US5285418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a temperature detection circuit
Assignee: NEC Electronics Corp
•
Filing: 1991-08-30
•
Granted: 1994-02-08
•
Expires: 2011-08-30
Abstract
Abstract A semiconductor device is provided with an automatic voltage switching circuit which applies an internal, reduced power voltage to an internal other than when a burn-in test is performed. The semiconductor device comprises a temperature detection circuit for detecting a predetermined temperature used for the burn-in test and a switch circuit for applying the external power voltage to the internal circuit when the predetermined temperature is detected.
Inventors
- 👤 Takashi Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:05
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/317; G01R31/31701; G11; G11C; G11C29/00; G11C29/02; G11C29/028; G11C29/04; G11C29/50; H; H10; H10D; H10D89/00; H10D89/60; G11C2029/5002; G11C2029/5004
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
175 words
A semiconductor device comprising an internal circuit, an external voltage terminal for receiving an external supply voltage, a voltage reduction circuit having an input end coupled to said external voltage terminal and an output end for generating an internal voltage having a smaller value than said external supply voltage, a temperature detection circuit for generating a detection signal of a first level when an ambient temperature is below a predetermined value and a detection signal of a second level when the ambient temperature is at said predetermined value or more, and a selective switch circuit coupled to said external voltage terminal, said internal circuit, said voltage reduction circuit and said temperature detection circuit for providing a first current path between the output end of said voltage reduction circuit and said internal circuit when said detection signal is at said first level and providing a second current path between said external voltage terminal and said internal circuit to supply said external supply voltage to said internal circuit when said detection signal is at said second level.
Claim 2
Dependent Claim
175 words
A semiconductor device comprising an internal circuit, an external voltage terminal for receiving an external supply voltage, a voltage reduction circuit having an input end coupled to said external voltage terminal and an output end for generating an internal voltage having a smaller value than said external supply voltage, a temperature detection circuit for generating a detection signal of a first level when an ambient temperature is below a predetermined value and a detection signal of a second level when the ambient temperature is at said predetermined value or more, and a selective switch circuit coupled to said external voltage terminal, said internal circuit, said voltage reduction circuit and said temperature detection circuit for providing a first current path between the output end of said voltage reduction circuit and said internal circuit when said detection signal is at said first level and providing a second current path between said external voltage terminal and said internal circuit to supply said external supply voltage to said internal circuit when said detection signal is at said second level.
Claim 3
Dependent Claim
39 words
The semiconductor device according to claim 1, in which said detection circuit includes a series circuit of a resistor made of polycrystalline silicon and a field effect transistor connected between said external voltage terminal and a reference voltage terminal.
Claim 4
Dependent Claim
207 words
A semiconductor device comprising an internal circuit, an external voltage terminal for receiving an external supply voltage, a voltage reduction circuit having an input end coupled to said external voltage terminal and an output end for generating an internal voltage having smaller value than said external supply voltage, a temperature detection circuit for generating a detection signal of a first level when an ambient temperature is below a redetermined value and a detection signal of a second level when the ambient temperature is at said predetermined value or more, and a selective switch circuit coupled to said internal circuit, said voltage reduction circuit and said temperature detection circuit for providing a first current path between the output end of said voltage reduction circuit and said internal circuit when said detection signal is at said first level and providing a second current path between said external voltage terminal and said internal circuit to supply said external supply voltage to said internal circuit when said detection signal is at said second level, said selective switch circuit including a first switch inserted between the output end of said voltage reduction circuit and said internal circuit and a second switch element inserted between said external voltage terminal and said circuit terminal.
Claim 5
Dependent Claim
207 words
A semiconductor device comprising an internal circuit, an external voltage terminal for receiving an external supply voltage, a voltage reduction circuit having an input end coupled to said external voltage terminal and an output end for generating an internal voltage having smaller value than said external supply voltage, a temperature detection circuit for generating a detection signal of a first level when an ambient temperature is below a redetermined value and a detection signal of a second level when the ambient temperature is at said predetermined value or more, and a selective switch circuit coupled to said internal circuit, said voltage reduction circuit and said temperature detection circuit for providing a first current path between the output end of said voltage reduction circuit and said internal circuit when said detection signal is at said first level and providing a second current path between said external voltage terminal and said internal circuit to supply said external supply voltage to said internal circuit when said detection signal is at said second level, said selective switch circuit including a first switch inserted between the output end of said voltage reduction circuit and said internal circuit and a second switch element inserted between said external voltage terminal and said circuit terminal.
Claim 6
Dependent Claim
95 words
The semiconductor device according to claim 3, wherein said temperature detection circuit includes a resistive element coupled between said external voltage terminal and a circuit node, first and second transistors coupled in series between said circuit node and a reference voltage terminal, and a gate circuit having a first input end coupled to said circuit node and a second input end supplied with a chip-select signal and producing said detection signal, said first transistor having a gate coupled to said external voltage terminal and said second transistor having a gate supplied with said chip-select signal.
Claim 7
Dependent Claim
15 words
The semiconductor device according to claim 4, wherein said gate circuit includes a NAND gate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-07 | 2005-08-09 | 2006-02-08 | $7700.00 | Window Closed / Lapsed |