FET bidirectional switching arrangements and methods for preventing pn junctions of FETs from being forward-biased

Claim 2

A FET switching arrangement, comprising: first and second FETs operable in response to a first bias condition to pass current in series through the FETs in either of two opposite directions, and operable in response to a second bias condition to block current through the FETs in both of the two opposite directions; and a limiting arrangement connected to the FETs for sensing the direction of current flowing through the FETs, for limiting a forward bias on a first pn junction of the first FET when the current flows in a first direction of the two opposite directions to limit undesired current flow through the first pn junction of the first FET, and for limiting a forward bias on a first pn junction of the second FET when the current flows in a second direction of the two opposite directions to limit undesired current flow through the first pn junction of the second FET.

Claim 3

A FET switching arrangement as defined in claim 1, wherein the limiting arrangement comprises: a sensing impedance connected in series with the FETs; and first and second switching devices operable in response to a voltage developed across the sensing impedance by current flow through the sensing impedance, the first switching device responding to a voltage of a first polarity to shunt the first pn junction of the first FET, and the second switching device responding to a voltage of a second polarity to shunt the first pn junction of the second FET.

Claim 4

A FET switching arrangement as defined in claim 2, further comprising first and second shunt impedances connected across second pn junctions of the first and second FETs respectively.

Claim 5

A FET switching network as defined in claim 3, wherein the first and second switching devices comprise third and fourth FETs respectively, the third FET being connected across the first pn junction of the first FET, the fourth FET being connected across the first pn junction of the second FET, and the sensing impedance being connected between gates of the third and fourth FETs.

Claim 6

A FET switching arrangement as defined in claim 4, further comprising first and second FET-biasing impedances connected to gates of the first and second FETs respectively, the FET-biasing impedances for developing the first and second bias conditions in the absence or presence respectively of a current of a suitable polarity passing through the FET-biasing impedances.

Claim 7

A FET switching arrangement as defined in claim 4, wherein: the sensing impedance comprises first and second impedances connected in series between the first and second FETs, the first and second impedances being connected at a connection point; and the FET switching arrangement further comprises a FET-biasing impedance connected from gates of the first and second FETs to the connection point for developing the first and second bias conditions in the absence and presence respectively of a current of suitable polarity passing through the FET-biasing impedance.

Claim 8

A FET switching arrangement as defined in claim 6, wherein each of the first and second impedances comprises a pair of pn junctions connected in anti-parallel.

Claim 9

A FET switching arrangement as defined in claim 4, comprising clamping arrangements for protecting the third and fourth FETs.

Claim 10

A FET switching arrangement as defined in claim 3, comprising clamping arrangements responsive to the direction of current flow through the sensing impedance for shunting the second shunt impedance when the current flows in the first direction and for shunting the first shunt impedance when the current flows in the second direction.

Claim 13

A method as defined in claim 10, comprising limiting the forward bias on the first pn junctions by selectively shunting the first pn junctions.

Claim 14

A FET switching arrangement, comprising: first and second FETs operable in response to a first bias condition to pass current in series through the FETs in either of two opposite directions, and operable in response to a second bias condition to block current flow through the FETs in both of the two opposite directions, each of the first and second FETs comprising a bulk region of a first doping polarity, first and second doped wells of a second doping polarity opposite to the first doping polarity, the first and second doped wells being spaced apart within the bulk region, and a gate on the bulk region between the first and second doped wells, the first doped well and the bulk region together defining a first pn junction of each FET and the second doped well and the bulk region together defining a second pn junction of each FET; and a limiting arrangement connected to the FETs for sensing the direction of current flow through the FETs, for limiting a forward bias on the first pn junction of the first FET when majority carrier current flows from the first doped well to the bulk region in the first FET to limit undesired current flow through the first pn junction of the first FET. and for limiting a forward bias on a first junction of the second FET when majority carrier current flows from the first doped well to the bulk region in the second FET to limit undesired current flow through the first pn junction of the second FET.

