US5286660A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for doping a semiconductor wafer having a diffusivity enhancement region
Assignee: Semiconductor Components Industries LLC
•
Filing: 1992-12-24
•
Granted: 1994-02-15
•
Expires: 2012-12-24
Abstract
Abstract A diffusivity and a solubility of dopant atoms are increased within a semiconductor wafer (30). A portion (36) of the semiconductor wafer (30) is disrupted by a technique of ion implantation thereby forming a defect layer (36). A predeposition layer (37) is formed by placing the semiconductor wafer (30) in a predeposition furnace. The defect layer (36) has a large number of point defects in a semiconductor crystal lattice which accept dopant atoms in excess of their solid solubility limit. The point defects increase the diffusivity and solubility of the dopant atoms thereby increasing a junction depth and surface concentration in subsequent high temperature diffusion steps.
Inventors
- 👤 Herng-Der Chiou
- 👤 Gary G. Ehlenberger
- 👤 Earl D. Fuchs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:42
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D1/00; H10D1/01; H10D1/025; H10D10/00; H10D10/01; H10D10/051; H10D8/00; H10D8/01; H10D8/021; H10D8/022; H10P30/208; H10P30/225; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
102 words
A method for doping a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a monocrystalline lattice structure and a major surface; disrupting a portion of the monocrystalline lattice structure, wherein the portion extends from the major surface into the semiconductor wafer; forming a dopant predeposition layer on the disrupted portion of the major surface and a portion of the major surface that is not disrupted; and performing a drive-in step wherein the dopant diffuses into the semiconductor wafer forming a first junction and a second junction simultaneously, the first junction at a shallower junction depth than the second junction.
Claim 2
Independent Claim
102 words
A method for doping a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a monocrystalline lattice structure and a major surface; disrupting a portion of the monocrystalline lattice structure, wherein the portion extends from the major surface into the semiconductor wafer; forming a dopant predeposition layer on the disrupted portion of the major surface and a portion of the major surface that is not disrupted; and performing a drive-in step wherein the dopant diffuses into the semiconductor wafer forming a first junction and a second junction simultaneously, the first junction at a shallower junction depth than the second junction.
Claim 3
Dependent Claim
31 words
A method for doping a semiconductor wafer as claimed in claim 1 wherein the step of disrupting a portion of the monocrystalline lattice structure includes implanting ions into the major surface.
Claim 4
Dependent Claim
26 words
A method for doping a semiconductor wafer as claimed in claim 2 wherein the step of implanting ions into the major surface includes implanting argon ions.
Claim 5
Dependent Claim
26 words
A method for doping a semiconductor wafer as claimed in claim 1 wherein the step of forming a dopant predeposition layer includes using a gaseous source.
Claim 6
Independent Claim
124 words
A method for introducing a dopant into a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a single crystalline lattice structure and a major surface; forming a layer of dielectric material over the major surface, the layer of dielectric material patterned to expose a first portion of the major surface; implanting ions into the first portion of the major surface thereby disrupting the single crystalline lattice structure of the first portion; exposing a second portion of the major surface, the second portion of the major surface adjacent the first portion of the major surface; depositing a dopant on the first and second portions of the major surface; and diffusing the dopant into the semiconductor wafer through the first and second portions.
Claim 7
Independent Claim
124 words
A method for introducing a dopant into a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a single crystalline lattice structure and a major surface; forming a layer of dielectric material over the major surface, the layer of dielectric material patterned to expose a first portion of the major surface; implanting ions into the first portion of the major surface thereby disrupting the single crystalline lattice structure of the first portion; exposing a second portion of the major surface, the second portion of the major surface adjacent the first portion of the major surface; depositing a dopant on the first and second portions of the major surface; and diffusing the dopant into the semiconductor wafer through the first and second portions.
Claim 8
Dependent Claim
29 words
A method for introducing a dopant into a semiconductor wafer as claimed in claim 5 wherein the step of implanting ions into the major surface includes implanting argon ions.
Claim 9
Dependent Claim
47 words
A method for introducing a dopant into a semiconductor wafer as claimed in claim 6 wherein the step of implanting argon ions into the major surface includes implanting argon at a dose of approximately 5×10 15 ions/cm 2 and an implant energy of approximately 120 kilo-electron volts.
Claim 10
Dependent Claim
32 words
A method for introducing a dopant into a semiconductor wafer as claimed in claim 7 wherein the step of depositing a dopant on the major surface includes depositing a dopant comprising boron.
Claim 11
Dependent Claim
40 words
A method for introducing a dopant into a semiconductor wafer as claimed in claim 5 wherein the step of depositing the dopant into the semiconductor wafer includes depositing the dopant at a temperature between, approximately, 750° C. and 1000° C.
Claim 12
Independent Claim
67 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer, comprising the steps of: providing a semiconductor wafer wherein the semiconductor wafer has a crystalline lattice structure; altering a portion of the crystalline lattice structure; providing a semiconductor dopant in the altered portion and in an adjacent unaltered portion of the crystalline lattice structure; and diffusing the semiconductor dopant into the semiconductor wafer.
Claim 13
Independent Claim
67 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer, comprising the steps of: providing a semiconductor wafer wherein the semiconductor wafer has a crystalline lattice structure; altering a portion of the crystalline lattice structure; providing a semiconductor dopant in the altered portion and in an adjacent unaltered portion of the crystalline lattice structure; and diffusing the semiconductor dopant into the semiconductor wafer.
Claim 14
Dependent Claim
44 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 10 wherein the step of altering a portion of the crystalline lattice structure includes converting the portion of the crystalline lattice structure into an amorphous layer.
Claim 15
Dependent Claim
43 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 10 wherein the step of altering a portion of the crystalline lattice structure includes implanting an ion in the portion of the crystalline lattice structure.
Claim 16
Dependent Claim
34 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 12 wherein the step of altering a portion of the crystalline lattice structure includes implanting argon.
Claim 17
Dependent Claim
35 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 10 wherein the step of providing a semiconductor dopant includes providing a dopant from a gaseous source.
Claim 18
Dependent Claim
35 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 10 wherein the step of providing a semiconductor dopant includes providing a dopant from a solid source.
Claim 19
Dependent Claim
41 words
A method of modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 10 wherein the step of diffusing the semiconductor includes forming at least two junctions, the at least two junctions at different junction depths.
Claim 20
Dependent Claim
52 words
A method for modulating a solubility of a semiconductor dopant in a semiconductor wafer as claimed in claim 10 wherein the step of providing a semiconductor wafer includes providing a semiconductor wafer wherein the semiconductor material is selected from the group consisting of silicon, gallium arsenide, germanium, silicon germanium, or indium phosphide.
References Cited (Backward Citations)
US3796929A
Cited
US4216030A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-14 | 1997-08-16 | 1998-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-14 | 2001-08-16 | 2002-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-14 | 2005-08-16 | 2006-02-15 | $7700.00 | Window Closed / Lapsed |