US5304407A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositing a film
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1993-02-22
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Granted: 1994-04-19
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Expires: 2013-02-22
Abstract
Abstract An apparatus for depositing a film at atmospheric pressure and a method used for this formation are offered. Radicals are produced inside a space in which an electric discharge is induced. This space is shrouded in a purge gas to isolate the space from the outside air, for preventing the radicals traveling to the surface of a substrate from being affected by the outside air. A magnetic field and a bias voltage are made to act on the produced plasma, so that the radicals can reach the substrate surface with greater ease. The arriving radicals promote the formation of the film on the surface of the substrate.
Inventors
- 👤 Shigenori Hayashi
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/455; C23C16/45519; C23C16/45595
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
69 words
A method for depositing a film comprising the steps of: forming a reaction space by flowing a shield gas intervening between said reaction space and atmosphere outside said reaction space; introducing carrier gas and a reactive gas into said reaction space; activating said reactive gas by glow or corona discharge by the use of an electromagnetic energy in said reaction space; and depositing the activated material on a substrate.
Claim 2
Independent Claim
69 words
A method for depositing a film comprising the steps of: forming a reaction space by flowing a shield gas intervening between said reaction space and atmosphere outside said reaction space; introducing carrier gas and a reactive gas into said reaction space; activating said reactive gas by glow or corona discharge by the use of an electromagnetic energy in said reaction space; and depositing the activated material on a substrate.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said reactive gas is activated directly by said electromagnetic energy.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein said carrier gas ia activated to an exciton by said electromagnetic energy and said reactive gas is activated by an energy of said exciton.
Claim 5
Dependent Claim
42 words
The method of claim 1 wherein said shield gas flow is formed toward said substrate in order that said substrate is in contact with said reaction space and serves to keep said reaction space substantially airtight together with said shield gas flow.
Claim 6
Dependent Claim
33 words
The method of claim 1 wherein the introduction of said carrier gas and said reactive gas is carried out substantially at atmospheric pressure in terms of total pressure thereof in said reaction space.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein a magnetic field is applied to said reaction space in order to rotate said material thereby.
Claim 8
Dependent Claim
18 words
The method of claim 6 wherein said magnetic field is 200 Gauss or more in said reaction space.
Claim 9
Dependent Claim
29 words
The method of claim 1 wherein a halogen containing gas is further introduced into said reaction space as catalyst during said introducing step in case of carbon film formation.
Claim 10
Dependent Claim
37 words
The method of claim 1 wherein a gas selected from the group consisting of helium, argon, xenon and hydrogen is further introduced into said reaction space during said introducing step in order to suppress generation of powder.
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein said reactive gas comprises a hydrocarbon gas.
Claim 12
Dependent Claim
64 words
The method of claim 1 wherein a central columnar electrode is provided in said reaction space and a grounded peripheral cylindrical electrode is provided around said central electrode and a cylindrical insulator is provided therebetween and coaxial with said central electrode and said peripheral electrode and said electromagnetic energy is supplied to said reaction space by applying an alternating voltage to said central electrode.
Claim 13
Dependent Claim
16 words
The method of claim 11 wherein frequency of said alternating voltage is 20 KHz or more.
Claim 14
Dependent Claim
28 words
The method of claim 1 wherein a shield gas of said shield gas flow is an inactive gas selected from the group consisting of nitrogen, argon and helium.
Claim 15
Dependent Claim
36 words
The method of claim 1 wherein the introduction of said carrier gas and said reactive gas is carried out at a pressure of 700 to 900 torr in terms of total pressure thereof in said space.
Claim 16
Dependent Claim
13 words
The method of claim 1 wherein said reaction space is substantially kept airtight.
Claim 17
Dependent Claim
11 words
The method of claim 1 wherein said carrier gas is helium.
Claim 18
Dependent Claim
118 words
A plasma processing method comprising the steps of: preparing a central columnar electrode and an outer electrode around said central columnar electrode in a coaxial relation such that a discharge space is formed therebetween; placing a dielectric member between said central columnar electrode and said outer electrode; introducing a reactive gas from one end of said discharge space; applying a high frequency voltage between said central columnar electrode and said outer electrode to form a plasma of said reactive gas; directing said plasma to a surface of an object through another end of said discharge space in order to treat said surface with said plasma, flowing a shield gas to prevent said plasma from directly contacting the air.
Claim 19
Dependent Claim
118 words
A plasma processing method comprising the steps of: preparing a central columnar electrode and an outer electrode around said central columnar electrode in a coaxial relation such that a discharge space is formed therebetween; placing a dielectric member between said central columnar electrode and said outer electrode; introducing a reactive gas from one end of said discharge space; applying a high frequency voltage between said central columnar electrode and said outer electrode to form a plasma of said reactive gas; directing said plasma to a surface of an object through another end of said discharge space in order to treat said surface with said plasma, flowing a shield gas to prevent said plasma from directly contacting the air.
Claim 20
Dependent Claim
18 words
The method of claim 17 wherein said shield gas is applied from a nozzle surrounding said outer electrode.
Claim 21
Dependent Claim
12 words
The method of claim 17 wherein said high frequency voltage is pulsed.
Claim 22
Dependent Claim
17 words
The method of claim 17 further comprising the step of applying bias voltage to said central electrode.
Claim 23
Dependent Claim
14 words
The method of claim 17 further comprising applying a magnetic field to said plasma.
References Cited (Backward Citations)
US5126164A
Cited
US5053243A
Cited
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