US5273622A
Expired / Lapsed
US
⏱️ 0.0 years remaining
System for continuous fabrication of micro-structures and thin film semiconductor devices on elongate substrates
Assignee: Sterling LC
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Filing: 1992-06-15
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Granted: 1993-12-28
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Expires: 2012-06-15
Abstract
Abstract A method of fabricating semiconductor devices on a moveable fiber includes the steps of moving the fiber longitudinally along a predetermined pathway, applying a semiconductor material to at least a portion of the surface of the fiber at a first station along the pathway, applying a resist over the semiconductor material at a second station spaced from the first station in a direction of movement of the fiber, pre-baking the resist at a third station spaced from the second station, exposing a predetermined semiconductor device pattern in the resist at a fourth station spaced from the third station, developing the exposed resist at a fifth station along the pathway, etching or depositing the predetermined pattern on the material over which the exposed resist was located at a sixth station along the pathway, and removing the remaining resist from the semiconductor material at a seventh station along the pathway. Additionally, an eighth station could be provided for cutting the fiber into selected lengths for later assembly into bundles or combinations for the construction of electrical apparatus.
Inventors
- 👤 Stephen C. Jacobsen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:14
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0468; H10P72/0471; B; B23; B23K; B23K15/00; B23K15/002; B23K17/00; B23K26/00; B23K26/08; B23K26/082; G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/09; G01P15/0922; G01P15/18; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12002; G03; G03C; G03C7/00; G03C7/22; G03C7/24; G03F; G03F7/00; G03F7/70; G03F7/70691; G05; G05B; G05B19/00; G05B19/02; G05B19/18; G05B19/182; G05B19/186; G12; G12B; G12B1/00; H10D; H10D62/00; H10D62/10; H10D62/117; H10P72/0474; H10P72/50; H10W; H10W70/00; H10W70/01; H10W70/05; H10W90/00; Y; Y10; Y10S; Y10S438/00; Y10S438/907; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
214 words
A method of fabricating semiconductor devices on a moving elongate substrate comprising the steps of: (a) moving the elongate substrate longitudinally along a predetermined pathway, (b) applying a semiconductor material to at least a portion of the surface of the substrate at a first station along the pathway, (c) applying a resist over the semiconductor material at a second station along the pathway in the direction of movement of the substrate from the first station, (d) setting the resist at a third station along the pathway in the direction of movement of the substrate from the second station, (e) exposing a predetermined semiconductor device pattern in the resist at a fourth station along the pathway in the direction of movement of the substrate from the third station, (f) developing the exposed resist at a fifth station along the pathway in the direction of movement of the substrate from the fourth station, (g) etching/depositing the predetermined pattern on the material over which the exposed resist was located at a sixth station along the pathway in the direction of movement of the substrate from the fifth station, and (h) removing the remaining resist from the semiconductor material at a seventh station along the pathway in the direction of movement of the substrate from the sixth station.
Claim 2
Independent Claim
214 words
A method of fabricating semiconductor devices on a moving elongate substrate comprising the steps of: (a) moving the elongate substrate longitudinally along a predetermined pathway, (b) applying a semiconductor material to at least a portion of the surface of the substrate at a first station along the pathway, (c) applying a resist over the semiconductor material at a second station along the pathway in the direction of movement of the substrate from the first station, (d) setting the resist at a third station along the pathway in the direction of movement of the substrate from the second station, (e) exposing a predetermined semiconductor device pattern in the resist at a fourth station along the pathway in the direction of movement of the substrate from the third station, (f) developing the exposed resist at a fifth station along the pathway in the direction of movement of the substrate from the fourth station, (g) etching/depositing the predetermined pattern on the material over which the exposed resist was located at a sixth station along the pathway in the direction of movement of the substrate from the fifth station, and (h) removing the remaining resist from the semiconductor material at a seventh station along the pathway in the direction of movement of the substrate from the sixth station.
Claim 3
Dependent Claim
41 words
A method as in claim 1 further including the step of (i) applying conductive material at preselected location over the semiconductor material at an eighth station along the pathway in the direction of movement of the substrate from the seventh station.
Claim 4
Dependent Claim
37 words
A method as in claim 2 further including the step of (j) cutting the substrate into selected lengths at a ninth station along the pathway in the direction of movement of the substrate from the eighth station.
Claim 5
Dependent Claim
41 words
A method as in claim 3 further including the step of (k) assembling selected cut lengths of the substrate into a combination at a tenth station along the pathway in the direction of movement of the substrate from the ninth station.
Claim 6
Dependent Claim
39 words
A method as in claim 1 wherein said moving step further comprises selectively rotating the substrate about its longitudinal axis as it moves to allow the forming of semiconductor devices about the lateral periphery of the substrate and longitudinally.
Claim 7
Dependent Claim
43 words
A method as in claim 1 wherein step (e) comprises selectively moving an exposure beam source circumferentially about the substrate and directing the exposure beam toward the substrate as it moves and rotates to thereby expose the predetermined semiconductor pattern in the resist.
Claim 8
Dependent Claim
14 words
A method as in claim 6 wherein the exposure beam is an electron beam.
Claim 9
Dependent Claim
14 words
A method as in claim 6 wherein the exposure beam is an ion beam.
Claim 10
Dependent Claim
14 words
A method as in claim 6 wherein the exposure beam is a laser beam.
Claim 11
Dependent Claim
14 words
A method as in claim 6 wherein the exposure beam is an x-ray beam.
Claim 12
Dependent Claim
13 words
A method as in claim 6 wherein the exposure beam is ultraviolet light.
Claim 13
Independent Claim
13 words
A method as in claim wherein the substrate comprises a laterally flexible fiber.
Claim 14
Dependent Claim
14 words
A method as in claim 12 wherein the fiber has a generally circular cross-section.
Claim 15
Dependent Claim
16 words
A method as in claim 13 wherein the fiber is made of an electrically insulative material.
Claim 16
Dependent Claim
27 words
A method as in claim 14 wherein the fiber is made of a material selected from the group consisting of quartz, silica, sapphire, ceramic, piezoceramic, and semiconductors.
Claim 17
Dependent Claim
17 words
A method as in claim 1 wherein step (b) comprises sputtering the material to coat the substrate.
Claim 18
Dependent Claim
19 words
A method as in claim 1 wherein step (b) comprises chemical vapor deposition of the material onto the substrate.
Claim 19
Dependent Claim
17 words
A method as in claim 1 wherein step (b) comprises evaporation of the material onto the substrate.
Claim 20
Dependent Claim
17 words
A method as in claim 1 further comprising periodically repeating steps (b) through (h) on said substrate.
Claim 21
Independent Claim
133 words
A method of etching/depositing a pattern on a moveable elongate rod comprising the steps of (a) moving the elongate rod longitudinally along a certain pathway, (b) applying a resist to the rod at a first location along the pathway, (c) setting the resist at a second location along the pathway forwardly of the first location, (d) directing exposure beams toward the rod at a third location along the pathway forwardly of the second location to expose a pattern in the resist circumferentially and longitudinally on the rod, (e) developing the exposed resist on the rod at a fourth location along the pathway forwardly of the third location, and (f) etching/depositing material on the rod in a manner determined by said pattern, at a fifth location along the pathway forwardly of the fourth location.
Claim 22
Independent Claim
133 words
A method of etching/depositing a pattern on a moveable elongate rod comprising the steps of (a) moving the elongate rod longitudinally along a certain pathway, (b) applying a resist to the rod at a first location along the pathway, (c) setting the resist at a second location along the pathway forwardly of the first location, (d) directing exposure beams toward the rod at a third location along the pathway forwardly of the second location to expose a pattern in the resist circumferentially and longitudinally on the rod, (e) developing the exposed resist on the rod at a fourth location along the pathway forwardly of the third location, and (f) etching/depositing material on the rod in a manner determined by said pattern, at a fifth location along the pathway forwardly of the fourth location.
Claim 23
Dependent Claim
22 words
A method as in claim 20 wherein step (d) comprises moving the rod longitudinally and rotating the rod about its longitudinal axis.
Claim 24
Dependent Claim
14 words
A method as in claim 20 wherein the exposure beam is an electron beam.
Claim 25
Dependent Claim
14 words
A method as in claim 20 wherein the exposure beam is an ion beam.
Claim 26
Dependent Claim
14 words
A method as in claim 20 wherein the exposure beam is a laser beam.
Claim 27
Dependent Claim
14 words
A method as in claim 20 wherein the exposure beam is an x-ray beam.
Claim 28
Dependent Claim
13 words
A method as in claim 20 wherein the exposure beam is ultraviolet light.
Claim 29
Dependent Claim
14 words
A method as in claim 20 wherein the rod comprises a laterally flexible strand.
Claim 30
Dependent Claim
27 words
A method as in claim 27 further comprising the step of (g) cutting the strand into predetermined lengths at a sixth location forwardly of the fifth location.
Claim 31
Dependent Claim
17 words
A method as in claim 27 wherein step (f) comprises applying an etching reagent to the strand.
Claim 32
Dependent Claim
16 words
A method as in claim 27 wherein step (f) comprises depositing a material on the strand.
Claim 33
Dependent Claim
24 words
A method as in claim 27 wherein said strand is material selected from the group consisting of aluminum, gold, silica nitride, steel and quartz.
Claim 34
Dependent Claim
26 words
A method as in claim 20 wherein step (d) comprises moving the rod longitudinally and moving the exposure beam relative to the circumference of the rod.
Claim 35
Dependent Claim
34 words
A method as in claim 20 wherein step (d) comprises moving the rod longitudinally and rotating the rod about its longitudinal axis and moving the exposure beam relative to the circumference of the rod.
References Cited (Backward Citations)
US3534467A
Cited
US5106455A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-27 | 1997-06-28 | 1997-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-27 | 2001-06-28 | 2001-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-27 | 2005-06-28 | 2005-12-28 | $7700.00 | Window Closed / Lapsed |