Foldback switching material and devices

Claim 2

A foldback switching material comprising: a) an insulating matrix; and b) conductive particles, which have particle sizes in the range 10 microns to two hundred microns and are spaced at least 1000 Angstroms apart, dispersed in the matrix; which material has a very high electrical resistance at an applied voltage below a clamping voltage and a very low electrical resistance at an applied voltage above the clamping voltage.

Claim 3

A material according to claim 1, wherein the distance between conductive particles is at least 5000 Angstroms.

Claim 4

A material according to claim 1 wherein the matrix is an electrical insulator.

Claim 5

A material according to claim 1 wherein the matrix material is selected from the class of organic polymers such as polyethylene, polypropylene, (polyvinyl chloride), natural or synthetic rubbers, urethanes, epoxies, silicone rubbers, fluoropolymers, and polymer blends and alloys.

Claim 6

A material according to claim 1 wherein the matrix material is selected from the class of materials including ceramics, and refractory alloys.

Claim 7

A material according to claim 1 wherein the matrix material is a glass.

Claim 8

A material according to claim 1 wherein the matrix material includes fumed silicon dioxide, quartz, alumina, aluminum trihydrate, feldspar, silica, barium sulphate, barium titanate, calcium carbonate, woodflour, crystalline silica, talc, mica, or calcium sulphate.

Claim 9

A material according to claim 1 wherein the conductive particles comprise at least one of powders of nickel aluminum, beryllium, iron, gold, silver, platinum, lead, tin, bronze, brass, copper, bismuth, cobalt, magnesium, molybdenum, palladium, tantalum, tungsten and alloys thereof.

Claim 10

A material according to claim 1 wherein the conductive particles comprise at least one of hollow or solid glass spheres each coated with at least one conductor selected from powders of nickel, aluminum, beryllium, iron, gold, silver, platinum, lead, tin, bronze, brass, copper, bismuth, cobalt, magnesium, molybdenum, palladium, tantalum, tungsten and alloys thereof.

Claim 11

A material according to claim 1 wherein the conductive particles have resistivities ranging from about 10 -1 to 10 -6 ohm-centimeters.

Claim 12

A material according to claim 1 wherein the percentage, by volume, of conductive particles in the material is greater than about 0.5% and less than about 50%.

Claim 13

A material according to claim 1 which also comprises semiconductive particles.

Claim 14

A material according to claim 12, wherein the semiconductive particles comprise one or more of carbides including one or more of silicon carbide, titanium carbide, boron carbide, tungsten carbide, and tantalum carbide; powders based on carbon including carbon black and graphite; metal nitrides and metal borides.

Claim 15

A material according to claim 12 also comprising hollow or solid glass spheres coated with a semi-conductor comprising at least one of carbides including one or more of silicon carbide, titanium carbide, boron carbide, tungsten carbide and tantalum carbide; one or more of powders based on carbon including carbon black and graphite; metal nitrides and metal borides.

Claim 16

A foldback switching device comprising a foldback switching material positioned between electrodes, the material comprising: a) an insulating matrix; and b) conductive particles, which have particle sizes in the range from 10 microns to 200 microns and are spaced at least 1000 Angstroms apart, dispersed in the matrix; the material having a very high electrical resistance at applied voltages below a clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 17

A foldback switching device comprising a foldback switching material positioned between electrodes, the material comprising: a) an insulating matrix; and b) conductive particles, which have particle sizes in the range from 10 microns to 200 microns and are spaced at least 1000 Angstroms apart, dispersed in the matrix; the material having a very high electrical resistance at applied voltages below a clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 18

A foldback switching device according to claim 15 which conducts transient electrical pulses having an amplitude greater than the clamping voltage of the device from one electrode to another by undergoing dielectric breakdown.

Claim 19

A device according to claim 15, which, after switching and thereby clamping at least 15 transient electrical pulses having an amplitude greater than the clamping voltage of the device, continues to exhibit a very high electrical resistance at applied voltages below the clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 20

A device according to claim 17, which, after switching and thereby clamping at least 100 transient electrical pulses having an amplitude greater than the clamping voltage of the device, continues to exhibit a very high electrical resistance at applied voltages below the clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 21

A device according to claim 17, which, after switching and thereby clamping at least 500 transient electrical pulses having an amplitude greater than the clamping voltage of the device, continues to exhibit a very high electrical resistance at applied voltages below the clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 22

A device according to claim 17, which, after switching and thereby clamping at least 1000 transient electrical pulses having an amplitude greater than the clamping voltage of the device, continues to exhibit a very high electrical resistance at applied voltages below the clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 23

An electrical circuit, which is subject to voltage transients, comprising: (A) an electrical component which is damaged by application of such a transient thereunto; (B) a current carrying line; (C) an earth and (D) a foldback switching device, connected between the current carrying line and earth, which comprises a foldback switching material positioned between electrodes, the material comprising: a) an insulating matrix; and b) conductive particles, which have particle sizes in the range 10 microns to two hundred microns and are spaced at least 1000 Angstroms apart, dispersed in the matrix; and the material having a very high electrical resistance at applied voltages below a clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.

Claim 24

An electrical circuit, which is subject to voltage transients, comprising: (A) an electrical component which is damaged by application of such a transient thereunto; (B) a current carrying line; (C) an earth and (D) a foldback switching device, connected between the current carrying line and earth, which comprises a foldback switching material positioned between electrodes, the material comprising: a) an insulating matrix; and b) conductive particles, which have particle sizes in the range 10 microns to two hundred microns and are spaced at least 1000 Angstroms apart, dispersed in the matrix; and the material having a very high electrical resistance at applied voltages below a clamping voltage and a very low electrical resistance at applied voltages above the clamping voltage.