US5268327A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial compositions
Assignee: Advanced Energy Fund LP
•
Filing: 1992-05-19
•
Granted: 1993-12-07
•
Expires: 2012-05-19
Abstract
Abstract A method for manufacturing, by chemical depostion from the vapor phase, epitaxial composites comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium alluminum arsenide (GaAlAs) on single crystal silicon substrates.
Inventors
- 👤 Stanley M. Vernon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/1276; H10D; H10D62/00; H10D62/80; H10D62/82; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1243; H10F77/1248; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
139 words
A method of forming a composite comprising a single crystal silicon substrate and a single crystal film consisting of gallium arsenide or gallium aluminum arsenide disposed on said silicon substrate, said method comprising the steps of: heating said substrate in a reactor vessel and introducing into said heated reactor vessel a mixture in the vapor phase of arsine and an organometallic compound of gallium or of arsine and a mixture of organometallic compounds of gallium and aluminum, in a carrier gas; epitaxially depositing on and in direct contact with said silicon surface a single crystal film of gallium arsenide or gallium aluminum arsenide under conditions which produce an initial transient unbalance in the gallium-arsenic vapor ratio towards a more gallium rich vapor; and continuing said depositing to produce a single film deposit of gallium arsenide or gallium aluminum arsenide.
Claim 2
Independent Claim
139 words
A method of forming a composite comprising a single crystal silicon substrate and a single crystal film consisting of gallium arsenide or gallium aluminum arsenide disposed on said silicon substrate, said method comprising the steps of: heating said substrate in a reactor vessel and introducing into said heated reactor vessel a mixture in the vapor phase of arsine and an organometallic compound of gallium or of arsine and a mixture of organometallic compounds of gallium and aluminum, in a carrier gas; epitaxially depositing on and in direct contact with said silicon surface a single crystal film of gallium arsenide or gallium aluminum arsenide under conditions which produce an initial transient unbalance in the gallium-arsenic vapor ratio towards a more gallium rich vapor; and continuing said depositing to produce a single film deposit of gallium arsenide or gallium aluminum arsenide.
Claim 3
Dependent Claim
32 words
A method according to claim 1, wherein said crystal film is deposited under conditions which produce a transient preconditioning of the silicon surface for gallium arsenide or gallium aluminum arsenide epitaxial deposition.
Claim 4
Dependent Claim
39 words
A method according to claim 1, wherein said single crystal film is deposited initially from an arsine-to-gallium or arsine-to-gallium-plus-aluminum instantaneous vapor ratio value significantly lower than 5:1, and thereafter being deposited at a ratio of at least about 5:1.
Claim 5
Dependent Claim
13 words
A method according to claim 1, and employing hydrogen as the carrier gas.
Claim 6
Dependent Claim
28 words
A method according to claim 1, including the step of sweeping said reactor vessel with said carrier gas prior to introducing said mixture into said heated reactor vessel.
Claim 7
Dependent Claim
27 words
A method according to claim 1, including the step of pretreating said silicon substrate with an HF solution prior to introducing said substrate into said reactor vessel.
Claim 8
Dependent Claim
28 words
A method according to claim 1, including the step of maintaining the silicon substrate and the walls of said reactor vessel at substantially different temperatures during said deposition.
Claim 9
Dependent Claim
20 words
A method according to claim 7, wherein said reactor walls are maintained at substantially cooler temperature than said silicon substrate.
Claim 10
Dependent Claim
23 words
A method according to claim 1, wherein said organometallic compound is selected from the group consisting of trimethylgallium, triethylgallium, trimethylaluminum and mixtures thereof.
Claim 11
Dependent Claim
21 words
A method according to claim 1, wherein the temperature of said silicon substrate is maintained at about 620° during said deposition.
Claim 12
Dependent Claim
26 words
A method according to claim 1, and including the step of introducing a donor dopant into the vapor phase mixture during said single crystal film deposition.
Claim 13
Dependent Claim
20 words
A method according to claim 1, wherein said dopant is selected from the group consisting of selenium, zinc and cadmium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-06 | 1997-06-07 | 1997-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-06 | 2001-06-07 | 2001-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-06 | 2005-06-07 | 2005-12-07 | $7700.00 | Window Closed / Lapsed |