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US5279868A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of preparing ultrafine particle dispersion material

Assignee: New Energy and Industrial Technology Development Organization
•
Filing: 1992-09-30
•
Granted: 1994-01-18
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Expires: 2012-09-30
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Abstract

Abstract In the manufacture of ultrafine particles of semiconductor compound, pulse laser with high output is irradiated on an evaporation source having the same or similar composition as the above semiconductor compound to evaporate the source in a moment and the ultrafine particles of the semiconductor compound are produced utilizing the nuclear growth in inert gas. A process wherein a material for ultrafine particles is heated/evaporated by laser in inert gas and the resulting vapor is rapidly cooled by a collision with the inert gas whereby the resulting ultrafine particles of said material is sticked on a base plate and another process wherein a material for matrix is heated/evaporated by laser whereby the matrix is formed on the base plate are carried out alternately so that the ultrafine particles are homogeneously dispersed in the matrix to prepare the material wherein the ultrafine particles are dispersed.

Inventors

  • 👤 Shunsuke Ohtsuka
  • 👤 Hisao Nagata
  • 👤 Ken Yamashita
  • 👤 Tadashi Koyama
  • 👤 Shuhei Tanaka

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 07:47
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; C03; C03C; C03C12/00; C03C17/00; C03C17/02; C23C14/0623; C23C14/0629; C23C14/22; C23C14/24; C23C14/28

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 112 words
A method of preparing a material with ultrafine particles dispersed therein, comprising: heating by laser a material for ultrafine particles in an inert gas to evaporate the material as vapor, and rapidly cooling the vapor by colliding the vapor with the inert gas to thereby form the ultrafine particles and to deposit the ultrafine particles on a substrate, heating by laser a material for a matrix to evaporate the material, and depositing the matrix over the ultrafine particles, and repeating the heating and cooling steps to form the ultrafine particles, and the heating and depositing steps to form the matrix alternately so that the ultrafine particles are homogeneously dispersed in the matrix.
Claim 2
Independent Claim 112 words
A method of preparing a material with ultrafine particles dispersed therein, comprising: heating by laser a material for ultrafine particles in an inert gas to evaporate the material as vapor, and rapidly cooling the vapor by colliding the vapor with the inert gas to thereby form the ultrafine particles and to deposit the ultrafine particles on a substrate, heating by laser a material for a matrix to evaporate the material, and depositing the matrix over the ultrafine particles, and repeating the heating and cooling steps to form the ultrafine particles, and the heating and depositing steps to form the matrix alternately so that the ultrafine particles are homogeneously dispersed in the matrix.
Claim 3
Dependent Claim 26 words
A method of claim 1, wherein the material for the matrix sufficiently absorbs energy of the laser by selecting the material or wavelength of the laser.
Claim 4
Dependent Claim 42 words
A method of claim 1, wherein said material for the matrix heated by laser is deposited directly over the ultrafine particles or is reacted with a material in a gas phase so that a reacted material is deposited over the ultrafine particles.
Claim 5
Dependent Claim 14 words
A method of claim 1 wherein the laser is pulsed laser with high output.
Claim 6
Dependent Claim 32 words
A method of claim 1 wherein the laser with high output is a laser with output of 0.01-200 J/cm 2 , pulse width of 0.1-20 ns and repeated frequency of 2-1,000 Hz.
Claim 7
Dependent Claim 14 words
A method of claim 1 wherein the matrix is glass, metal oxide or metal.
Claim 8
Dependent Claim 27 words
A method of claim 1 wherein the ultrafine particles are semiconductor polyelemental compound of elements of group III-group V or that of elements of group II-group VI.
Claim 9
Dependent Claim 17 words
A method of claim 7 wherein the ultrafine particles are GaAs, InP, InGaAs, CdS, ZnSe or CdSSe.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-17 1997-07-19 1998-01-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-17 2001-07-19 2002-01-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-17 2005-07-19 2006-01-18 $7700.00 Window Closed / Lapsed

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