Main memory DRAM interface

Claim 2

An interface for a memory array including a multiplicity of DRAMs organized as a partition providing data storage and data coherency storage, said interface comprising: a) a RAS controller residing on a first semiconductor substrate, said RAS controller receiving a RAS strobe signal, said RAS controller generating a data RAS signal and a data coherency RAS signal, said data RAS signal having a minimum skew with respect to said data coherency RAS signal for reducing access time of said DRAMs; and b) a CAS controller residing on a second semiconductor substrate, said CAS controller receiving a memory array write enable signal and a CAS strobe signal, said CAS controller generating a multiplicity of byte CAS signals and a multiplicity of byte write enable signals for said partition, said multiplicity of byte CAS signals having a minimum skew with respect to said multiplicity of byte write enable signals for reducing access time of said DRAMs.

Claim 3

The interface of claim 1 wherein said CAS controller latches said multiplicity of byte write enable signals.

Claim 4

The interface of claim 1 further comprising a latch for receiving memory array address signals and providing partition address signals.

Claim 5

The interface of claim 1 wherein data coherency is supported on byte boundaries.

Claim 6

The interface of claim 1 wherein data coherency is supported on partition boundaries.

Claim 7

The interface of claim 1 wherein said data storage is implemented using by-four DRAMs and said data coherency storage is implemented using by-one DRAMS.

Claim 8

The interface of claim 6 where in said multiplicity of DRAMs are all of one technology.

Claim 9

An interface for a memory array including a multiplicity of DRAMs organized as a first multiplicity of partitions, each partition including data storage and data coherency storage, each of said partitions including a second multiplicity of bytes, said interface comprising: a) a RAS controller residing on a first semiconductor substrate, said RAS controller receiving a RAS strobe signals and partition select signals for selecting one of said first multiplicity of partitions, said RAS controller generating a data RAS signal and an associated data coherency RAS signal for a selected partition, said data RAS signal having a minimum skew with respect to said associated data coherency signal for reducing access time of said DRAMs; and b) a CAS controller residing on a second semiconductor substrate, said CAS controller receiving a first multiplicity of partition write enable signals and receiving a CAS strobe signal, said CAS controller generating a second multiplicity of byte CAS signals and a second multiplicity of byte write enable signals for said selected partition, said byte CAS signals having a minimum skew with respect to said byte write enable signals for reducing access time of said DRAMs.

Claim 10

An interface for a memory array including a multiplicity of DRAMs organized as a first multiplicity of partitions, each partition including data storage and data coherency storage, each of said partitions including a second multiplicity of bytes, said interface comprising: a) a RAS controller residing on a first semiconductor substrate, said RAS controller receiving a RAS strobe signals and partition select signals for selecting one of said first multiplicity of partitions, said RAS controller generating a data RAS signal and an associated data coherency RAS signal for a selected partition, said data RAS signal having a minimum skew with respect to said associated data coherency signal for reducing access time of said DRAMs; and b) a CAS controller residing on a second semiconductor substrate, said CAS controller receiving a first multiplicity of partition write enable signals and receiving a CAS strobe signal, said CAS controller generating a second multiplicity of byte CAS signals and a second multiplicity of byte write enable signals for said selected partition, said byte CAS signals having a minimum skew with respect to said byte write enable signals for reducing access time of said DRAMs.

Claim 11

The interface of claim 8 wherein said CAS controller latches said first multiplicity of partition write enable signals.

Claim 12

The interface of claim 8 further comprising a latch for receiving memory array address signals and providing partition address signals.

Claim 13

The interface of claim 8 wherein data coherency is supported on byte boundaries.

Claim 14

The interface of claim 8 wherein data coherency is supported on partition boundaries.

Claim 15

The interface of claim 8 wherein said data storage is implemented using by-four DRAMs and said data coherency storage is implemented using by-one DRAMS.

Claim 16

The interface of claim 13 where in said multiplicity of DRAMs are all of the same technology.

Claim 17

An interface for a memory array including a multiplicity of DRAMs organized as two interleaved banks, a bank A and a bank B, each of said banks having a first multiplicity of partitions, each partition including data storage and data coherency storage, each of said partitions including a second multiplicity of bytes, said interface comprising: a) a RAS controller residing on a first substrate, said RAS controller receiving a bank A RAS strobe signal and a first multiplicity of bank A partition select signals for selecting one of said first multiplicity of bank A partitions, said RAS controller generating a bank A data RAS signal and a bank A data coherency RAS signal for a selected partition within said bank A, said bank A data RAS signal having a minimum skew with respect to said bank A data coherency RAS signal, said RAS controller receiving a bank B RAS strobe signal and a first multiplicity of bank B partition select signals for selecting one of said first multiplicity of partitions within said bank B, said RAS controller generating a bank B data RAS signal and a bank B data coherency RAS signal for a selected partition within said bank B, said bank B data RAS signal having a minimum skew with respect to said bank B data coherency RAS signal; and b) a CAS controller residing on a second substrate, receiving a first multiplicity of bank A write enable signals and a bank A CAS strobe, said CAS controller generating a second multiplicity of bank A byte CAS signals and a second multiplicity of bank A byte write enable signals for said selected partition within said bank A, said bank A byte CAS signals having a minimum skew with respect to said bank A byte write enable signals, said CAS controller receiving a first multiplicity of bank B write enable signals and a bank B CAS strobe, said CAS controller generating a second multiplicity of bank B byte CAS signals and a second multiplicity of bank B byte write enable signals for said selected partition within said bank B, said bank B byte CAS signals having a minimum skew with respect to bank B byte write enable signals.

Claim 18

An interface for a memory array including a multiplicity of DRAMs organized as two interleaved banks, a bank A and a bank B, each of said banks having a first multiplicity of partitions, each partition including data storage and data coherency storage, each of said partitions including a second multiplicity of bytes, said interface comprising: a) a RAS controller residing on a first substrate, said RAS controller receiving a bank A RAS strobe signal and a first multiplicity of bank A partition select signals for selecting one of said first multiplicity of bank A partitions, said RAS controller generating a bank A data RAS signal and a bank A data coherency RAS signal for a selected partition within said bank A, said bank A data RAS signal having a minimum skew with respect to said bank A data coherency RAS signal, said RAS controller receiving a bank B RAS strobe signal and a first multiplicity of bank B partition select signals for selecting one of said first multiplicity of partitions within said bank B, said RAS controller generating a bank B data RAS signal and a bank B data coherency RAS signal for a selected partition within said bank B, said bank B data RAS signal having a minimum skew with respect to said bank B data coherency RAS signal; and b) a CAS controller residing on a second substrate, receiving a first multiplicity of bank A write enable signals and a bank A CAS strobe, said CAS controller generating a second multiplicity of bank A byte CAS signals and a second multiplicity of bank A byte write enable signals for said selected partition within said bank A, said bank A byte CAS signals having a minimum skew with respect to said bank A byte write enable signals, said CAS controller receiving a first multiplicity of bank B write enable signals and a bank B CAS strobe, said CAS controller generating a second multiplicity of bank B byte CAS signals and a second multiplicity of bank B byte write enable signals for said selected partition within said bank B, said bank B byte CAS signals having a minimum skew with respect to bank B byte write enable signals.

Claim 19

The interface of claim 15 wherein said CAS controller latches said first multiplicity of bank A write enable signals and said first multiplicity of bank B write enable signals.

Claim 20

The interface of claim 15 further comprising a latch for receiving memory array address signals and providing bank A partition address signals and bank B partition address signals.

Claim 21

The interface of claim 15 wherein data coherency is supported on byte boundaries.

Claim 22

The interface of claim 15 wherein data coherency is supported on partition boundaries.

Claim 23

The interface of claim 15 wherein said data storage is implemented using by-four DRAMs and said data coherency storage is implemented using by-one DRAMs.

Claim 24

The interface of claim 20 where in said multiplicity of DRAMs are all of the same technology.

Claim 25

The interface of claim 15 wherein said RAS controller latches said bank A partition select signals and latches said bank B partition select signals.

Claim 26

The interface claim 15 wherein said signals input to said interface and output from said bank A data bus and from said bank B data bus comprise no more than 150 signals.