US5266524A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device whereby a layer containing aluminium is deposited on a surface of a semiconductor body
Assignee: US Philips Corp
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Filing: 1992-09-17
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Granted: 1993-11-30
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Expires: 2012-09-17
Abstract
Abstract A method of manufacturing a semiconductor device whereby a layer (3) containing aluminium is deposited by means of a sputter deposition process on a surface (1) of a semiconductor body (2) which is placed on a holder (21) in a reaction chamber (20). The semiconductor body (2) is cooled down to a temperature below 150 K. during the deposition process. A smooth, flat layer with a good step coverage is deposited in this way.
Inventors
- 👤 Robertus A. M. Wolters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/158
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A method of manufacturing a semiconductor device whereby a layer comprising aluminium is deposited by means of a sputter deposition process on a surface of a semiconductor body which is placed on a holder in a reaction chamber, characterized in that the semiconductor body is cooled down to a temperature below 150 K. during the deposition process.
Claim 2
Independent Claim
57 words
A method of manufacturing a semiconductor device whereby a layer comprising aluminium is deposited by means of a sputter deposition process on a surface of a semiconductor body which is placed on a holder in a reaction chamber, characterized in that the semiconductor body is cooled down to a temperature below 150 K. during the deposition process.
Claim 3
Dependent Claim
56 words
A method as claimed in claim 1, characterized in that the semiconductor body is cooled down in that the holder on which the semiconductor body is placed is cooled down to a temperature below 150 K., a gas cushion with a pressure of 100 to 2,000 Pa being maintained between the holder and the semiconductor body.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 2, characterized in that the holder on which the semiconductor body is placed is cooled down by means of liquid nitrogen.
Claim 5
Dependent Claim
45 words
A method as claimed in claim 1, characterized in that the sputter deposition process is a two stage process, the semiconductor body not being cooled down until during the second stage, whereas it is kept at a temperature above 0° C. during the first stage.
Claim 6
Dependent Claim
37 words
A method as claimed in claim 4, characterized in that the first stage in the sputter deposition process is carried out at a power which is smaller than that at which the second stage is carried out.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |