Abstract An etching process allows a selective single-step patterning of silicon devices in a noncorrosive environment. The etching of silicon relies on a maskless laser-assisted technique in a gaseous halocarbon ambient, such as the gaseous chlorofluorocarbons, dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm2) an undesirable, increased surface roughness is observed. Etch rates as large as approximately 15 angstroms per pulse are attained within predetermined processing windows. This provides a means for thin membrane formation in silicon, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.
A method of performing a maskless laser-assisted etching of silicon sample in a gaseous halocarbon ambient contained in a chamber comprising: placing said silicon sample in said chamber; flowing said gaseous halocarbon ambient in said chamber to attain a pressure within a processing window; absorbing of some of said gaseous halocarbon ambient onto said silicon sample; illuminating with radiant energy onto said silicon sample within said gaseous halocarbon ambient to melt said silicon sample, but insufficient to cause ablation of said silicon sample where said radiant energy impinges; decomposing the adsorbed said some of said gaseous halocarbon ambient to impart an etching reaction between the dissociated halocarbon and the sample forming volatile byproducts; and desorbing said volatile by-products to result in the removal of at least one layer of said silicon sample.
Claim 2
Independent Claim
132 words
A method of performing a maskless laser-assisted etching of silicon sample in a gaseous halocarbon ambient contained in a chamber comprising: placing said silicon sample in said chamber; flowing said gaseous halocarbon ambient in said chamber to attain a pressure within a processing window; absorbing of some of said gaseous halocarbon ambient onto said silicon sample; illuminating with radiant energy onto said silicon sample within said gaseous halocarbon ambient to melt said silicon sample, but insufficient to cause ablation of said silicon sample where said radiant energy impinges; decomposing the adsorbed said some of said gaseous halocarbon ambient to impart an etching reaction between the dissociated halocarbon and the sample forming volatile byproducts; and desorbing said volatile by-products to result in the removal of at least one layer of said silicon sample.
Claim 3
Dependent Claim
29 words
A method according to claim 1 further including: repeating the steps of adsorbing, illuminating, decomposing and desorbing until the desired removal of silicon from said silicon sample is attained.
Claim 4
Dependent Claim
23 words
A method according to claim 2 further including: purging said chamber and removing said silicon sample after said desired removal has been attained.
Claim 5
Dependent Claim
20 words
A method according to claim 3 in which said radiant energy is a UV wavelength beam coming from a laser.
Claim 6
Dependent Claim
47 words
A method according to claim 4 in which said halocarbon ambient is pressurized within predetermined limits and said sample is at a predetermined temperature and said UV wavelength beam is at predetermined rates and intensities to assure that said silicon sample is melted but not ablated thereby.
Claim 7
Dependent Claim
28 words
A method according to claim 5 in which said UV wavelength beam is shaped, homogenized and adjusted in magnitude to obtain an optimal fluence impinging onto said silicon.
Claim 8
Dependent Claim
19 words
A method according to claim 6 in which the pressure of said ambient halocarbon is greater than 150 torr.