US5300459A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing thermal stress in an encapsulated integrated circuit package
Assignee: Sanken Electric Co Ltd
•
Filing: 1992-11-04
•
Granted: 1994-04-05
•
Expires: 2012-11-04
Abstract
Abstract A method wherein a circuit substrate device is provided having a semiconductor element and a circuit substrate between which a protective resin is placed. The protective resin has a smaller coefficient of linear expansion than that of the circuit substrate and a greater coefficient of linear expansion than that of the semiconductor element. Therefore, the protective resin may mitigate the influences of thermal stress due to differential in the thermal coefficients of expansion between the semiconductor element and circuit substrate to prevent warpage of the circuit substrate.
Inventors
- 👤 Takao Ushikubo
- 👤 Naoyuki Kuroe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 05:42
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/121; H10W70/00; H10W70/40; H10W70/464; H10W70/481; H10W74/40; H10W74/43; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/072; H10W72/07251; H10W72/075; H10W72/20; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49146
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
248 words
A method for manufacturing a circuit substrate device comprising the steps of: preparing a circuit substrate with a semiconductor element wherein a conductive pattern is formed on a main surface of the substrate and wherein said semiconductor element is electrically connected via electrode lugs to said conductive pattern, main surfaces of said semiconductor element and said circuit substrate being placed in an opposite and spaced relation to each other; filling an area defined between said circuit substrate and said semiconductor element with a first protective resin which contains granular silica of 85.5 to 96.5 by weight percent, a volatile solvent and a first resin selected from the group consisting of polyimide and polyamide, to produce a smaller coefficient of linear expansion of said first protective resin than that of said circuit substrate and a greater coefficient of linear expansion of said first protective resin than that of said semiconductor element; applying a second protective resin over said semiconductor element and said first protective resin, said second protective resin containing granular silica, volatile solvent and a second resin selected from the group consisting of polyimide and polyamide, wherein the content of said granular silica in said second protective resin is smaller by 2 weight percent or more than that in said first protective resin to produce a greater coefficient of linear expansion of said second protective resin than that of said first protective resin; and removing the volatile solvent substantially by volatilization from said first and second protective resins.
Claim 2
Independent Claim
248 words
A method for manufacturing a circuit substrate device comprising the steps of: preparing a circuit substrate with a semiconductor element wherein a conductive pattern is formed on a main surface of the substrate and wherein said semiconductor element is electrically connected via electrode lugs to said conductive pattern, main surfaces of said semiconductor element and said circuit substrate being placed in an opposite and spaced relation to each other; filling an area defined between said circuit substrate and said semiconductor element with a first protective resin which contains granular silica of 85.5 to 96.5 by weight percent, a volatile solvent and a first resin selected from the group consisting of polyimide and polyamide, to produce a smaller coefficient of linear expansion of said first protective resin than that of said circuit substrate and a greater coefficient of linear expansion of said first protective resin than that of said semiconductor element; applying a second protective resin over said semiconductor element and said first protective resin, said second protective resin containing granular silica, volatile solvent and a second resin selected from the group consisting of polyimide and polyamide, wherein the content of said granular silica in said second protective resin is smaller by 2 weight percent or more than that in said first protective resin to produce a greater coefficient of linear expansion of said second protective resin than that of said first protective resin; and removing the volatile solvent substantially by volatilization from said first and second protective resins.
Claim 3
Dependent Claim
52 words
A method according to claim 1 wherein the content of said volatile solvent added to said second protective resin is less than the content of said volatile solvent added to said first protective resin, thereby resulting in a smaller porosity of said second protective resin than that of said first protective resin.
Claim 4
Dependent Claim
50 words
A method according to claim 1 wherein mixture ratio by weight of said first resin to said granular silica in said first protective resin is 1 to 9, and mixture ratio by weight of said second resin to said granular silica in said second protective resin is 2 to 8.
Claim 5
Dependent Claim
37 words
A method according to claim 1 including the step of applying a resin encapsulant covering said second protective resin, wherein the second protective resin has a smaller coefficient of linear expansion than that of said resin encapsulant.
Claim 6
Dependent Claim
59 words
A method according to claim 1 including the step of providing that the average grain size of granular silica in the first protective resin is from 5 to 25 microns and that the average grain size of granular silica in the second protective resin is larger by 5 microns or more than that contained in the first protective resin.
Claim 7
Independent Claim
266 words
A method for manufacturing a circuit substrate device comprising the steps of: preparing a circuit substrate with a semiconductor element wherein a conductive pattern is formed on a main surface of the substrate and wherein said semiconductor element is electrically connected via electrode lugs to said conductive pattern, main surfaces of said semiconductor element and said circuit substrate being placed in an opposite and spaced relation to each other; filling an area defined between said circuit substrate and said semiconductor element with a first protective resin which contains granular silica of 85.5 to 96.5 weight percent, a volatile solvent and a first resin selected from the group consisting of polyimide and polyamide, to produce a smaller coefficient of linear expansion of said first protective resin than that of said circuit substrate and a greater coefficient of linear expansion of said first protective resin than that of said semiconductor element; removing at least a part of volatile solvent contained in said first protective resin by volatilization; applying a second protective resin over said semiconductor element and said first protective resin, said second protective resin containing granular silica, volatile solvent and a second resin selected from the group consisting of polyimide and polyamide, wherein the content of said granular silica in said second protective resin is smaller by 2 weight percent or more than that in said first protective resin to produce greater coefficient of linear expansion of said second protective resin than that of said first protective resin; and removing a substantial majority of the remaining volatile solvent by volatilization from said first and second protective resins.
Claim 8
Independent Claim
266 words
A method for manufacturing a circuit substrate device comprising the steps of: preparing a circuit substrate with a semiconductor element wherein a conductive pattern is formed on a main surface of the substrate and wherein said semiconductor element is electrically connected via electrode lugs to said conductive pattern, main surfaces of said semiconductor element and said circuit substrate being placed in an opposite and spaced relation to each other; filling an area defined between said circuit substrate and said semiconductor element with a first protective resin which contains granular silica of 85.5 to 96.5 weight percent, a volatile solvent and a first resin selected from the group consisting of polyimide and polyamide, to produce a smaller coefficient of linear expansion of said first protective resin than that of said circuit substrate and a greater coefficient of linear expansion of said first protective resin than that of said semiconductor element; removing at least a part of volatile solvent contained in said first protective resin by volatilization; applying a second protective resin over said semiconductor element and said first protective resin, said second protective resin containing granular silica, volatile solvent and a second resin selected from the group consisting of polyimide and polyamide, wherein the content of said granular silica in said second protective resin is smaller by 2 weight percent or more than that in said first protective resin to produce greater coefficient of linear expansion of said second protective resin than that of said first protective resin; and removing a substantial majority of the remaining volatile solvent by volatilization from said first and second protective resins.
Claim 9
Dependent Claim
49 words
A method according to claim 6 wherein the content of said volatile solvent in said second protective resin is smaller than the content of said volatile solvent in said first protective resin, thereby resulting in smaller porosity of said second protective resin than that of said first protective resin.
Claim 10
Dependent Claim
50 words
A method according to claim 6 wherein mixture ratio by weight of said first resin to said granular silica in said first protective resin is 1 to 9, and mixture ratio by weight of said second resin to said granular silica in said second protective resin is 2 to 8.
Claim 11
Dependent Claim
59 words
A method according to claim 6 including the step of providing that the average grain size of granular silica in the first protective resin is from 5 to 25 microns and that the average grain size of granular silica in the second protective resin is larger by 5 microns or more than that contained in the first protective resin.
References Cited (Backward Citations)
US3265647A
Cited
US3658750A
Cited
US3693252A
Cited
US4001655A
Cited
US4271061A
Cited
JPS5810841A
Cited
JPS58110061A
Cited
JPS59186351A
Cited
US4923520A
Cited
US4615741A
Cited
US4970575A
Cited
JPS61179544A
Cited
US4701479A
Cited
US4788583A
Cited
JPS6390845A
Cited
US5068712A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |