Apparatus for preventing glitch for semiconductor non-volatile memory device

Claim 2

A non-volatile semiconductor memory device, comprising: a plurality of non-volatile memory cells for storing binary data arranged in a row and column matrix, each of said memory cells having a control electrode and first and second current terminals, said first current terminal of each of said memory cells connected to a ground potential; column lines respectively connected to the second current terminals of memory cells; row lines having a propagation delay determined by a resistance and a capacitance of a material from which said row lines are formed and respectively connected to the control electrodes of said memory cells; a decoder responsive to address data for selecting one of the memory cells by applying a selection signal to the row line coupled to the memory cell corresponding to the address data; dummy memory cells each having a control electrode and first and second current terminals, said dummy memory cells arranged such that the first current terminal of each dummy memory cell is connected to the ground potential and the second terminal of each dummy memory cell is connected to one of said column lines, said dummy memory cells arranged to be set in an ON state upon being selected; a dummy row line connected to the control electrodes of said dummy memory cells and having a propagation delay equal to that of said row lines; and dummy row line selector means for selecting said dummy row line for a period in which said memory device is not selected by a chip selection signal for selecting said memory device, wherein a time at which a row selection signal propagating on a row line reaches one of said memory cells, thereby selecting said one of said memory cells, and a time at which a signal propagating on said dummy row line reaches the dummy cell coupled to the same column line as said one of said memory cells, are substantially the same.

Claim 3

The device according to claim 1, wherein said dummy row line has the same shape as said row line.

Claim 4

The device according to claim 1, wherein said dummy row line is made of the same material as said row line.

Claim 5

The device according to claim 1, wherein said dummy row line selector means is a lead wire for transmitting said chip selection signal to said dummy row line.

Claim 6

The device according to claim 1, wherein said dummy row line selector means is a buffer amplifier, into which said chip selection signal is input, for current-amplifying said chip selection signal and outputting the current-amplified chip selection signal to said dummy row line.

Claim 7

The device according to claim 1, wherein said dummy row line selector means is an inverter, into which said chip selection signal is input, for inverting said chip selection signal and outputting the inverted chip selection signal to said dummy row line.

Claim 8

The device according to claim 1, wherein said dummy cells have the same structure as said non-volatile memory cells.

Claim 9

The device according to claim 1, wherein said non-volatile memory cells comprise non-volatile memory cell transistors.

Claim 10

A non-volatile semiconductor memory device, comprising: a plurality of non-volatile memory cell transistors arranged in a row and column matrix, each of said memory cell transistors having a control electrode and first and second current terminals, said first current terminal of each of said memory cell transistors coupled to a first reference potential; column lines respectively coupled to the second current terminal of memory cell transistors in a column of said matrix; row lines having a propagation delay determined by a resistance and a capacitance of a material from which said row lines are formed and respectively coupled to the control electrode of memory cell transistors in a row of said matrix; a decoder responsive to address data for selecting a memory cell by applying a selection signal to the row line coupled to the memory cell corresponding to the address data; a read/write enabling circuit responsive to a first level of an enable signal for enabling reading and writing of data to the memory cell transistors; dummy memory cell transistors each having a control electrode and first and second current terminals, said dummy cell memory transistors arranged such that the first current terminal of each dummy memory cell transistor is coupled to a respective column line and the second current terminal of each dummy memory cell transistor is coupled to the first reference potential; a dummy row line, having a propagation delay equal to that of said row lines, on which a dummy row selection signal is propagated and which is coupled to the control electrode of each dummy memory cell transistor; and a dummy row line selector responsive to the first level of the enable signal for switching OFF the dummy memory cell transistor coupled to the same column line as an address memory cell transistor substantially simultaneously with an application of the selection signal to the addressed memory cell transistor.

Claim 11

A non-volatile semiconductor memory device, comprising: a plurality of non-volatile memory cell transistors arranged in a row and column matrix, each of said memory cell transistors having a control electrode and first and second current terminals, said first current terminal of each of said memory cell transistors coupled to a first reference potential; column lines respectively coupled to the second current terminal of memory cell transistors in a column of said matrix; row lines having a propagation delay determined by a resistance and a capacitance of a material from which said row lines are formed and respectively coupled to the control electrode of memory cell transistors in a row of said matrix; a decoder responsive to address data for selecting a memory cell by applying a selection signal to the row line coupled to the memory cell corresponding to the address data; a read/write enabling circuit responsive to a first level of an enable signal for enabling reading and writing of data to the memory cell transistors; dummy memory cell transistors each having a control electrode and first and second current terminals, said dummy cell memory transistors arranged such that the first current terminal of each dummy memory cell transistor is coupled to a respective column line and the second current terminal of each dummy memory cell transistor is coupled to the first reference potential; a dummy row line, having a propagation delay equal to that of said row lines, on which a dummy row selection signal is propagated and which is coupled to the control electrode of each dummy memory cell transistor; and a dummy row line selector responsive to the first level of the enable signal for switching OFF the dummy memory cell transistor coupled to the same column line as an address memory cell transistor substantially simultaneously with an application of the selection signal to the addressed memory cell transistor.

Claim 12

The non-volatile semiconductor memory device according to claim 9 wherein the first reference potential is ground potential.

Claim 13

The non-volatile semiconductor memory device according to claim 9 wherein said dummy row line is composed of the same material as said row lines such that a time constant for signals applied to said row lines and said dummy row line are substantially the same.

Claim 14

The non-volatile semiconductor memory device according to claim 11 wherein said dummy row line selector is further responsive to a second level of the enable signal for switching ON said dummy memory cell transistors to set said column lines at a second reference potential.

Claim 15

The non-volatile semiconductor memory device according to claim 12 wherein the second reference potential is ground potential.

Claim 16

The non-volatile semiconductor memory device according to claim 11 wherein said dummy row line selector means includes a lead wire for transmitting the enable signal to said dummy row line.

Claim 17

The non-volatile semiconductor memory device according to claim 11 wherein said dummy row line selector means includes a buffer amplifier for receiving and amplifying the enable signal and outputting the amplified signal to said dummy row line.

Claim 18

The non-volatile semiconductor memory device according to claim 11 wherein said dummy row line selector means includes an inverter for receiving and inverting the chip enable signal and outputting the inverted signal to said dummy row line.