US5260230A
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Method of manufacturing buried heterostructure semiconductor laser
Assignee: NTT Inc
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Filing: 1992-07-07
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Granted: 1993-11-09
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Expires: 2012-07-07
Abstract
Abstract According a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor layer are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy.
Inventors
- 👤 Yasuhiro Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:50
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2205; H01S5/2206; H01S5/2275; H01S5/30; H01S5/305; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
123 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: sequentially depositing an active layer and a p-type cladding layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; masking a surface of said deposited layer in a stripe shape and selectively and partially dry etching said cladding layer, said active layer, and part of said semiconductor layer to form a mesa structure; and sequentially depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , a p-type cladding layer, and a p-type cap layer on an entire upper surface of said mesa structure by the metalorganic vapor phase epitaxy.
Claim 2
Independent Claim
123 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: sequentially depositing an active layer and a p-type cladding layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; masking a surface of said deposited layer in a stripe shape and selectively and partially dry etching said cladding layer, said active layer, and part of said semiconductor layer to form a mesa structure; and sequentially depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , a p-type cladding layer, and a p-type cap layer on an entire upper surface of said mesa structure by the metalorganic vapor phase epitaxy.
Claim 3
Dependent Claim
28 words
A method according to claim 1, wherein said n-type semiconductor layer consists of an n-type semiconductor substrate and an n-type buffer layer formed on said n-type semiconductor substrate.
Claim 4
Dependent Claim
37 words
A method according to claim 1, wherein the step of selectively and partially etching said cladding layer, said active layer, and said semiconductor layer to form a mesa structure is performed by a reactive ion etching method.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein said n-type group III-V semiconductor layer consists of InP.
Claim 6
Dependent Claim
27 words
A method according to claim 1, wherein said current confining layer uses an Se dopant having a concentration of not less than 5×10 18 atoms·cm -3 .
Claim 7
Dependent Claim
18 words
A method according to claim 1, wherein said mask is removed after said current confining layer is formed.
Claim 8
Dependent Claim
17 words
A method according to claim 1, wherein said mask is removed after said mesa structure is formed.
Claim 9
Dependent Claim
27 words
A method according to claim 7, wherein said current confining layer uses an Se dopant having a concentration of not less than 8×10 18 atoms·cm -3 .
Claim 10
Independent Claim
118 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: sequentially depositing an active layer, a p-type cladding layer, and a p-type cap layer on an n-type group III-V semiconductor layer by the metalorganic vapor phase epitaxy; masking a surface of said deposited layer in a stripe shape and selectively and partially dry etching said cap layer, said cladding layer, said active layer, and said semiconductor substrate to form a mesa structure; and sequentially depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 by the metalorganic vapor phase epitaxy to form current constraint and optical confinement layers.
Claim 11
Independent Claim
118 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: sequentially depositing an active layer, a p-type cladding layer, and a p-type cap layer on an n-type group III-V semiconductor layer by the metalorganic vapor phase epitaxy; masking a surface of said deposited layer in a stripe shape and selectively and partially dry etching said cap layer, said cladding layer, said active layer, and said semiconductor substrate to form a mesa structure; and sequentially depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 by the metalorganic vapor phase epitaxy to form current constraint and optical confinement layers.
Claim 12
Dependent Claim
28 words
A method according to claim 9, wherein said n-type semiconductor layer consists of an n-type semiconductor substrate and an n-type buffer layer formed on said n-type semiconductor substrate.
Claim 13
Dependent Claim
37 words
A method according to claim 9, wherein the step of selectively and partially etching said cladding layer, said active layer, and said semiconductor layer to form a mesa structure is performed by a reactive ion etching method.
Claim 14
Dependent Claim
16 words
A method according to claim 9, wherein said n-type group III-V semiconductor layer consists of InP.
Claim 15
Dependent Claim
27 words
A method according to claim 9, wherein said current confining layer uses an Se dopant having a concentration of not less than 5×10 18 atoms·cm -3 .
Claim 16
Dependent Claim
18 words
A method according to claim 9, wherein said mask is removed after said current confining layer is formed.
Claim 17
Independent Claim
121 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: depositing an active layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; masking a surface of said active layer in a stripe shape and selectively partially dry etching said active layer and said semiconductor substrate to form a mesa structure; and removing said mask on the upper layer of said mesa structure, and depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , a p-type cladding layer, and a p-type cap layer on an entire surface of the resultant structure by the metalorganic vapor phase epitaxy.
Claim 18
Independent Claim
121 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: depositing an active layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; masking a surface of said active layer in a stripe shape and selectively partially dry etching said active layer and said semiconductor substrate to form a mesa structure; and removing said mask on the upper layer of said mesa structure, and depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , a p-type cladding layer, and a p-type cap layer on an entire surface of the resultant structure by the metalorganic vapor phase epitaxy.
Claim 19
Dependent Claim
28 words
A method according to claim 15, wherein said n-type semiconductor layer consists of an n-type semiconductor substrate and an n-type buffer layer formed on said n-type semiconductor substrate.
Claim 20
Dependent Claim
34 words
A method according to claim 15, wherein the step of selectively and partially etching said active layer and said semiconductor layer to form a mesa structure is performed by a reactive ion etching method.
Claim 21
Dependent Claim
16 words
A method according to claim 15, wherein said n-type group III-V semiconductor layer consists of InP.
Claim 22
Dependent Claim
27 words
A method according to claim 15, wherein said current confining layer uses an Se dopant having a concentration of not less than 8×10 18 atoms·cm -3 .
Claim 23
Independent Claim
153 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: depositing an active layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; growing said active layer, growing an optical waveguide layer, and forming a diffraction grating in said optical waveguide layer; masking the surface of said optical waveguide layer in a stripe shape after the diffraction grating is formed, and selectively and partially dry etching said optical waveguide layer, said active layer, and said semiconductor substrate to form a mesa structure; and removing said mask on the upper layer of said mesa structure, and depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , and a p-type cladding layer, and a p-type cap layer on an entire surface of the resultant structure by the metalorganic vapor phase epitaxy.
Claim 24
Independent Claim
153 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: depositing an active layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; growing said active layer, growing an optical waveguide layer, and forming a diffraction grating in said optical waveguide layer; masking the surface of said optical waveguide layer in a stripe shape after the diffraction grating is formed, and selectively and partially dry etching said optical waveguide layer, said active layer, and said semiconductor substrate to form a mesa structure; and removing said mask on the upper layer of said mesa structure, and depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5×10 18 atoms·cm -3 , and a p-type cladding layer, and a p-type cap layer on an entire surface of the resultant structure by the metalorganic vapor phase epitaxy.
Claim 25
Dependent Claim
16 words
A method according to claim 20, wherein said n-type group III-V semiconductor layer consists of InP.
Claim 26
Dependent Claim
27 words
A method according to claim 20, wherein said current confining layer uses an Se dopant having a concentration of not less than 8×10 18 atoms·cm -3 .
Claim 27
Independent Claim
110 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: sequentially depositing an active layer and a p-type cladding layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; masking a surface of said deposited layer in a stripe shape and selectively and partially dry etching said cladding layer, said active layer, and said semiconductor substrate to form a mesa structure; and sequentially depositing a doped p-type current blocking layer, a n-type current confining layer containing a group VI dopant, a p-type cladding layer, and a p-type cap layer on an entire upper surface of said mesa structure by the metalorganic vapor phase epitaxy.
Claim 28
Independent Claim
110 words
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of: sequentially depositing an active layer and a p-type cladding layer on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy; masking a surface of said deposited layer in a stripe shape and selectively and partially dry etching said cladding layer, said active layer, and said semiconductor substrate to form a mesa structure; and sequentially depositing a doped p-type current blocking layer, a n-type current confining layer containing a group VI dopant, a p-type cladding layer, and a p-type cap layer on an entire upper surface of said mesa structure by the metalorganic vapor phase epitaxy.
References Cited (Backward Citations)
No citation records indexed.
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| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
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