US5280184A
Expired / Lapsed
US
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Three dimensional integrated circuits with lift-off
Assignee: Georgia Tech Research Corp
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Filing: 1992-04-08
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Granted: 1994-01-18
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Expires: 2012-04-08
Abstract
Abstract Three dimensional communication within an integrated circuit occurs via electromagnetic communication between emitters and detectors situated throughout the integrated circuit. The emitters and detectors can be produced in a diode or laser configuration. The emitters and detectors can be fabricated via novel lift-off and alignable deposition processes. Integrated circuit layers, including silicon and gallium arsenide, are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.
Inventors
- 👤 Nan M. Jokerst
- 👤 Martin A. Brooke
- 👤 Mark G. Allen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:56
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/011; H10F39/021; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W90/00; H10W90/20; H10W90/293; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0215; H01S5/0217; H01S5/10; H01S5/18; H01S5/183; H10P72/00; H10P72/70; H10P72/74; H10P72/7434
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
45 words
A monolithic multilayered integrated circuit, comprising a thin film semiconductor emitter means for sending electromagnetic signals encoded with information to a said monolithic multilayered integrated circuit, said detector means being formed separately from said monolithic multilayered integrated circuit and being subsequently deposited in said circuit.
Claim 2
Dependent Claim
45 words
A monolithic multilayered integrated circuit, comprising a thin film semiconductor emitter means for sending electromagnetic signals encoded with information to a said monolithic multilayered integrated circuit, said detector means being formed separately from said monolithic multilayered integrated circuit and being subsequently deposited in said circuit.
Claim 3
Dependent Claim
72 words
A monolithic multilayered integrated circuit, comprising: a first substrate having a first and a second side; an emitter situated to send electromagnetic signals towards the direction of said first side, said emitter being formed on a growth substrate which is separate from said integrated circuit and subsequently deposited onto a host substrate in said integrated circuit; and a detector situated to receive said electromagnetic signals from the direction of said second side.
Claim 4
Dependent Claim
72 words
A monolithic multilayered integrated circuit, comprising: a first substrate having a first and a second side; an emitter situated to send electromagnetic signals towards the direction of said first side, said emitter being formed on a growth substrate which is separate from said integrated circuit and subsequently deposited onto a host substrate in said integrated circuit; and a detector situated to receive said electromagnetic signals from the direction of said second side.
Claim 5
Dependent Claim
12 words
The circuit of claim 2, wherein said emitter comprises an emitting junction.
Claim 6
Dependent Claim
12 words
The circuit of claim 2, wherein said detector comprises a detecting junction.
Claim 7
Dependent Claim
11 words
The circuit of claim 2, wherein said host substrate comprises Si.
Claim 8
Dependent Claim
20 words
The circuit of claim 2, wherein said emitter comprises a thin film semiconductor having a thickness less than 20 micrometers.
Claim 9
Dependent Claim
20 words
The circuit of claim 2, wherein said detector comprises a thin film device having a thickness less than 20 micrometers.
Claim 10
Dependent Claim
37 words
The circuit of claim 2, further comprising a second monolithic multilayered integrated circuit having a second detector and wherein said emitter in said first circuit communicates with said second detector in said second monolithic multilayered integrated circuit.
Claim 11
Dependent Claim
22 words
The circuit of claim 2, wherein said emitter comprises a thin film single crystal semiconductor having a thickness less than 20 micrometers.
Claim 12
Dependent Claim
30 words
The circuit of claim 3, wherein said emitter comprises In x Ga 1-x As y P 1-y semiconductor material where 0<x<1 and 0<y<1 and wherein said host substrate comprises silicon.
Claim 13
Dependent Claim
30 words
The circuit of claim 4, wherein said detector comprises In x Ga 1-x As y P 1-y semiconductor material where 0<x<1 and 0<y<1 and wherein said host substrate comprises silicon.
Claim 14
Dependent Claim
28 words
The circuit of claim 10, wherein said In x Ga 1-x As y P -y semiconductor material is coupled to metal so as to create said emitting junction.
Claim 15
Dependent Claim
28 words
The circuit of claim 11, wherein said In x Ga 1-x As y P 1-y semiconductor material is coupled to metal so as to create said detecting junction.
Claim 16
Dependent Claim
69 words
A monolithic multilayered integrated circuit, comprising: a first layer having a top and a bottom and an electrical connection therethrough to connect said top to a substrate at said bottom; and a thin film semiconductor layer situated at said top in connection with said electrical connection, said thin film semiconductor layer being formed on a growth substrate separately from said first layer and subsequently deposited onto said first layer.
Claim 17
Dependent Claim
69 words
A monolithic multilayered integrated circuit, comprising: a first layer having a top and a bottom and an electrical connection therethrough to connect said top to a substrate at said bottom; and a thin film semiconductor layer situated at said top in connection with said electrical connection, said thin film semiconductor layer being formed on a growth substrate separately from said first layer and subsequently deposited onto said first layer.
