Transmission mode InGaAs photocathode for night vision system

Claim 2

An image intensifier tube for use in a night vision system, comprising: a photocathode having an indium-gallium-arsenide (InGaAs) active layer to produce an electron pattern corresponding to a viewed image; a microchannel plate disposed adjacent to said photocathode to increase the energy of said electrons emitted from said photocathode; a phosphor screen to illuminate the image formed by said emitted electrons; and an optical invertor to invert the illuminated image produced by said phosphor screen.

Claim 3

The image intensification tube of claim 1, wherein said photocathode further comprises: a window layer formed from aluminum-indium-arsenide (AlInAs) and epitaxially grown to said active layer; a coating applied to said window layer; a glass face plate thermally bonded onto said coating; and a chrome electrode bonded to the edges of said face plate, said window layer and said active layer, said chrome electrode providing a contact for electrical connection between said photocathode and said image intensifier tube; whereby an optical image illuminated onto said face plate results in a corresponding electron pattern emitted from said active layer.

Claim 4

The photocathode of claim 2, wherein the concentration of indium in said active layer is defined by an atomic fraction x of less than 0.2 in the compound In x Ga 1-x As.

Claim 5

An image intensifier tube for use in a night vision system, comprising: a photocathode having an indium-gallium-arsenide (InGaAs) active layer to produce an electron pattern corresponding to a viewed image; a microchannel plate disposed adjacent to said photocathode to increase the energy of said electrons emitted from said photocathode; a phosphor screen to illuminate the image formed by said emitted electrons; and an optical invertor to invert the illuminated image produced by said phosphor screen; wherein said photocathode further comprises: a window layer formed from aluminum-indium-arsenide (AlInAs) and epitaxially grown to said active layer; a coating applied to said window layer; a glass face plate thermally bonded onto said coating; and a chrome electrode bonded to the edges of said face plate, said window layer and said active layer, said chrome electrode providing a contact for electrical connection between said photocathode and said image intensified tube; whereby an optical image illuminated onto said face plate results in a corresponding electron pattern emitted from said active layer; wherein the concentration of indium in said active layer is defined by an atomic fraction x of less than 0.2 in the compound In x Ga 1-x As; and wherein the concentration of indium in said window layer is defined by an atomic fraction y of 0.2 in the compound Al 1-y In y As.

Claim 6

An image intensifier tube for use in a night vision system, comprising: a photocathode having an indium-gallium-arsenide (InGaAs) active layer to produce an electron pattern corresponding to a viewed image; a microchannel plate disposed adjacent to said photocathode to increase the energy of said electrons emitted from said photocathode; a phosphor screen to illuminate the image formed by said emitted electrons; and an optical invertor to invert the illuminated image produced by said phosphor screen; wherein said photocathode further comprises: a window layer formed from aluminum-indium-arsenide (AlInAs) and epitaxially grown to said active layer; a coating applied to said window layer; a glass face plate thermally bonded onto said coating; and a chrome electrode bonded to the edges of said face plate, said window layer and said active layer, said chrome electrode providing a contact for electrical connection between said photocathode and said image intensified tube; whereby an optical image illuminated onto said face plate results in a corresponding electron pattern emitted from said active layer; wherein the concentration of indium in said active layer is defined by an atomic fraction x of less than 0.2 in the compound In x Ga 1-x As; and wherein the concentration of indium in said window layer is defined by an atomic fraction y of 0.2 in the compound Al 1-y In y As.

Claim 7

The photocathode of claim 4, wherein said coating further comprises an anti-reflective layer of silicon nitrate, and a protective layer of silicon dioxide.

Claim 8

The photocathode of claim 5, wherein said active layer is doped with a P-type impurity at a level of approximately 10 19 atoms per cubic centimeter.

Claim 9

The photocathode of claim 6, wherein said window layer is doped with a P-type impurity at a level of approximately 10 18 atoms per cubic centimeter.

Claim 10

The photocathode of claim 7, wherein the optical transmission cut-off wavelength for said window layer is 600 nanometers.

Claim 11

The photocathode of claim 8, wherein the spectral response cut-off wavelength of said photocathode is 1,060 nanometers.

Claim 12

An image intensifier for use in a night vision system, said image intensifier comprising: a photocathode having an active layer of indium-gallium-arsenide (InGaAs); an electron multiplier adjacent said photocathode; and a receiving element for receiving electrons from said electron multiplier.

Claim 13

An image intensifier for use in a night vision system, said image intensifier comprising: a photocathode having an active layer of indium-gallium-arsenide (InGaAs); an electron multiplier adjacent said photocathode; and a receiving element for receiving electrons from said electron multiplier.

Claim 14

The image intensifier of claim 10 further including a window layer of aluminum-indium-arsenide (AlInAs) epitaxially grown to said active layer and transmitting photons thereto.

Claim 15

The image intensifier of claim 11 wherein the concentration of indium in said window layer is defined by an atomic fraction Y of 0.2 in the compound Al 1-x In y As.

Claim 16

The image intensifier of claim 11 wherein said window layer is doped with a P-type impurity at a level of substantially 10 19 atoms per cubic centimeter.

Claim 17

The image intensifier of claim 10 wherein said receiving element includes a phosphor screen for producing a visible light image in response to said electrons.

Claim 18

The image intensifier of claim 10 further including a transparent face plate affixed to said window layer.

Claim 19

The image intensifier of claim 15 wherein each of said face plate, said window layer, and said active layer define respective edges, and an electrically conductive electrode element connecting with said respective edges.

Claim 20

The image intensifier of claim 15 wherein said transparent face plate is formed of glass and said glass face plate is thermally bonded to said window layer.

Claim 21

The image intensifier of claim 10 wherein the concentration of indium in said active layer is defined by an atomic fraction X of less than 0.2 in the compound In x Ga 1-x As.

Claim 22

The image intensifier of claim 10 wherein said active layer is doped with a P-type impurity at a level of substantially 10 19 atoms per cubic centimeter.