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US5283437A Expired / Lapsed US ⏱️ 0.0 years remaining

Pneumatically and electrostatically driven scanning tunneling microscope

Assignee: International Business Machines Corp
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Filing: 1993-02-17
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Granted: 1994-02-01
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Expires: 2013-02-17
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Abstract

Abstract A scanning tunneling microscope is disclosed with the probe tip formed as an integral part of a membrane. A counter-electrode is formed on the membrane and four electrodes are provided spaced apart from the counter-electrode. The tip is scanned by means of these electrodes. Coarse positioning of the tip along the Z axis is done by applying pressure or vacuum to the membrane. Also disclosed is the method of making the scanning tunneling microscope.

Inventors

  • 👤 Johann Greschner
  • 👤 Martin Nonnenmacher
  • 👤 Olaf Wolter

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 12:33
CPC Classifications
G; G01; G01Q; G01Q60/00; G01Q60/10; G01Q60/16; B; B82; B82Y; B82Y35/00; G01Q10/00; G01Q10/04; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/86; Y10S977/861; Y10S977/871; Y10S977/872; Y10S977/875

Claims Analysis

Total Claims: 23
Claim 1
Independent Claim 110 words
A scanning tunneling microscope comprising at least one electron-emitting tip maintained at an essentially constant distance along a Z-axis from a sample surface, an XY-drive for scanning said tip in a matrix fashion across said sample surface, means for controlling said tunnel current to maintain said distance essentially constant, characterized in that said XY-drive consists of at least four electrodes spaced from a counter-electrode; said four electrodes being upper electrodes arranged on a member, or lower electrodes arranged on substrate; said counter-electrode being connected to a membrane; and said electron-emitting tip being capable of moving along the Z-axis normal to the sample surface forming an integral part of said membrane.
Claim 2
Dependent Claim 110 words
A scanning tunneling microscope comprising at least one electron-emitting tip maintained at an essentially constant distance along a Z-axis from a sample surface, an XY-drive for scanning said tip in a matrix fashion across said sample surface, means for controlling said tunnel current to maintain said distance essentially constant, characterized in that said XY-drive consists of at least four electrodes spaced from a counter-electrode; said four electrodes being upper electrodes arranged on a member, or lower electrodes arranged on substrate; said counter-electrode being connected to a membrane; and said electron-emitting tip being capable of moving along the Z-axis normal to the sample surface forming an integral part of said membrane.
Claim 3
Dependent Claim 21 words
The scanning tunneling microscope of claim 1, characterized in that said STM is fabricated by micromachining using integrated circuit processing steps.
Claim 4
Dependent Claim 19 words
The scanning tunneling microscope of claim 2, characterized in that said STM is fabricated by a planar batch technique.
Claim 5
Dependent Claim 58 words
The scanning tunneling microscope of claim 1, characterized in that said membrane consists of a dielectric material, and that said tip forming an integral part of said membrane is provided with an electrically conductive material and connected to individual electrodes to which voltage may be applied for moving said tip along the Z-axis normal to the sample surface.
Claim 6
Dependent Claim 25 words
The scanning tunneling microscope of claim 4, characterized in that said membrane consists of silicon carbide or silicon nitride, and said tip coating is platinum.
Claim 7
Dependent Claim 27 words
The scanning tunneling microscope of claim 1, characterized in that said member is a perforated glass block which forms part of a pressure or vacuum generating chamber.
Claim 8
Dependent Claim 61 words
The scanning tunneling microscope of claim 1, characterized in that for coarse approach of the membrane and integral tip along the Z-axis the pressure on said membrane is varied, and that for fine approach of the membrane and integral tip a voltage Uz is applied to a Z-electrode, the distance between tip and sample being controlled as a function of Uz.
Claim 9
Dependent Claim 35 words
The scanning tunneling microscope of claim 1, characterized in that the semiconductor substrate includes electronic devices for the current supply of the distance control of the tip and for processing the signals resulting from scanning.
Claim 10
Independent Claim 224 words
A method of making a scanning tunneling microscope using pneumatic and electrostatic control of tip motion, comprising the following steps: a) depositing masking layers on either side of a semiconductor substrate; etching a pit of several μm depth into the front masking layer and into the substrate in a size which corresponds to the future membrane size; b) removing said front side masking layer; depositing a resistent masking layer on said etched pit; c) providing an opening in a layer in the center of said pit; etching a hole through the substrate; d) removing the remaining masking layer; and covering the front side of the substrate including said hole with a tensile stressed film; e) opening said back side masking layer; thinning down the substrate to expose the future membrane and tip; applying a metal layer to said tensile stressed film on the front side and patterning a first electrode so as to extend over said pit; f) applying a metal layer to a member and patterning second electrodes; and g) bonding said member with second electrodes to the substrate frame with the second electrodes being positioned above the first electrode on the membrane; and removing the remaining mask from the back side of substrate; thinning the substrate frame by etching; and applying a metal coating on the tip and a part of substrate.
Claim 11
Independent Claim 224 words