Claim 18
Dependent Claim
15 words
The circuit of claim 14, wherein said thin film semiconductor layer comprises a single crystal.
Claim 19
Dependent Claim
18 words
The circuit of claim 14, wherein said thin film semiconductor layer measures less than 20 micrometers in thickness.
Claim 20
Dependent Claim
11 words
The circuit of claim 14, wherein said electrical connection comprises metal.
Claim 21
Dependent Claim
26 words
The circuit of claim 14, wherein said thin film semiconductor layer comprises In x Ga 1-x As y P 1-y semiconductor material where 0<x<1 and 0<y<1.
Claim 22
Dependent Claim
11 words
The circuit of claim 14, wherein said first layer comprises polyimide.
Claim 23
Dependent Claim
109 words
An optical detector for an integrated circuit in an imaging system, comprising: a first layer having a top and a bottom and a metal electrical connection therethrough to a substrate with processing circuitry configured to process electrical signals; and a thin film semiconductor layer situated at said top and connected to said metal electrical connection, said thin film semiconductor layer in combination with said metal electrical connection configured to receive said optical signals from an exterior source and convert said optical signals into electrical signals, said thin film semiconductor layer being formed on a growth substrate independently of said first layer and being subsequently deposited onto said first layer.
Claim 24
Dependent Claim
109 words
An optical detector for an integrated circuit in an imaging system, comprising: a first layer having a top and a bottom and a metal electrical connection therethrough to a substrate with processing circuitry configured to process electrical signals; and a thin film semiconductor layer situated at said top and connected to said metal electrical connection, said thin film semiconductor layer in combination with said metal electrical connection configured to receive said optical signals from an exterior source and convert said optical signals into electrical signals, said thin film semiconductor layer being formed on a growth substrate independently of said first layer and being subsequently deposited onto said first layer.
Claim 25
Dependent Claim
51 words
The circuit of claim 1, further comprising a monolithically integrated thin film semiconductor detector means and wherein said electromagnetic signals pass through a substrate to said thin film detector means, said thin film detector means being formed separately from said monolithic multilayered integrated circuit and being subsequently deposited in said circuit.
Claim 26
Dependent Claim
50 words
A monolithic multilayered integrated circuit comprising a thin film semiconductor detector means for receiving electromagnetic signals encoded with information form an emitter means situated remote from said monolithic multilayered integrated circuit, said detector means being formed separately from said monolithic multilayered integrated circuit and being subsequently deposited in said circuit.
Claim 27
Dependent Claim
50 words
A monolithic multilayered integrated circuit comprising a thin film semiconductor detector means for receiving electromagnetic signals encoded with information form an emitter means situated remote from said monolithic multilayered integrated circuit, said detector means being formed separately from said monolithic multilayered integrated circuit and being subsequently deposited in said circuit.
Claim 28
Dependent Claim
72 words
A monolithic multilayered integrated circuit, comprising: a first substrate having a first and a second side; an emitter situated to send electromagnetic signals towards the direction of said first side; and a detector situated to receive said electromagnetic signals from the direction of said second side, said detector being formed on a growth substrate which is separate from said integrated circuit and subsequently deposited on a host substrate in said integrated circuit.
Claim 29
Dependent Claim
72 words
A monolithic multilayered integrated circuit, comprising: a first substrate having a first and a second side; an emitter situated to send electromagnetic signals towards the direction of said first side; and a detector situated to receive said electromagnetic signals from the direction of said second side, said detector being formed on a growth substrate which is separate from said integrated circuit and subsequently deposited on a host substrate in said integrated circuit.
Claim 30
Dependent Claim
12 words
The circuit of claim 23, wherein said detector comprises a detecting junction.
Claim 31
Dependent Claim
10 words
The circuit of claim 23, wherein said substrate comprised silicon.
Claim 32
Dependent Claim
20 words
The circuit of claim 23, wherein said detector comprises a thin film semiconductor having a thickness less than 20 micrometers.
Claim 33
Dependent Claim
20 words
The circuit of claim 23, wherein said emitter comprises a thin film semiconductor having a thickness less than 20 micrometers.
Claim 34
Dependent Claim
22 words
The circuit of claim 23, wherein said emitter comprises a thin film single crystal semiconductor having a thickness less than 20 micrometers.
Claim 35
Dependent Claim
22 words
The circuit of claim 23, wherein said detector comprises a thin film single crystal semiconductor having a thickness less than 20 micrometers.
Claim 36
Dependent Claim
30 words
The circuit of claim 23, wherein said detector comprises In x Ga 1-x As y P 1-y semiconductor material, where 0<x<1 and 0<y<1, and wherein said host substrate comprises silicon.
Claim 37
Dependent Claim
30 words
The circuit of claim 30, wherein said emitter comprises In x Ga 1-x As y P 1-y semiconductor material, where 0<x<1 and 0<y<1, and wherein said host substrate comprises silicon.
