US5300484A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MBE or MO-MBE process for forming Bi-Sr-Ca-Cu-O superconducting thin films
Assignee: Fujitsu Ltd
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Filing: 1992-03-13
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Granted: 1994-04-05
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Expires: 2012-03-13
Abstract
Abstract A method of forming a Bi-Sr-Ca-Cu-O system (Bi 2 Sr 2 CaCu 2 O x ) superconducting thin film in which two half-unit cells constitute a Perovskite structure layer, characterized in that Sr and Bi layers, which are present between said half-unit cells, are each deposited without oxidation by using an MBE process or an MO-MBE process with an atomic layer level control capability. A critical current density of the Bi-Sr-Ca-Cu-O system superconducting thin film is not significantly reduced.
Inventors
- 👤 Seigen Otani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:56
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0381; C; C30; C30B; C30B23/00; C30B23/002; C30B23/02; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H10N60/80; H10N60/85; H10N60/855; H10N60/857; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/742
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
149 words
A method of forming a Bi-Sr-Ca-Cu-O system superconducting thin film, in which first and second half-unit cells constitute a Perovskite structure layer, by using an MBE process or an MO-MBE process with an atomic layer level control capability, comprising the steps of: depositing oxide atomic layers of the first Bi-Sr-Ca-Cu-O system half-unit cell on a substrate by sequentially feeding respective metal beams of the metals constituting the Bi-Sr-Ca-Cu-O superconducting thin film and simultaneously oxidizing the metals; depositing a Sr atomic layer by feeding a Sr beam without oxidation on the half-unit cell; depositing at least one Bi atomic layer by feeding a Bi beam without oxidation on the Sr atomic layer; and depositing oxide atomic layers of the second Bi-Sr-Ca-Cu-O system half-unit cell on the Bi atomic layer by sequentially feeding the respective metal beams of the metals constituting the Bi-Sr-Ca-Cu-O superconducting thin film and simultaneously oxidizing the metals.
Claim 2
Independent Claim
149 words
A method of forming a Bi-Sr-Ca-Cu-O system superconducting thin film, in which first and second half-unit cells constitute a Perovskite structure layer, by using an MBE process or an MO-MBE process with an atomic layer level control capability, comprising the steps of: depositing oxide atomic layers of the first Bi-Sr-Ca-Cu-O system half-unit cell on a substrate by sequentially feeding respective metal beams of the metals constituting the Bi-Sr-Ca-Cu-O superconducting thin film and simultaneously oxidizing the metals; depositing a Sr atomic layer by feeding a Sr beam without oxidation on the half-unit cell; depositing at least one Bi atomic layer by feeding a Bi beam without oxidation on the Sr atomic layer; and depositing oxide atomic layers of the second Bi-Sr-Ca-Cu-O system half-unit cell on the Bi atomic layer by sequentially feeding the respective metal beams of the metals constituting the Bi-Sr-Ca-Cu-O superconducting thin film and simultaneously oxidizing the metals.
Claim 3
Dependent Claim
31 words
A method according to claim 1, wherein a single Sr atomic layer and two Bi atomic layers are formed between respective CuO atomic layers of the first and second half-unit cells.
References Cited (Backward Citations)
EP0292958A2
Cited
EP0305292A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |