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US5265107A Expired / Lapsed US ⏱️ 0.0 years remaining

Broadband absorber having multiple quantum wells of different thicknesses

Assignee: STANFORD UNIVERSITY OTL LLC
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Filing: 1992-02-05
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Granted: 1993-11-23
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Expires: 2012-02-05
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Abstract

Abstract A saturable absorber comprising multiple quantum-well layers (32, 34, 36) of differing thicknesses and separated by barrier layers (38) so as to produce a wide-band absorption. Such a saturable absorber (30) is useful in a hybrid mode-locked laser having an optical cavity defined by two mirrors (10, 12) into which are placed the saturable absorber (30) and an optical amplifier (14) driven by both a DC bias and an RF modulation signal.

Inventors

  • 👤 Peter J. Delfyett, Jr.

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 22:14
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/10; H01S3/11; H01S3/1106; H01S3/1112; H01S3/1115; H01S3/1118; G; G02; G02F; G02F1/00; G02F1/35; G02F1/3523; G02F2202/00; G02F2202/10; G02F2202/108; H01S5/00; H01S5/04; H01S5/042; H01S5/0427; H01S5/06; H01S5/065; H01S5/10; H01S5/14; H01S5/146

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 38 words
A saturable absorber, comprising: a first plurality of semiconductor quantum-well layers having substantially different respective thicknesses the closest values of which vary by no more than approximately 8.3%; and at least one barrier layer separating said quantum-well layers.
Claim 2
Dependent Claim 38 words
A saturable absorber, comprising: a first plurality of semiconductor quantum-well layers having substantially different respective thicknesses the closest values of which vary by no more than approximately 8.3%; and at least one barrier layer separating said quantum-well layers.
Claim 3
Dependent Claim 25 words
A saturable absorber as recited in claim 1, wherein said first plurality comprises at least three of said quantum-well layers having substantially different respective thicknesses.
Claim 4
Dependent Claim 36 words
A saturable absorber as recited in claim 2, wherein said first plurality comprises at least three of said semiconductor quantum-well layers and wherein said different thicknesses have values varying over a range of at least 12%.
Claim 5
Dependent Claim 22 words
A saturable absorber as recited in claim 1, wherein said different thicknesses differ over a range extending for at least 5 nm.
Claim 6
Dependent Claim 30 words
A saturable absorber as recited in claim 1, further comprising a reflective body to which said first plurality of quantum-well layers and said at least one barrier layer are affixed.
Claim 7
Dependent Claim 63 words
A mode-locked laser, comprising: an optical cavity having first and second reflective ends; an optical gain medium disposed in said cavity; and a multiple quantum-well saturable absorber disposed in said cavity and comprising multiple semiconductor quantum-well layers of substantially different thicknesses, the closest values of which vary by no more than approximately 8.3% and which are separated by at least one barrier layer.
Claim 8
Dependent Claim 63 words
A mode-locked laser, comprising: an optical cavity having first and second reflective ends; an optical gain medium disposed in said cavity; and a multiple quantum-well saturable absorber disposed in said cavity and comprising multiple semiconductor quantum-well layers of substantially different thicknesses, the closest values of which vary by no more than approximately 8.3% and which are separated by at least one barrier layer.
Claim 9
Dependent Claim 50 words
A saturable reactor comprising a periodic structure of multiple pluralities of semiconductor quantum-well layers, each of said pluralities of quantum-well layers having substantially different thickness, closest values of said thicknesses of said plurality of quantum-well layers differing by no more than approximately 8.3%, and barrier layers separating said quantum-well layers.
Claim 10
Dependent Claim 50 words
A saturable reactor comprising a periodic structure of multiple pluralities of semiconductor quantum-well layers, each of said pluralities of quantum-well layers having substantially different thickness, closest values of said thicknesses of said plurality of quantum-well layers differing by no more than approximately 8.3%, and barrier layers separating said quantum-well layers.

References Cited (Backward Citations)

US4720309A Cited
US4846931A Cited
US5119227A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-11-22 1997-05-24 1997-11-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-11-22 2001-05-24 2001-11-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-11-22 2005-05-24 2005-11-23 $7700.00 Window Closed / Lapsed

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