Claim 38
Dependent Claim
75 words
A monolithic multilayered integrated circuit, comprising: a first substrate having a first side and a second side; an emitter situated to send electromagnetic signals towards the direction of said first side; a detector situated to receive said electromagnetic signals from the direction of said second side; wherein said emitter and said detector are created on another separate substrate, independently of said integrated circuit, and are then deposited on a host substrate in said integrated circuit.
Claim 39
Dependent Claim
75 words
A monolithic multilayered integrated circuit, comprising: a first substrate having a first side and a second side; an emitter situated to send electromagnetic signals towards the direction of said first side; a detector situated to receive said electromagnetic signals from the direction of said second side; wherein said emitter and said detector are created on another separate substrate, independently of said integrated circuit, and are then deposited on a host substrate in said integrated circuit.
Claim 40
Dependent Claim
91 words
The circuit of claim 32, wherein said emitter is created and deposited on said host substrate by the following steps: depositing a thin film epitaxial layer on a sacrificial layer situated on a growth substrate; defining said emitter in said epitaxial layer; coating said emitter with a carrier layer; removing said sacrificial layer to release the combination of said emitter and said carrier layer from said growth substrate; positioning said emitter on a transfer medium; removing said carrier layer; and depositing said emitter on said host substrate from said transfer medium.
Claim 41
Dependent Claim
91 words
The circuit of claim 32, wherein said detector is created and deposited on said host substrate by the following steps: depositing a thin film epitaxial layer on a sacrificial layer situated on a growth substrate; defining said detector in said epitaxial layer; coating said detector with a carrier layer; removing said sacrificial layer to release the combination of said detector and said carrier layer from said growth substrate; positioning said detector on a transfer medium; removing said carrier layer; and depositing said detector onto said host substrate from said transfer medium.
Claim 42
Dependent Claim
119 words
A monolithic multilayered integrated circuit, comprising: a first layer having a top and a bottom and an electrical connection therethrough to connect said top to a substrate at said bottom; a thin film semiconductor layer situated at said top in connection with said electrical connection; wherein said thin film semiconductor layer is formed and deposited on said first layer by the following steps: forming said semiconductor layer on a sacrificial layer situated on a growth substrate; coating said semiconductor layer with a carrier layer; etching away said growth substrate; etching away said sacrificial layer; positioning said semiconductor layer against a transfer medium; removing said carrier layer; and depositing said semiconductor layer on said first layer from said transfer medium.
Claim 43
Dependent Claim
119 words
A monolithic multilayered integrated circuit, comprising: a first layer having a top and a bottom and an electrical connection therethrough to connect said top to a substrate at said bottom; a thin film semiconductor layer situated at said top in connection with said electrical connection; wherein said thin film semiconductor layer is formed and deposited on said first layer by the following steps: forming said semiconductor layer on a sacrificial layer situated on a growth substrate; coating said semiconductor layer with a carrier layer; etching away said growth substrate; etching away said sacrificial layer; positioning said semiconductor layer against a transfer medium; removing said carrier layer; and depositing said semiconductor layer on said first layer from said transfer medium.
Claim 44
Dependent Claim
166 words
An optical detector for an integrated circuit in an imaging system, comprising: a first layer having a top and a bottom and a metal electrical connection therethrough to a substrate with processing circuitry configured to process electrical signals; a thin film semiconductor layer situated at said top and connected to said metal electrical connection, said thin film semiconductor layer in combination with said metal electrical connection configured to receive said optical signals from an exterior source and convert said optical signals into electrical signals; and said thin film semiconductor layer being independently formed from said first layer and then deposited on said first layer by the following steps; forming said thin film semiconductor layer on a sacrificial layer situated on a growth substrate; coating said semiconductor layer with a carrier layer; etching away said growth substrate; etching away said sacrificial layer; positioning said semiconductor layer against a transfer medium; removing said carrier layer; and depositing said semiconductor layer on said first layer from said transfer medium.
Claim 45
Dependent Claim
166 words
An optical detector for an integrated circuit in an imaging system, comprising: a first layer having a top and a bottom and a metal electrical connection therethrough to a substrate with processing circuitry configured to process electrical signals; a thin film semiconductor layer situated at said top and connected to said metal electrical connection, said thin film semiconductor layer in combination with said metal electrical connection configured to receive said optical signals from an exterior source and convert said optical signals into electrical signals; and said thin film semiconductor layer being independently formed from said first layer and then deposited on said first layer by the following steps; forming said thin film semiconductor layer on a sacrificial layer situated on a growth substrate; coating said semiconductor layer with a carrier layer; etching away said growth substrate; etching away said sacrificial layer; positioning said semiconductor layer against a transfer medium; removing said carrier layer; and depositing said semiconductor layer on said first layer from said transfer medium.
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