A method of making a scanning tunneling microscope using pneumatic and electrostatic control of tip motion, comprising the following steps: a) depositing masking layers on either side of a semiconductor substrate; etching a pit of several μm depth into the front masking layer and into the substrate in a size which corresponds to the future membrane size; b) removing said front side masking layer; depositing a resistent masking layer on said etched pit; c) providing an opening in a layer in the center of said pit; etching a hole through the substrate; d) removing the remaining masking layer; and covering the front side of the substrate including said hole with a tensile stressed film; e) opening said back side masking layer; thinning down the substrate to expose the future membrane and tip; applying a metal layer to said tensile stressed film on the front side and patterning a first electrode so as to extend over said pit; f) applying a metal layer to a member and patterning second electrodes; and g) bonding said member with second electrodes to the substrate frame with the second electrodes being positioned above the first electrode on the membrane; and removing the remaining mask from the back side of substrate; thinning the substrate frame by etching; and applying a metal coating on the tip and a part of substrate.
Claim 12
Dependent Claim 28 words
The method of claim 9 wherein step a) of depositing masking layer comprises forming layers of silicon dioxide or silicon nitride on either side of a silicon substrate.
Claim 13
Dependent Claim 20 words
The method of claim 9 wherein step b) of depositing a resistent mask material comprises depositing silicon dioxide or aluminum.
Claim 14
Dependent Claim 37 words
The method of claim 9 wherein step d) of covering the front side of the substrate including said hole with a tensile stressed film comprises depositing silicon carbide or silicon nitride by plasma enhanced chemical vapor deposition.
Claim 15
Dependent Claim 23 words
The method of claim 9 wherein the etching steps of the masking layers comprise wet-etching steps using buffered hydrofluoric acid for silicon dioxide.
Claim 16
Dependent Claim 31 words
The method of claim 9 wherein the etching steps of the silicon substrate comprise wet-etching using an approximately 37.5 percent by weight aqueous KOH or dry-etching using chlorine or bromine chemistry.
Claim 17
Dependent Claim 24 words
The method of claim 9 wherein the depositing and patterning of first and second electrodes comprise vapor depositing a metal, using an aperture mask.
Claim 18
Independent Claim 209 words
A method of making a scanning tunneling microscope using pneumatic and electrostatic control of tip motion, comprising the following steps: a) applying a metal layer to a substrate and patterning first electrodes; and applying a dielectric layer to the surface of electrodes overlapping said electrodes; b) applying a metal layer to said dielectric layer and patterning to form an annular conductor which covers approximately the same area as said first electrodes and forms the second electrode; depositing a dielectric layer on top of said annular conductor to form a generally circular sandwich; c) providing an opening in the center of the generally circular sandwich and etching a hole through the substrate; d) covering the circular sandwich including the hole with tunnel contact material; applying dielectric layer to the tunnel contact material layer and to the entire structure; e) removing the substrate material surrounding the tip by etching using a structured oxide mask; thinning the substrate by etching; and etching off the dielectric layer so as to provide clearance space for the sandwich, comprising the membrane, tunnel contact layer with a tip as an integral part of said layers, a dielectric layer, and an annular conductor, for moving along the X, Y, and Z-axes upon the application of electrical fields.
Claim 19
Independent Claim 209 words
A method of making a scanning tunneling microscope using pneumatic and electrostatic control of tip motion, comprising the following steps: a) applying a metal layer to a substrate and patterning first electrodes; and applying a dielectric layer to the surface of electrodes overlapping said electrodes; b) applying a metal layer to said dielectric layer and patterning to form an annular conductor which covers approximately the same area as said first electrodes and forms the second electrode; depositing a dielectric layer on top of said annular conductor to form a generally circular sandwich; c) providing an opening in the center of the generally circular sandwich and etching a hole through the substrate; d) covering the circular sandwich including the hole with tunnel contact material; applying dielectric layer to the tunnel contact material layer and to the entire structure; e) removing the substrate material surrounding the tip by etching using a structured oxide mask; thinning the substrate by etching; and etching off the dielectric layer so as to provide clearance space for the sandwich, comprising the membrane, tunnel contact layer with a tip as an integral part of said layers, a dielectric layer, and an annular conductor, for moving along the X, Y, and Z-axes upon the application of electrical fields.
Claim 20
Dependent Claim 37 words
The method of claim 16 wherein step a) of depositing the dielectric layer comprises depositing silicon dioxide which acts as a spacer material and which is removed by etching with buffered hydrofluoric acid at a later stage.
Claim 21
Dependent Claim 35 words
The method of claim 16 wherein steps a, b, and d of depositing and patterning of first electrodes, of annular conductor, and of tunnel contact material comprise vapor depositing a metal, using an aperture mask.
Claim 22
Dependent Claim 30 words
The method of claim 16, wherein the step of depositing dielectric layer in steps b and d comprises depositing silicon carbide or silicon nitride by plasma enhanced chemical vapor deposition.
Claim 23
Dependent Claim 44 words
The method of claim 16 further comprising: providing a glass block on top of the scanning tunneling microscope, leaving a cavity between said glass block and the membrane to allow pneumatic coarse approach of the membrane/tip assembly along Z-axis normal to the sample surface.

References Cited (Backward Citations)

EP0194323A1 Cited
US4912822A Cited
DE3929735A1 Cited
US4916002A Cited
EP0383182A2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-31 1997-08-02 1998-02-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-31 2001-08-02 2002-02-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-31 2005-08-02 2006-02-01 $7700.00 Window Closed / Lapsed

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