Claim 15

A FET switching arrangement, comprising: first and second FETs operable in response to a first bias condition to pass current in series through the FETs in either of two opposite directions, and operable in response to a second bias condition to block current flow through the FETs in both of the two opposite directions, each of the first and second FETs comprising a bulk region of a first doping polarity, first and second doped wells of a second doping polarity opposite to the first doping polarity, the first and second doped wells being spaced apart within the bulk region, and a gate on the bulk region between the first and second doped wells, the first doped well and the bulk region together defining a first pn junction of each FET and the second doped well and the bulk region together defining a second pn junction of each FET; and a limiting arrangement connected to the FETs for sensing the direction of current flow through the FETs, for limiting a forward bias on the first pn junction of the first FET when majority carrier current flows from the first doped well to the bulk region in the first FET to limit undesired current flow through the first pn junction of the first FET. and for limiting a forward bias on a first junction of the second FET when majority carrier current flows from the first doped well to the bulk region in the second FET to limit undesired current flow through the first pn junction of the second FET.

Claim 16

A FET switching arrangement as defined in claim 12, wherein the limiting arrangement comprises: a sensing impedance connected between the second doped well of the first FET and the second doped well of the second FET; a third FET having a bulk region of the first doping polarity, first and second first doped wells of the second doping polarity spaced apart within the bulk region, and a gate on the bulk region between the first and second doped wells, the first doped well being connected to the first doped well of the first FET, the second doped well and the bulk region being connected to the bulk region of the first FET, and the gate being connected to the second doped well of the second FET; and a fourth FET having a bulk region of the first doping polarity, first and second doped wells of the second doping polarity spaced apart within the bulk region, and a gate on the bulk region between the first and second doped wells, the first doped well being connected to the first doped well of the second FET, the second doped well and the bulk region being connected to bulk region of the second FET, and the gate being connected to the second doped region of the first FET.

Claim 17

A FET switching arrangement as defined in claim 13, further comprising: a first shunt impedance connected between the bulk region and the second doped well of the first FET; and a second shunt impedance connected between the bulk region and the second doped well of the second FET.

Claim 18

A FET switching arrangement as defined in claim 14, further comprising: a first FET-biasing impedance connected between the second doped well and the gate of the first FET; and a second FET-biasing impedance connected between the second doped well and the gate of the second FET.

Claim 19

A FET switching arrangement as defined in claim 14, wherein: the sensing impedance comprises first and second impedances connected in series between the second doped wells of the first and second FETs, the first and second impedances being connected at a connection point; the gates of the first and second FETs are connected together; and the FET switching arrangement further comprises a FET-biasing impedance connected between the gates of the first and second FETs and the connection point.

Claim 20

A FET switching arrangement as defined in claim 16, wherein each of the first and second impedances comprises a pair of pn junctions connected in anti-parallel.

Claim 21

A FET switching arrangement as defined in claim 14, further comprising: a first Zener diode connected between the gate and the second doped well of the third FET to protect the third FET; and a second Zener diode connected between the gate and the second doped well of the fourth FET to protect the fourth FET.

Claim 22

A FET switching arrangement as defined in claim 14, wherein: the sensing impedance comprises first and second impedances connected in series between the second doped wells of the first and second FETs, the first and second impedances being connected at a connection point, each of the first and second impedances comprising a pair of pn junctions connected in anti-parallel; and the FET switching arrangement further comprises a first pn junction connected between the bulk region of the first FET and the connection point for shunting the first shunt impedance when the third FET is off, and a second pn junction connected between the bulk region of the second FET and the connection point for shunting the second shunt impedance when the fourth FET is off.

Claim 23

A FET switching arrangement as defined in claim 12 implemented as a monolithic integrated circuit, wherein: the bulk region of the first FET is contiguous with the bulk region of the third FET and the first doped well of the first FET is contiguous with the first doped well of the third FET; and the bulk region of the second FET is contiguous with the bulk region of the fourth FET and the first doped well of the second FET is contiguous with the first doped well of the fourth FET.