US5287663A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polishing pad and method for polishing semiconductor wafers
Assignee: National Semiconductor Corp
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Filing: 1992-04-28
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Granted: 1994-02-22
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Expires: 2012-04-28
Abstract
Abstract A polishing pad and a method for polishing semiconductor wafers. The polishing pad includes a polishing layer and a rigid layer. The rigid layer adjacent the polishing layer imparts a controlled rigidity to the polishing layer. The resilient layer adjacent the rigid layer provides substantially uniform pressure to the rigid layer. During operation, the rigid layer and the resilient layer apply an elastic flexure pressure to the polishing layer to induce a controlled flex in the polishing layer to conform to the global topography of the wafer surface while maintaining a controlled rigidity over the local topography of the wafer surface.
Inventors
- 👤 John M. Pierce
- 👤 Peter H. Renteln
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:02
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/11; B24B37/20; B24B37/22
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
167 words
A polishing pad for selectively polishing and planarizing a semiconductor wafer having regions of device integration density formed on a surface of the semiconductor wafer, the regions of device integration density being separated from one another by lateral gaps on the surface of the semiconductor wafer, the polishing pad comprising: (a) a polishing layer having a nonabrasive polishing surface for polishing and planarizing the surface of the wafer; (b) a substantially nonelastic rigid layer of selected rigidity positioned adjacent to the polishing layer; and (c) a resilient layer positioned adjacent to the rigid layer; wherein the substantially nonelastic rigidity of the rigid layer is established by selecting a material therefor with a modulus of elasticity and thickness whereby a substantially uniform pressure applied to the resilient layer causes the resilient layer and the rigid layer together to apply an elastic flexure pressure to the polishing layer such that the polishing pad has a leveling length equal to the largest lateral gap on the surface of the wafer.
Claim 2
Dependent Claim
167 words
A polishing pad for selectively polishing and planarizing a semiconductor wafer having regions of device integration density formed on a surface of the semiconductor wafer, the regions of device integration density being separated from one another by lateral gaps on the surface of the semiconductor wafer, the polishing pad comprising: (a) a polishing layer having a nonabrasive polishing surface for polishing and planarizing the surface of the wafer; (b) a substantially nonelastic rigid layer of selected rigidity positioned adjacent to the polishing layer; and (c) a resilient layer positioned adjacent to the rigid layer; wherein the substantially nonelastic rigidity of the rigid layer is established by selecting a material therefor with a modulus of elasticity and thickness whereby a substantially uniform pressure applied to the resilient layer causes the resilient layer and the rigid layer together to apply an elastic flexure pressure to the polishing layer such that the polishing pad has a leveling length equal to the largest lateral gap on the surface of the wafer.
Claim 3
Dependent Claim
29 words
The polishing pad of claim 1 wherein the rigidity of the rigid layer is selected such that the leveling length of the polishing pad is between 0.5 mm-2.0 cm.
Claim 4
Dependent Claim
161 words
A polishing pad for selectively polishing and planarizing a semiconductor wafer having a plurality of spaced-apart steps having an average height h formed on a surface of the wafer, the polishing pad comprising: (a) a polishing layer having a nonabrasive polishing surface for polishing and planarizing the surface of the wafer; (b) a substantially nonelastic rigid layer of selected rigidity positioned adjacent to the polishing layer; and (c) a resilient layer positioned adjacent to the rigid layer; wherein the substantially nonelastic rigidity of the rigid layer is established by selecting a material therefor with a modulus of elasticity and thickness whereby a substantially uniform pressure applied to the resilient layer causes the resilient layer and the rigid layer together to apply an elastic flexible pressure to the polishing layer such that, in the spaces between the steps, the polishing surface flexes a controlled amount equal to 5-95% of the average height h of the steps on the surface of the wafer.
Claim 5
Dependent Claim
161 words
A polishing pad for selectively polishing and planarizing a semiconductor wafer having a plurality of spaced-apart steps having an average height h formed on a surface of the wafer, the polishing pad comprising: (a) a polishing layer having a nonabrasive polishing surface for polishing and planarizing the surface of the wafer; (b) a substantially nonelastic rigid layer of selected rigidity positioned adjacent to the polishing layer; and (c) a resilient layer positioned adjacent to the rigid layer; wherein the substantially nonelastic rigidity of the rigid layer is established by selecting a material therefor with a modulus of elasticity and thickness whereby a substantially uniform pressure applied to the resilient layer causes the resilient layer and the rigid layer together to apply an elastic flexible pressure to the polishing layer such that, in the spaces between the steps, the polishing surface flexes a controlled amount equal to 5-95% of the average height h of the steps on the surface of the wafer.
Claim 6
Dependent Claim
31 words
The polishing pad of claim 3 wherein the polishing surface flexes an amount equal to approximately 50% of the average height h of the steps on the surface of the wafer.
Claim 7
Dependent Claim
16 words
The polishing pad of claim 3 wherein the polishing surface is less than 0.003 inches thick.
Claim 8
Dependent Claim
25 words
The polishing pad of claim 3 wherein the resilient layer comprises a material having a compression modulus of 300 to 600 pounds per square inch.
Claim 9
Dependent Claim
16 words
The polishing pad of claim 6 wherein the resilient layer is 0.030 to 0.060 inches thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-21 | 1997-08-23 | 1998-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-21 | 2001-08-23 | 2002-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-21 | 2005-08-23 | 2006-02-22 | $7700.00 | Window Closed / Lapsed |