US5296460A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CVD method for forming Bi -containing oxide superconducting films
Assignee: Northwestern University
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Filing: 1992-08-05
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Granted: 1994-03-22
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Expires: 2012-08-05
Abstract
Abstract Films of high T c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C 6 H 5 ) 3 , deposited on a heated substrate to form a film, and annealed.
Inventors
- 👤 Bruce W. Wessels
- 👤 Tobin J. Marks
- 👤 Darrin S. Richeson
- 👤 Lauren M. Tonge
- 👤 Jiming Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:43
CPC Classifications
C; C07; C07C; C07C45/00; C07C45/77; C07C49/00; C07C49/92; C07F; C07F1/00; C07F1/005; C07F3/00; C07F3/003; C07F5/00; C07F5/003; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/408; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; H10N60/0464; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/734; Y10S505/742
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
252 words
A method for the preparation of a superconductive ceramic film by chemical vapor deposition comprising the steps of: (a) flushing evaporation chambers with an inert gas; (b) placing at least three metal organic beta-diketonate complexes in said chambers, the first of said complexes being based on Sr and being placed in a first flushed chamber, the second of said complexes being based on Ca and being placed in a second flushed chamber, the third of said complexes being based on Cu and being placed in a third flushed chamber; (c) placing a compound of the formula BiR 3 " where R" is selected from the group consisting of alkyl, alkoxide, aryl and halide in a fourth flushed chamber; (d) heating each of said complexes to its vaporizing temperature to cause a source flow comprising vapors of each of said complexes in each respective chamber; (e) heating a substrate to a temperature of about 500° C.-700° C. in a heated deposition chamber; (f) transporting said vapors into said heated deposition chamber; (g) initiating a flow of water vapor into said deposition chamber; (h) depositing a film from said vapors onto said substrate in said deposition chamber; (i) terminating said source flow; (j) maintaining said water vapor flow; and (k) adjusting the temperature of said substrate to the range of 600° C.-950° C. in flowing oxygen to thereby anneal said film to result in said superconductive ceramic film represented by the formula Bi 2 Sr 2 Ca n-1 Cu n oxide; n=1, 2, 3.
Claim 2
Independent Claim
252 words
A method for the preparation of a superconductive ceramic film by chemical vapor deposition comprising the steps of: (a) flushing evaporation chambers with an inert gas; (b) placing at least three metal organic beta-diketonate complexes in said chambers, the first of said complexes being based on Sr and being placed in a first flushed chamber, the second of said complexes being based on Ca and being placed in a second flushed chamber, the third of said complexes being based on Cu and being placed in a third flushed chamber; (c) placing a compound of the formula BiR 3 " where R" is selected from the group consisting of alkyl, alkoxide, aryl and halide in a fourth flushed chamber; (d) heating each of said complexes to its vaporizing temperature to cause a source flow comprising vapors of each of said complexes in each respective chamber; (e) heating a substrate to a temperature of about 500° C.-700° C. in a heated deposition chamber; (f) transporting said vapors into said heated deposition chamber; (g) initiating a flow of water vapor into said deposition chamber; (h) depositing a film from said vapors onto said substrate in said deposition chamber; (i) terminating said source flow; (j) maintaining said water vapor flow; and (k) adjusting the temperature of said substrate to the range of 600° C.-950° C. in flowing oxygen to thereby anneal said film to result in said superconductive ceramic film represented by the formula Bi 2 Sr 2 Ca n-1 Cu n oxide; n=1, 2, 3.
Claim 3
Dependent Claim
22 words
The method of claim 1 further including the step of adding oxygen to the deposition chamber with said flow of water vapor.
References Cited (Backward Citations)
No citation records indexed.
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| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |