US5262337A
Expired / Lapsed
US
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Method of making a metal oxide semiconductor field effect transistor having a convex channel region
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1992-03-11
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Granted: 1993-11-16
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Expires: 2012-03-11
Abstract
Abstract A metal oxide semiconductor field effect transistor (MOSFET) and a method of making the same, capable of avoiding the generating of a high horizontal electric field in low concentration source and drain regions. In accordance with the invention, a p-type substrate is patterned to form a channel region of a convex type thereon. At opposite side portions of the channel region, low concentration source and drain regions are formed which is in turn covered with a gate. High concentration source and drain regions are formed in the portions of the substrate disposed outwardly of opposite side portions of the gate and near the surface of the substrate. Electric fields of low concentration source and drain regions can be controlled by the gate, since the regions are connected to the gate, via the gate oxide layer. As a result, it is possible to avoid the generation of a high horizontal electric field in low concentration source and drain regions.
Inventors
- 👤 SHi H. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:13
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/01; H10D62/021; H10D30/00; H10D30/60; H10D30/601; H10D30/608
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
196 words
A method of forming a metal oxide semiconductor field effect transistor comprising the steps of: (a) forming a mask for defining a channel region on a substrate of a first conduction type; (b) etching said substrate by using said mask to form a convex channel region thereon having an upper surface and a pair of opposed side portions; (c) implanting and diffusing a low concentration of ions of a second conduction type in both side portions of said convex channel region and an adjacent surface of said substrate by using said mask to form low concentration source and drain regions at the same portions; respectively; (d) stripping said mask and then forming a gate insulation layer on the whole surface of said substrate; (e) forming a gate on the gate insulation layer such that the gate covers the upper surface and side portions of the convex channel region; and (f) implanting and diffusing a high concentration of ions of the second conduction type in portions of the substrate corresponding to both side portions of the gate by using the gate as a mask, to form high concentration source and drain regions at the same portions respectively.
Claim 2
Independent Claim
196 words
A method of forming a metal oxide semiconductor field effect transistor comprising the steps of: (a) forming a mask for defining a channel region on a substrate of a first conduction type; (b) etching said substrate by using said mask to form a convex channel region thereon having an upper surface and a pair of opposed side portions; (c) implanting and diffusing a low concentration of ions of a second conduction type in both side portions of said convex channel region and an adjacent surface of said substrate by using said mask to form low concentration source and drain regions at the same portions; respectively; (d) stripping said mask and then forming a gate insulation layer on the whole surface of said substrate; (e) forming a gate on the gate insulation layer such that the gate covers the upper surface and side portions of the convex channel region; and (f) implanting and diffusing a high concentration of ions of the second conduction type in portions of the substrate corresponding to both side portions of the gate by using the gate as a mask, to form high concentration source and drain regions at the same portions respectively.
Claim 3
Dependent Claim
17 words
A method in accordance with claim 1, wherein said gate insulation layer is formed by thermal oxidation.
Claim 4
Dependent Claim
23 words
A method in accordance with claim 1, wherein said implantation of high concentration ions having a second conduction type is carried out vertically.
Claim 5
Dependent Claim
17 words
A method in accordance with claim 1, wherein said mask for defining a channel region is photoresist.
Claim 6
Dependent Claim
27 words
The method in accordance with claim 1, wherein said implantation of low concentration ions having a second conduction type is carried out inclinedly by a tilt process.
Claim 7
Dependent Claim
43 words
A method in accordance with claim 9, wherein said tilt ion implantation is carried out at angles causing the ions to impinge the opposite side portions of the channel region and the surfaces of the substrate adjacent side portions of the channel region.
References Cited (Backward Citations)
JPS6197970A
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US5057444A
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JPH027475A
Cited
JPH02122569A
Cited
JPH02156642A
Cited
US4960723A
Cited
JPH03108727A
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US5041885A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-15 | 2005-05-17 | 2005-11-16 | $7700.00 | Window Closed / Lapsed |