US5286306A
Expired / Lapsed
US
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Thin film photovoltaic cells from I-III-VI-VII compounds
Assignee: Individual
•
Filing: 1992-02-07
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Granted: 1994-02-15
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Expires: 2012-02-07
Abstract
Abstract A photovoltaic energy conversion device and methods for forming the same with relatively high efficiency, high stability, low cost, low weight, and low toxicity. The device comprises a thin film n/p or n/i/p type, gradient-doped heterojunction which uses compatible, lattice-matched, non-hazardous semiconducting compounds from the I-III-VI 2 (14), I-III-VI-VII (15) and I-VI 3 -VII (16) series, an ohmic contact (13) to the n-layer comprising a group III metal, a transparent ohmic contact (17) to the p-layer, a grid (18), and an antireflection coating (20).
Inventors
- 👤 Shalini Menezes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:03
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F77/00; H10F77/10; H10F77/12; H10F77/126; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y02E10/548; Y10; Y10S; Y10S205/00; Y10S205/915; Y10S438/00; Y10S438/93
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
41 words
A photovoltaic device for converting light to electrical energy with an n/i/p configuration, comprising: a) an n-layer selected from I-III-VI semiconductor compounds; b) an i-layer of resistive semiconductor material comprising I-III-VI-VII elements; and c) a p-layer selected from I-VI-VII semiconductor compounds.
Claim 2
Dependent Claim
41 words
A photovoltaic device for converting light to electrical energy with an n/i/p configuration, comprising: a) an n-layer selected from I-III-VI semiconductor compounds; b) an i-layer of resistive semiconductor material comprising I-III-VI-VII elements; and c) a p-layer selected from I-VI-VII semiconductor compounds.
Claim 3
Dependent Claim
53 words
The device of claim 1 wherein the conductivity or doping is graded within the n/i/p structure so that the outer surface of said n-layer is n + , the outer surface p-layer is p + and the regions adjacent to the i layer on either side are high resistivity n and p, respectively.
Claim 4
Dependent Claim
18 words
The device of claim 1 wherein at least one layer is in the form of a thin film.
Claim 5
Dependent Claim
22 words
The device of claim 1 further including an ohmic contact material to said n-layer which comprises at least one group III element.
Claim 6
Dependent Claim
27 words
The device of claim 1 wherein said n-layer, i-layer, and p-layer include n-CulnSe 2 , Culn X Se Y I Z , and CulSe 3 , respectively.
Claim 7
Dependent Claim
18 words
The device of claim 1 wherein at least one layer is deposited on an ohmically contacted flexible substrate.
Claim 8
Dependent Claim
14 words
A multijunction device of claim 1 used in cascade configuration with other semiconductor materials.
Claim 9
Dependent Claim
27 words
The device of claim 1 wherein said p-layer and said i-layer are synthesized by selenization and iodization of a group I element and of I-III alloys, respectively.
Claim 10
Dependent Claim
39 words
The device of claim 1 where a n-CulnSe 2 /Culn X Se Y I Z /p-CulSe 3 heterojunction is produced by electro chemically converting the surface of n-CulnSe 2 to Culn X Se Y I Z /p-CulSe 3 .
Claim 11
Dependent Claim
19 words
The device of claim 1 wherein at least one layer is produced from a stoichiometric melt of its constituents.
Claim 12
Dependent Claim
19 words
The device of claim 1 where the layers are deposited in a continuous process in an integrated deposition system.
Claim 13
Dependent Claim
30 words
A photovoltaic device for converting light to electrical energy, comprising: a) an n-layer selected from I-III-VI 2 semiconductor compounds, and b) a p-layer selected from I-VI 3 -VII semiconductor compounds.
Claim 14
Dependent Claim
30 words
A photovoltaic device for converting light to electrical energy, comprising: a) an n-layer selected from I-III-VI 2 semiconductor compounds, and b) a p-layer selected from I-VI 3 -VII semiconductor compounds.
Claim 15
Dependent Claim
36 words
The device of claim 12 wherein said n-type layer is gradient doped and the n-type conductivity and the conductivity grading is induced by diffusion of group III metal from the back ohmic contact into the n-layer.
Claim 16
Dependent Claim
14 words
The device of claim 12 wherein at least one component is synthesized by electrodeposition.
Claim 17
Dependent Claim
17 words
The device of claim 12 wherein the constituents of at least one layer are deposited by evaporation.
Claim 18
Dependent Claim
17 words
The device of claim 12 wherein at least one layer is synthesized by a vapor deposition technique.
Claim 19
Dependent Claim
15 words
The device of claim 12 wherein at least one layer is deposited by spray pyrolysis.
Claim 20
Dependent Claim
15 words
The device of claim 12 wherein said n-layer is synthesized by selenization of I-III alloy.
Claim 21
Dependent Claim
23 words
The device of claim 12 where a heterojunction is formed by electrochemically reacting the surface of said n-layer, to produce said p-type layer.
Claim 22
Dependent Claim
27 words
A photovoltaic device comprising: a) an absorber material selected from the I-III-VI 2 semiconductor compounds, and b) a relatively wide bandgap heterojunction partner selected from I-III-VI-VII compounds.
Claim 23
Dependent Claim
27 words
A photovoltaic device comprising: a) an absorber material selected from the I-III-VI 2 semiconductor compounds, and b) a relatively wide bandgap heterojunction partner selected from I-III-VI-VII compounds.
References Cited (Backward Citations)
US4710589A
Cited
US4753684A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-02-14 | 1997-08-16 | 1998-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-14 | 2001-08-16 | 2002-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-14 | 2005-08-16 | 2006-02-15 | $7700.00 | Window Closed / Lapsed |