US5281839A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a short gate length
Assignee: Motorola Solutions Inc
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Filing: 1993-04-23
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Granted: 1994-01-25
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Expires: 2013-04-23
Abstract
Abstract A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device having a short gate length is fabricated.
Inventors
- 👤 Bertrand F. Cambou
- 👤 Robert B. Davies
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:25
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/80; H10D30/87; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/0126
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
202 words
A semiconductor device, comprising: a semiconductor material, having a top surface and a bottom surface; a first portion of a channel region of a first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material; a second portion of the channel region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material, wherein the second portion of the channel region is continuous with the first portion of the channel region and extends further into the semiconductor material from a portion of the top surface than the first portion of the channel region; a dielectric layer disposed on a first portion of the top surface over a portion of the first portion of the channel region and disposed a predetermined distance away from the second portion of the channel region; a gate layer disposed on the top surface of the semiconductor material over a portion of the first and the second portions of the channel region and disposed on a portion of the dielectric layer; and a spacer disposed adjacent the gate layer on a portion of the semiconductor material and on a portion of the dielectric layer.
Claim 2
Dependent Claim
202 words
A semiconductor device, comprising: a semiconductor material, having a top surface and a bottom surface; a first portion of a channel region of a first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material; a second portion of the channel region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material, wherein the second portion of the channel region is continuous with the first portion of the channel region and extends further into the semiconductor material from a portion of the top surface than the first portion of the channel region; a dielectric layer disposed on a first portion of the top surface over a portion of the first portion of the channel region and disposed a predetermined distance away from the second portion of the channel region; a gate layer disposed on the top surface of the semiconductor material over a portion of the first and the second portions of the channel region and disposed on a portion of the dielectric layer; and a spacer disposed adjacent the gate layer on a portion of the semiconductor material and on a portion of the dielectric layer.
Claim 3
Dependent Claim
74 words
The semiconductor device of claim 1 further comprising a first source/drain region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material and overlapping a portion of the first portion of the channel region and a second source/drain region formed in the semiconductor material extending from the top surface into the semiconductor material and overlapping a portion of the second portion of the channel region.
Claim 4
Dependent Claim
38 words
The semiconductor device of claim 1 further comprising a region of a second conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material further than the second portion of the channel region.
Claim 5
Dependent Claim
18 words
The semiconductor device of claim 1 wherein the semiconductor material is comprised of a semi-insulating gallium arsenide substrate.
Claim 6
Dependent Claim
95 words
The semiconductor device of claim 1 wherein the top surface of the semiconductor material has a first portion and a second portion and wherein the second portion of the top surface is at a lower level than the first portion of the top surface and further wherein the first portion of the channel region is formed in the semiconductor material in the first portion of the top surface and wherein the second portion of the channel region extends into the semiconductor material closer to the bottom surface than the first portion of the channel region.
Claim 7
Dependent Claim
211 words
A semiconductor device, comprising: a semiconductor material, having a top surface; a first portion of a channel region of a first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material; a second portion of the channel region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material, wherein the second portion of the channel region is continuous with the first portion of the channel region and which is not substantially depleted during operation of the semiconductor device; a dielectric layer disposed on a first portion of the top surface over a portion of the first portion of the channel region and disposed a predetermined distance away from the second portion of the channel region; a first spacer disposed on the first portion of the top surface adjacent the dielectric layer; a gate layer disposed on a portion of the dielectric layer and disposed on a second portion of the top surface over a portion of the first and the second portions of the channel region and disposed on the first spacer; and a second spacer disposed adjacent the gate layer on a portion of the semiconductor material and on a portion of the dielectric layer.
Claim 8
Dependent Claim
211 words
A semiconductor device, comprising: a semiconductor material, having a top surface; a first portion of a channel region of a first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material; a second portion of the channel region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material, wherein the second portion of the channel region is continuous with the first portion of the channel region and which is not substantially depleted during operation of the semiconductor device; a dielectric layer disposed on a first portion of the top surface over a portion of the first portion of the channel region and disposed a predetermined distance away from the second portion of the channel region; a first spacer disposed on the first portion of the top surface adjacent the dielectric layer; a gate layer disposed on a portion of the dielectric layer and disposed on a second portion of the top surface over a portion of the first and the second portions of the channel region and disposed on the first spacer; and a second spacer disposed adjacent the gate layer on a portion of the semiconductor material and on a portion of the dielectric layer.
Claim 9
Dependent Claim
74 words
The semiconductor device of claim 6 further comprising a first source/drain region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material and overlapping a portion of the first portion of the channel region and a second source/drain region formed in the semiconductor material extending from the top surface into the semiconductor material and overlapping a portion of the second portion of the channel region.
Claim 10
Dependent Claim
17 words
The semiconductor device of claim 6 wherein the dielectric layer is comprised of a silicon nitride layer.
Claim 11
Dependent Claim
38 words
The semiconductor device of claim 6 further comprising a region of a second conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material further than the second portion of the channel region.
Claim 12
Dependent Claim
18 words
The semiconductor device of claim 6 wherein the semiconductor material is comprised of a semi-insulating gallium arsenide substrate.
Claim 13
Dependent Claim
99 words
The semiconductor device of claim 6 wherein the top surface of the semiconductor material has a first portion and a second portion and wherein the second portion of the top surface is at a lower level than the first portion of the top surface and further wherein the first portion of the channel region is formed in the semiconductor material in the first portion of the top surface and wherein the second portion of the channel region extends further into the semiconductor material than the first portion of the channel region from the first portion of the top surface.
Claim 14
Dependent Claim
279 words
A semiconductor device, comprising: a semiconductor material, having a bottom surface, a first top surface and a second top surface, wherein the second top surface is at a lower level than the first top surface; a first portion of a channel region of a first conductivity type formed in the semiconductor material extending from the first top surface into the semiconductor material; a second portion of the channel region of the first conductivity type formed in the semiconductor material extending from the second top surface into the semiconductor material and extending from a portion of the first top surface into the semiconductor material, wherein the second portion of the channel region is continuous with the first portion of the channel region and which is not substantially depleted during operation of the semiconductor device, and wherein the second portion of the channel region extends into the semiconductor material closer to the bottom surface than the first portion of the channel region; a dielectric layer disposed on a first portion of the first top surface over a portion of the first portion of the channel region and disposed a predetermined distance away from the second portion of the channel region; a gate layer disposed on a portion of the dielectric layer and disposed on a second portion of the first top surface over a portion of the first and the second portions of the channel region and disposed on a first portion of the second top surface over a portion of the second portion of the channel region; and a spacer disposed adjacent the gate layer on a portion of the semiconductor material and on a portion of the dielectric layer.
Claim 15
Dependent Claim
279 words
A semiconductor device, comprising: a semiconductor material, having a bottom surface, a first top surface and a second top surface, wherein the second top surface is at a lower level than the first top surface; a first portion of a channel region of a first conductivity type formed in the semiconductor material extending from the first top surface into the semiconductor material; a second portion of the channel region of the first conductivity type formed in the semiconductor material extending from the second top surface into the semiconductor material and extending from a portion of the first top surface into the semiconductor material, wherein the second portion of the channel region is continuous with the first portion of the channel region and which is not substantially depleted during operation of the semiconductor device, and wherein the second portion of the channel region extends into the semiconductor material closer to the bottom surface than the first portion of the channel region; a dielectric layer disposed on a first portion of the first top surface over a portion of the first portion of the channel region and disposed a predetermined distance away from the second portion of the channel region; a gate layer disposed on a portion of the dielectric layer and disposed on a second portion of the first top surface over a portion of the first and the second portions of the channel region and disposed on a first portion of the second top surface over a portion of the second portion of the channel region; and a spacer disposed adjacent the gate layer on a portion of the semiconductor material and on a portion of the dielectric layer.
Claim 16
Dependent Claim
74 words
The semiconductor device of claim 12 further comprising a first source/drain region of the first conductivity type formed in the semiconductor material extending from the top surface into the semiconductor material and overlapping a portion of the first portion of the channel region and a second source/drain region formed in the semiconductor material extending from the top surface into the semiconductor material and overlapping a portion of the second portion of the channel region.
Claim 17
Dependent Claim
18 words
The semiconductor device of claim 12 wherein the first dielectric layer is comprised of a silicon nitride layer.
Claim 18
Dependent Claim
42 words
The semiconductor device of claim 12 further comprising a region of a second conductivity type formed in the semiconductor material extending from the first and the second top surface into the semiconductor material further than the second portion of the channel region.
Claim 19
Dependent Claim
18 words
The semiconductor device of claim 12 wherein the semiconductor material is comprised of a semi-insulating gallium arsenide substrate.
References Cited (Backward Citations)
US4994872A
Cited
FR2466862A1
Cited
EP0030178A2
Cited
JPS59225571A
Cited
JPS6112079A
Cited
JPS6189674A
Cited
JPS6190467A
Cited
JPS6387773A
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JPH02205325A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-24 | 2005-07-26 | 2006-01-25 | $7700.00 | Window Closed / Lapsed |