US5278431A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diamond rectifying contact with undoped diamond layer
Assignee: Kobe Steel USA Inc
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Filing: 1993-02-23
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Granted: 1994-01-11
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Expires: 2013-02-23
Abstract
Abstract A rectifying contact includes a first semiconducting diamond layer, a second undoped diamond layer on the first layer, and a third relatively highly doped diamond layer on the second layer. The first semiconducting diamond layer may be formed on a supporting substrate. A bonding contact is preferably formed on the third relatively highly doped diamond layer for facilitating electrical connection thereto. The bonding contact is preferably a titanium carbide/gold bilayer. In one embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by an electrically conductive substrate and an associated metal layer on an opposite side of the substrate from the semiconducting diamond layer. In another embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by a fourth relatively highly doped diamond layer and an associated bonding contact on the fourth diamond layer. The relatively highly doped diamond layers may be formed by ion implantation, annealing, and an etch of a graphitized surface portion of the implanted diamond layers.
Inventors
- 👤 Kalyankumar Das
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/871; H10D30/01; H10D30/60; H10D30/63; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D62/40; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/252
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
34 words
A rectifying contact comprising: a first semiconducting diamond layer; a second undoped diamond layer on said first semiconducting diamond layer; and a third relatively highly doped diamond layer on said second undoped diamond layer.
Claim 2
Dependent Claim
34 words
A rectifying contact comprising: a first semiconducting diamond layer; a second undoped diamond layer on said first semiconducting diamond layer; and a third relatively highly doped diamond layer on said second undoped diamond layer.
Claim 3
Dependent Claim
25 words
A rectifying contact according to claim 1 further comprising a bonding contact on said third relatively highly doped diamond layer for facilitating electrical connection thereto.
Claim 4
Dependent Claim
45 words
A rectifying contact according to claim 2 wherein said bonding contact comprises a refractory metal carbide layer on said third relatively highly doped diamond layer, and an electrically conductive passivating layer on said refractory metal carbide layer opposite said third relatively highly doped diamond layer.
Claim 5
Dependent Claim
29 words
A rectifying contact according to claim 1 wherein said first semiconducting diamond layer has a dopant level in the range of about 10 16 -10 19 cm -3 .
Claim 6
Dependent Claim
23 words
A rectifying contact according to claim 1 wherein said second undoped diamond layer has a thickness in a range of about 20-5000 Å.
Claim 7
Dependent Claim
27 words
A rectifying contact according to claim 1 wherein said third relatively highly doped diamond layer has a dopant level greater than about 10 19 cm -3 .
Claim 8
Dependent Claim
31 words
A rectifying contact according to claim 1 wherein said third relatively highly doped diamond layer has a dopant level in the range of about 10 20 -10 21 cm -3 .
Claim 9
Dependent Claim
20 words
A rectifying contact according to claim 1 wherein each of said first, second and third diamond layers comprises polycrystalline diamond.
Claim 10
Dependent Claim
21 words
A rectifying contact according to claim 1 wherein each of said first, second and third diamond layers comprises single crystal diamond.
Claim 11
Dependent Claim
20 words
A rectifying contact according to claim 1 wherein each of said first, second and third diamond layers is optically transmissive.
Claim 12
Dependent Claim
23 words
A rectifying contact according to claim 1 further comprising a substrate on said first semiconducting diamond layer opposite said second undoped diamond layer.
Claim 13
Dependent Claim
12 words
A rectifying contact according to claim 11 wherein said substrate comprises silicon.
Claim 14
Dependent Claim
49 words
A rectifying contact comprising: a first semiconducting diamond layer; a second undoped diamond layer on said first semiconducting diamond layer; a third relatively highly doped diamond layer on said second undoped diamond layer opposite said first semiconducting diamond layer; and an ohmic contact on said first semiconducting diamond layer.
Claim 15
Dependent Claim
49 words
A rectifying contact comprising: a first semiconducting diamond layer; a second undoped diamond layer on said first semiconducting diamond layer; a third relatively highly doped diamond layer on said second undoped diamond layer opposite said first semiconducting diamond layer; and an ohmic contact on said first semiconducting diamond layer.
Claim 16
Dependent Claim
28 words
A rectifying contact according to claim 13 wherein said ohmic contact comprises an electrically conductive substrate on said first semiconducting diamond layer opposite said second undoped diamond layer.
Claim 17
Dependent Claim
30 words
A rectifying contact according to claim 14 wherein said ohmic contact further comprises a metal layer on said substrate opposite said first semiconducting diamond layer for facilitating electrical connection thereto.
Claim 18
Dependent Claim
12 words
A rectifying contact according to claim 14 wherein said substrate comprises silicon.
Claim 19
Dependent Claim
25 words
A rectifying contact according to claim 13 wherein said ohmic contact comprises a fourth relatively highly doped diamond layer on said first semiconducting diamond layer.
Claim 20
Dependent Claim
28 words
A rectifying contact according to claim 17 wherein said ohmic contact further comprises a bonding contact on said fourth relatively highly doped diamond layer for facilitating connection thereto.
Claim 21
Dependent Claim
45 words
A rectifying contact according to claim 18 wherein said bonding contact comprises a refractory metal carbide layer on said fourth relatively highly doped diamond layer, and an electrically conductive passivating layer on said refractory metal carbide layer opposite said fourth relatively highly doped diamond layer.
Claim 22
Dependent Claim
31 words
A rectifying contact according to claim 17 wherein each of said third and fourth relatively highly doped diamond layers has a dopant level greater than about 10 19 cm -3 .
Claim 23
Dependent Claim
35 words
A rectifying contact according to claim 17 wherein each of said third and fourth relatively highly doped diamond layers has a dopant level in the range of about 10 20 -10 21 cm -3 .
Claim 24
Dependent Claim
29 words
A rectifying contact according to claim 13 wherein said first semiconducting diamond layer has a dopant level in the range of about 10 16 -10 19 cm -3 .
Claim 25
Dependent Claim
23 words
A rectifying contact according to claim 13 wherein said second undoped diamond layer has a thickness in a range of about 20-5000 Å.
Claim 26
Dependent Claim
25 words
A rectifying contact according to claim 13 further comprising a bonding contact on said third relatively highly doped diamond layer for facilitating electrical connection thereto.
Claim 27
Dependent Claim
45 words
A rectifying contact according to claim 24 wherein said bonding contact comprises a refractory metal carbide layer on said third relatively highly doped diamond layer, and an electrically conductive passivating layer on said refractory metal carbide layer opposite said third relatively highly doped diamond layer.
Claim 28
Dependent Claim
20 words
A rectifying contact according to claim 13 wherein each of said first, second and third diamond layers comprises polycrystalline diamond.
Claim 29
Dependent Claim
21 words
A rectifying contact according to claim 13 wherein each of said first, second and third diamond layers comprises single crystal diamond.
Claim 30
Dependent Claim
20 words
A rectifying contact according to claim 13 wherein each of said first, second and third diamond layers is optically transmissive.
Claim 31
Dependent Claim
23 words
A rectifying contact according to claim 13 further comprising a substrate on said first semiconducting diamond layer opposite said second undoped diamond layer.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-01-10 | 1997-07-12 | 1998-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-10 | 2001-07-12 | 2002-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-10 | 2005-07-12 | 2006-01-11 | $7700.00 | Window Closed / Lapsed |