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US5281831A
Expired / Lapsed
US
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Optical semiconductor device
Assignee: Toshiba Corp
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Filing: 1991-10-30
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Granted: 1994-01-25
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Expires: 2011-10-30
Abstract
Abstract AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.
Inventors
- 👤 Tsutomu Uemoto
- 👤 Atsushi Kamata
- 👤 Hidetoshi Fujimoto
- 👤 Hiroshi Mitsuhashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H01S5/3027; H01S5/3031; H01S5/3036
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
159 words
An optical semiconductor device wherein dopant molecules comprising a group II atoms and a group VI atom are added to a semiconductor light emitting layer so as to form associations, each of which associations correspond to each of the dopant molecules added and consists of the group II atoms and the group VI atom located on crystal lattice points in close proximity to each other in the light emitting layer, wherein the electron negativity of said associations is different from that of semiconductor forming the light emitting layer such that each association constitutes an isoelectronic trap and forms an exciton in the light emitting layer, and wherein said group II atoms and said group VI atom in said dopant molecules are chemically bonded to each other, and further wherein the number of the II and VI group atoms of said dopant molecules in said semiconductor light emitting layer is 1×10 16 /cm 3 to 1×10 20 /cm 3 .
Claim 2
Dependent Claim
159 words
An optical semiconductor device wherein dopant molecules comprising a group II atoms and a group VI atom are added to a semiconductor light emitting layer so as to form associations, each of which associations correspond to each of the dopant molecules added and consists of the group II atoms and the group VI atom located on crystal lattice points in close proximity to each other in the light emitting layer, wherein the electron negativity of said associations is different from that of semiconductor forming the light emitting layer such that each association constitutes an isoelectronic trap and forms an exciton in the light emitting layer, and wherein said group II atoms and said group VI atom in said dopant molecules are chemically bonded to each other, and further wherein the number of the II and VI group atoms of said dopant molecules in said semiconductor light emitting layer is 1×10 16 /cm 3 to 1×10 20 /cm 3 .
Claim 3
Dependent Claim
16 words
The device according to claim 1, wherein said semiconductor light emitting layer is a compound semiconductor.
Claim 4
Dependent Claim
21 words
The device according of claim 2, wherein said semiconductor light emitting layer is formed from two kinds of group IV atoms.
Claim 5
Dependent Claim
16 words
The device according to claim 3, wherein said semiconductor light emitting layer is formed of SiC.
Claim 6
Dependent Claim
32 words
The device according to claim 4, wherein said associations are selected from the group of II-VI atom pairs consisting of BeO, MgO, MgS, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, and Cdte.
Claim 7
Dependent Claim
22 words
The device according to claim 1, wherein said semiconductor light emitting layer is formed of a single kind of group IV atom.
Claim 8
Dependent Claim
16 words
The device according to claim 6, wherein said semiconductor light emitting layer is formed of diamond.
Claim 9
Dependent Claim
32 words
The device according to claim 7, wherein said associations are selected from the group of II-VI atom pairs consisting of BeO, MgO, MgS, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, and CdTe.
Claim 10
Dependent Claim
16 words
The device according to claim 2, wherein said semiconductor light emitting layer is formed of BN.
Claim 11
Dependent Claim
13 words
The device according to claim 9, wherein said dopant is formed of CdSe.
Claim 12
Dependent Claim
160 words
An optical semiconductor device wherein dopant molecules comprising a group III atoms and a group V atom are added to a semiconductor light emitting layer so as to form associations, each of which associations correspond to each of the dopant molecules added and consists of the group III atom and the group V atom located on crystal lattice points in close proximity to each other in the light emitting layer, wherein the electron engativity of said associations is different from that of semiconductor forming the light emitting layer such that each association constitutes an isoelectronic trap and forms an exciton in the light emitting layer, and wherein said group III atom and said group V atom in said dopant molecules are chemically bonded to each other, and further wherein the number of the III and V group atoms of said dopant molecules in said semiconductor light emitting layer is 1×10 16 /cm 3 l to 1×10 20 /cm 3 .
Claim 13
Dependent Claim
160 words
An optical semiconductor device wherein dopant molecules comprising a group III atoms and a group V atom are added to a semiconductor light emitting layer so as to form associations, each of which associations correspond to each of the dopant molecules added and consists of the group III atom and the group V atom located on crystal lattice points in close proximity to each other in the light emitting layer, wherein the electron engativity of said associations is different from that of semiconductor forming the light emitting layer such that each association constitutes an isoelectronic trap and forms an exciton in the light emitting layer, and wherein said group III atom and said group V atom in said dopant molecules are chemically bonded to each other, and further wherein the number of the III and V group atoms of said dopant molecules in said semiconductor light emitting layer is 1×10 16 /cm 3 l to 1×10 20 /cm 3 .
Claim 14
Dependent Claim
16 words
The device according to claim 1, wherein said semiconductor light emitting layer is a compound semiconductor.
Claim 15
Dependent Claim
21 words
The device according to claim 12, wherein said semiconductor light emitting layer is formed of two kinds of group IV atoms.
Claim 16
Dependent Claim
16 words
The device according to claim 13, wherein said semiconductor light emitting layer is formed of SiC.
Claim 17
Dependent Claim
30 words
The device according to claim 13, wherein said associations are selected from the group of III-V atom pairs consisting of BN, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, and GaSb.
Claim 18
Dependent Claim
22 words
The device according to claim 11, wherein said semiconductor light emitting layer is formed of a single kind of group IV atom.
Claim 19
Dependent Claim
16 words
The device according to claim 16, wherein said semiconductor light emitting layer is formed of diamond.
Claim 20
Dependent Claim
30 words
The device according to claim 17, wherein said associations are selected from the group of III-V atom pairs consisting of BN, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, and GaSb.
Claim 21
Dependent Claim
36 words
The device according to claim 1, wherein said group II atom and said group VI atom of said associations are located on crystal lattice points which are adjacent to one another in the light emitting layer.
Claim 22
Dependent Claim
36 words
The device according to claim 11, wherein said group III atom and said group V atom of said associations are located on crystal lattice points which are adjacent to one another in the light emitting layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-24 | 2005-07-26 | 2006-01-25 | $7700.00 | Window Closed / Lapsed |