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US5284803A Expired / Lapsed US ⏱️ 0.0 years remaining

Metod of manufacturing a semiconductor body using a carrier wafer and a monocrystalline semiconducting top layer

Assignee: US Philips Corp
•
Filing: 1992-12-16
•
Granted: 1994-02-08
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Expires: 2012-12-16
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Abstract

Abstract A method of manufacturing a semiconductor body (1), whereby a carrier wafer (2) with an optically smooth main surface (3) is provided with a semiconducting top layer (4) in that the main surface (3) is brought into contact with an optically smooth main surface (5) of a monocrystalline semiconductor wafer (6), a permanent bond being formed, after which the semiconductor wafer (6) is made thin by means of a grinding process and a polishing process in that order. The semiconductor wafer (6) is made thin in the polishing process in that the exposed main surface (9) of the carrier wafer (2) is made wear-resistant, and in that then the carrier wafer (2) bonded to the semiconductor wafer (6) is arranged between two plane polishing discs (10) and (11) provided with a polishing liquid, upon which these polishing discs (10, 11) and the exposed main surfaces (8, 9) are moved relative to one another. It is achieved by this that a semiconductor body (1) with a carrier wafer (2) and a top layer (4) can be manufactured in a simple manner suitable for mass production. It is also found that a top layer (4) with smaller layer thickness variations can be manufactured.

Inventors

  • 👤 Jan Haisma
  • 👤 Franciscus J. H. M. van der Kruis

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 18:12
CPC Classifications
H; H10; H10P; H10P52/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; Y; Y10; Y10S; Y10S148/00; Y10S148/012

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 142 words
A method of manufacturing a semiconductor body whereby a carrier wafer having an optically smooth main surface is provided with a semiconducting top layer in that the main surface is brought into contact with an optically smooth main surface of a monocrystalline semiconductor wafer so that a permanent bond is formed, after which the semiconductor wafer is made thin by means of a grinding process followed by a polishing process, characterized in that the semiconductor wafer is made thin in the polishing process in that the exposed surface of the carrier wafer is rendered wear-resistant and in that then the carrier wafer bonded to the semiconductor wafer is arranged between two flat polishing discs provided with a polishing liquid, upon which these polishing discs and the exposed surfaces of the semiconductor wafer and the carrier wafer are moved relative to one another.
Claim 2
Independent Claim 142 words
A method of manufacturing a semiconductor body whereby a carrier wafer having an optically smooth main surface is provided with a semiconducting top layer in that the main surface is brought into contact with an optically smooth main surface of a monocrystalline semiconductor wafer so that a permanent bond is formed, after which the semiconductor wafer is made thin by means of a grinding process followed by a polishing process, characterized in that the semiconductor wafer is made thin in the polishing process in that the exposed surface of the carrier wafer is rendered wear-resistant and in that then the carrier wafer bonded to the semiconductor wafer is arranged between two flat polishing discs provided with a polishing liquid, upon which these polishing discs and the exposed surfaces of the semiconductor wafer and the carrier wafer are moved relative to one another.
Claim 3
Dependent Claim 34 words
A method as claimed in claim 1, characterized in that the exposed surface of the carrier wafer is rendered wear-resistant in that a wear-resistant material is used as the material for the carrier wafer.
Claim 4
Dependent Claim 18 words
A method as claimed in claim 2, characterized in that a ceramic material is used as the material.
Claim 5
Dependent Claim 27 words
A method as claimed in claim 3, characterized in that a material selected from the group consisting of nitrides and carbides is used as the ceramic material.
Claim 6
Dependent Claim 31 words
A method as claimed in claim 1, characterized in that the exposed surface of the carrier wafer is rendered wear-resistant in that the exposed surface is provided with a wear-resistant layer.
Claim 7
Dependent Claim 24 words
A method as claimed in claim 5, characterized in that one of a nitride, carbide, and diamond layer is used as the wear-resistant layer.
Claim 8
Dependent Claim 35 words
A method as claimed in claim 5, in which both the carrier wafer and the semiconductor wafer comprise a silicon wafer, characterized in that aluminium nitride is used as the material for the wear-resistant layer.
Claim 9
Dependent Claim 23 words
A method as claimed in claim 5, characterized in that grooves extending down to the carrier wafer are provided in the wear-resistant layer.
Claim 10
Dependent Claim 39 words
A method as claimed in claim 1, characterized in that the polishing disc facing the exposed surface of the carrier wafer has a lesser polishing action than the polishing disc facing the exposed main surface of the semiconductor wafer.

References Cited (Backward Citations)

US4880684A Cited
EP0337556A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-02-07 1997-08-09 1998-02-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-02-07 2001-08-09 2002-02-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-02-07 2005-08-09 2006-02-08 $7700.00 Window Closed / Lapsed

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