Monolithic infrared detector with pyroelectric material

Claim 2

An infrared monolithic type detector, comprising: a layer of pyroelectric material; a semiconductive substrate wherein the pyroelectric layer comprises a plurality of pyroelectric zones, each pyroelectric zone including a lower electrode located between the pyroelectric layer and the semiconductive substrate; and switching means, for establishing an electric current between each of said lower electrodes and the semiconductive substrate, wherein said semiconductive substrate comprises a CCD multiplexer having one input electrode for each of said pyroelectric zones, each one of said input electrodes being connected to said lower electrode, a polarization diode and a transistor, each input electrode being used to form a potential barrier in said semiconductive substrate.

Claim 3

A process of reading signal charges produced in pyroelectric zones or pixels in an infrared detector, each pyroelectric zone including a lower electrode whose potential varies proportionally to the signal charges produced during a period of exposure to a radiation of the infrared detector, the process comprising the steps of: producing in a semiconductive substrate a potential barrier between a first and a second potential well; imparting to said potential barrier a height proportional to the potential of lower electrode, the depth of first potential well being given by the height of the potential barrier; applying before a period of exposure to a radiation, a reset-to-level voltage to lower electrode; eliminating the application of the reset-to-level voltage and filling the first potential well; and beginning the exposure period; injecting, after the exposure period, an amount of driving charges in the first potential well to divide the amount of driving charge into first and second fractions, with the first fraction representing the signal charge and being stored in first potential well and the second fraction being diverted and stored in second potential well and representing difference between driving charge and first fraction.

Claim 4

A process of reading signal charges produced in pyroelectric zones or pixels in an infrared detector, each pyroelectric zone including a lower electrode whose potential varies proportionally to the signal charges produced during a period of exposure to a radiation of the infrared detector, the process comprising the steps of: producing in a semiconductive substrate a potential barrier between a first and a second potential well; imparting to said potential barrier a height proportional to the potential of lower electrode, the depth of first potential well being given by the height of the potential barrier; applying before a period of exposure to a radiation, a reset-to-level voltage to lower electrode; eliminating the application of the reset-to-level voltage and filling the first potential well; and beginning the exposure period; injecting, after the exposure period, an amount of driving charges in the first potential well to divide the amount of driving charge into first and second fractions, with the first fraction representing the signal charge and being stored in first potential well and the second fraction being diverted and stored in second potential well and representing difference between driving charge and first fraction.

Claim 5

A process according to claim 2, wherein it consists in transferring to a read circuit second fraction contained in second potential well.

Claim 6

A process according to claim 3, wherein the amount of driving charges has a known value.

Claim 7

A process according to any one of claims 2, 3 or 4, further comprising the steps of: allowing pyroelectric zones to cool to allow them to regain the same temperature as before the exposure period, so that first charge fraction is diverted into second potential well, and then; transferring the first charge fraction to a read circuit.

Claim 8

A process according to any one of claims 2, 3 or 4, further comprising after the exposure period, injecting in fist potential well a second amount of driving charges, and then, after pyroelectric zones have returned to their temperature of before the exposure period, transferring to a read circuit the charges contained in second potential well so that the charges thus transferred consist of an amount of driving charges plus first charge fraction.

Claim 9

An infrared monolithic type detector, comprising: a layer of pyroelectric material; a semiconductive substrate wherein the pyroelectric layer comprises a plurality of pyroelectric zones, each pyroelectric zone including a lower electrode located between the pyroelectric layer and the semiconductive substrate, said detector further comprising switching means, for establishing an electric current between each said lower electrode and the semiconductive substrate, said switching means including a polarization diode on said semiconductive substrate for controlling the flow of said electric current between the semiconductive substrate and lower electrode.

Claim 10

An infrared monolithic type detector, comprising: a layer of pyroelectric material; a semiconductive substrate wherein the pyroelectric layer comprises a plurality of pyroelectric zones, each pyroelectric zone including a lower electrode located between the pyroelectric layer and the semiconductive substrate, said detector further comprising switching means, for establishing an electric current between each said lower electrode and the semiconductive substrate, said switching means including a polarization diode on said semiconductive substrate for controlling the flow of said electric current between the semiconductive substrate and lower electrode.

Claim 11

The infrared monolithic type detector according to claim 7, wherein said polarization diode function to control a polarization state of said pyroelectric layer.

Claim 12

The infrared monolithic type detector according to claim 7, wherein said polarization diode is formed in the semiconductor substrate and includes an implant of an element exhibiting a conductivity type opposite that of the semiconductive substrate.

Claim 13

The infrared monolithic type detector according to claim 9, wherein said polarization diode is connected to an input electrode of an intermediate transfer circuit and also to a transistor enabling the application of a reset voltage to each lower electrode.

Claim 14

The infrared monolithic type detector according to claim 10, wherein said implant constitutes a cathode electrode of said polarization diode, and wherein said electric current flows between the semiconductive substrate and the lower electrode when said semiconductive substrate is set at a higher potential than the lower electrode.

Claim 15

The infrared monolithic type detector according to claim 11, wherein the cathode electrode of said polarization diode and a drain electrode of said transistor are electrically connected at a common point.

Claim 16

The infrared monolithic type detector according to claim 12, wherein said polarization diode is in a blocked state if said common point is at a voltage potential greater than or equal to the potential of said semiconductive substrate.

Claim 17

The infrared monolithic type detector according to claim 7, further comprising a charge evacuation diode connected to said polarization diode through a control electrode.