US5274541A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Parallel circuit module including a diode and an IGBT
Assignee: Hitachi Ltd
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Filing: 1990-12-20
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Granted: 1993-12-28
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Expires: 2010-12-20
Abstract
Abstract In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.
Inventors
- 👤 Shin Kimura
- 👤 Yasuo Matsuda
- 👤 Norikazu Tokunaga
- 👤 Mutsuhiro Mori
- 👤 Toshiki Kurosu
- 👤 Yutaka Suzuki
- 👤 Naoki Sakurai
- 👤 Yasumichi Yasuda
- 👤 Tomoyuki Tanaka
- 👤 Kenichi Onda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:05
CPC Classifications
H; H02; H02M; H02M7/00; H02M7/42; H02M7/44; H02M7/48; H02M7/483; H02M7/487; H02M7/003; H03; H03K; H03K17/00; H03K17/08; H03K17/081; H03K17/0814; H03K17/08148; H03K17/51; H03K17/56; H03K17/567; H10; H10W; H10W90/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
197 words
A module having a semiconductor substrate for providing thereon an insulated gate bipolar transistor (IBGT) and a diode, said IGBT and said diode being electrically connected in an anti-parallel fashion in said module, wherein assuming a value of di/dt attained, for a turn-on rise time of 0.5 μs of the said IGBT with a voltage equal to half a rated voltage thereof and at room temperature of said semiconductor substrate, is α max, where i represents the current through said IGBT and α max represents the maximum value of di/dt the recovery characteristic of said diode, in the parallel connection, is such that a peak-to-peak value (I RP ) of a recovery current thereof is less than 0.55 times the rated current (I F ) when said diode is recovered at the rated current I F to the value of di/dt corresponding to α max, and a recovery time thereof, in which the recovery current is attenuated from the peak-to-peak value I RP to one tenth thereof, is at least 0.75 times a resonance period determined by the sum of parasitic capacitances associated with said IGBT and said diode and a wiring inductance existing in said module.
Claim 2
Dependent Claim
197 words
A module having a semiconductor substrate for providing thereon an insulated gate bipolar transistor (IBGT) and a diode, said IGBT and said diode being electrically connected in an anti-parallel fashion in said module, wherein assuming a value of di/dt attained, for a turn-on rise time of 0.5 μs of the said IGBT with a voltage equal to half a rated voltage thereof and at room temperature of said semiconductor substrate, is α max, where i represents the current through said IGBT and α max represents the maximum value of di/dt the recovery characteristic of said diode, in the parallel connection, is such that a peak-to-peak value (I RP ) of a recovery current thereof is less than 0.55 times the rated current (I F ) when said diode is recovered at the rated current I F to the value of di/dt corresponding to α max, and a recovery time thereof, in which the recovery current is attenuated from the peak-to-peak value I RP to one tenth thereof, is at least 0.75 times a resonance period determined by the sum of parasitic capacitances associated with said IGBT and said diode and a wiring inductance existing in said module.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-27 | 1997-06-28 | 1997-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-27 | 2001-06-28 | 2001-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-27 | 2005-06-28 | 2005-12-28 | $7700.00 | Window Closed / Lapsed |