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US5266529A Expired / Lapsed US ⏱️ 0.0 years remaining

Focused ion beam for thin film resistor trim on aluminum nitride substrates

Assignee: Northrop Grumman Corp
•
Filing: 1991-10-21
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Granted: 1993-11-30
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Expires: 2011-10-21
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Abstract

Abstract A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.

Inventors

  • 👤 James C. Lau
  • 👤 Maurice Lowery
  • 👤 Kenneth Lui

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 00:30
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H01; H01C; H01C17/00; H01C17/22; H01C17/24; H01C17/2404; H10P; H10P95/00

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 86 words
A method of fabricating a thin film resistor with a precise resistance value comprising the steps of: forming a thin film of resistive material on an aluminum nitride substrate; attaching a pair of conductor pads directly to said thin film, said conductor pads being spaced from one another and from said substrate, said conductor pads being adaptable to electrically couple said resistive material to a circuit; and selectively removing portions of said thin film of resistive material with a exposing a corresponding area of said substrate.
Claim 2
Independent Claim 86 words
A method of fabricating a thin film resistor with a precise resistance value comprising the steps of: forming a thin film of resistive material on an aluminum nitride substrate; attaching a pair of conductor pads directly to said thin film, said conductor pads being spaced from one another and from said substrate, said conductor pads being adaptable to electrically couple said resistive material to a circuit; and selectively removing portions of said thin film of resistive material with a exposing a corresponding area of said substrate.
Claim 3
Dependent Claim 13 words
The method of claim 1 wherein said ion beam is an inert beam.
Claim 4
Dependent Claim 13 words
The method of claim 1 wherein said ion beam is an Argon beam.
Claim 5
Dependent Claim 19 words
The method of claim 1 wherein said thin film of resistive material is nickel chromium (nichrome) or tantalum nitride.
Claim 6
Dependent Claim 15 words
The method of claim 1 wherein an L-shaped portion is removed from said thin film.
Claim 7
Dependent Claim 15 words
The method of claim 5 wherein said L-shaped portion abuts an edge of said resistor.
Claim 8
Dependent Claim 16 words
The method of claim 1 wherein said beam is approximately 500 to 10,000 angstroms in diameter.
Claim 9
Independent Claim 109 words
A method of fabricating a thin film resistor with a precise resistance value comprising the steps of: forming a thin film of nickel chromium (nichrome) on an aluminum nitride substrate, said substrate having an edge; attaching a pair of conductor pads directly to said thin film, said pads being spaced from one another and from said substrate, said pads adapted to electrically couple said nickel chromium to a circuit; and removing an L-shaped portion of said film of nickel chromium with a focused ion beam to increase the total resistance of said resistor by exposing a corresponding area of said substrate, said L-shaped portion extending from said substrate edge.
Claim 10
Independent Claim 109 words
A method of fabricating a thin film resistor with a precise resistance value comprising the steps of: forming a thin film of nickel chromium (nichrome) on an aluminum nitride substrate, said substrate having an edge; attaching a pair of conductor pads directly to said thin film, said pads being spaced from one another and from said substrate, said pads adapted to electrically couple said nickel chromium to a circuit; and removing an L-shaped portion of said film of nickel chromium with a focused ion beam to increase the total resistance of said resistor by exposing a corresponding area of said substrate, said L-shaped portion extending from said substrate edge.

References Cited (Backward Citations)

US4457803A Cited
JPS58210653A Cited
US4737757A Cited
JPS62232953A Cited
JPS63102347A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-11-29 1997-05-31 1997-11-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-11-29 2001-05-31 2001-11-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-11-29 2005-05-31 2005-11-30 $7700.00 Window Closed / Lapsed

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