Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits

Claim 2

A zener diode created on a portion of an N type semiconductor substrate having a first dopant concentration, said substrate having a top surface, the diode comprising: a first N type region having a second dopant concentration implanted in the semiconductor substrate, the second dopant concentration being greater than the first dopant concentration, the first region having a first surface generally coplanar with said top surface; a P type region implanted in the semiconductor substrate, the first n type region and the p type region being spaced apart from one another, the p type region having a second surface generally coplanar with said top surface; and a second N type region, implanted in the semiconductor substrate between the first n type region and the p type region, abutting both the first n type region and the p type region and having a third surface generally coplanar with said top surface, the second n type region having a dopant concentration greater than the first dopant concentration but less than the second dopant concentration.

Claim 3

The zener diode of claim 1 wherein the dopant for the second n type region comprises phosphorous.

Claim 4

The zener diode of claim 2 wherein the phosphorous concentration is approximately 10 17 atoms/cm 3 .

Claim 5

The zener diode of claim 1 wherein the zener diode has a breakdown voltage of 6.6 volts.

Claim 6

An electrostatic discharge protection circuit coupled to the source of an input transistor, the circuit comprising: a zener diode having an avalanche breakdown voltage of 6.6 volts, the cathode of the zener diode being coupled to the source of the input transistor; said zener diode comprises a P+ region with a first dopant concentration and an N+ region with a second dopant concentration formed on an N type substrate having a third dopant concentration, the P+ region and the N+ region being separated by an N type lightly doped region having a fourth dopant concentration less than the first and second dopant concentrations but greater than the third dopant concentration; and resistor means coupled to the anode of the zener diode and to a ground voltage potential.

Claim 7

An electrostatic discharge protection circuit coupled to the source of an input transistor, the circuit comprising: a zener diode having an avalanche breakdown voltage of 6.6 volts, the cathode of the zener diode being coupled to the source of the input transistor; said zener diode comprises a P+ region with a first dopant concentration and an N+ region with a second dopant concentration formed on an N type substrate having a third dopant concentration, the P+ region and the N+ region being separated by an N type lightly doped region having a fourth dopant concentration less than the first and second dopant concentrations but greater than the third dopant concentration; and resistor means coupled to the anode of the zener diode and to a ground voltage potential.

Claim 8

The zener diode of claim 5 wherein the substrate has a top surface, the P+ region has a first surface, the N+ region has a second surface, and the n type lightly doped region has a third surface, said top surface and said first, second and third surfaces being generally coplanar.

Claim 9

A zener diode created on a portion of a semiconductor substrate with a first conductivity type and a first dopant concentration and having a top surface, the diode comprising: a first region having the first conductivity type and a second dopant concentration implanted in the semiconductor substrate, the second dopant concentration being greater than the first dopant concentration, the first region having a first surface generally coplanar with the top surface; a second region having a second conductivity type implanted in the semiconductor substrate, the first and second regions being spaced apart from one another, the second region having a second surface generally coplanar with the top surface; and a third region implanted in the semiconductor substrate between the first and second regions, the third region abutting both the first and second regions and having a third surface generally coplanar with said top surface, wherein the third region has the first conductivity type and a dopant concentration greater than the first dopant concentration but less than the second dopant concentration.

Claim 10

A zener diode created on a portion of a semiconductor substrate with a first conductivity type and a first dopant concentration and having a top surface, the diode comprising: a first region having the first conductivity type and a second dopant concentration implanted in the semiconductor substrate, the second dopant concentration being greater than the first dopant concentration, the first region having a first surface generally coplanar with the top surface; a second region having a second conductivity type implanted in the semiconductor substrate, the first and second regions being spaced apart from one another, the second region having a second surface generally coplanar with the top surface; and a third region implanted in the semiconductor substrate between the first and second regions, the third region abutting both the first and second regions and having a third surface generally coplanar with said top surface, wherein the third region has the first conductivity type and a dopant concentration greater than the first dopant concentration but less than the second dopant concentration.

Claim 11

The zener diode of claim 7 wherein the zener diode has a breakdown voltage of 6.6 volts.

Claim 12

The zener diode of claim 7 wherein the first conductivity type is N-type and the second conductivity type is P-type.

Claim 13

The zener diode of claim 7 wherein the dopant concentration of said third region is about 10 17 atoms/cm 3 .