006-05-03 | $7700.00 | Window Closed / Lapsed |