US5260152A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phase shifting mask and method of manufacturing same
Assignee: Sony Corp
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Filing: 1992-04-27
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Granted: 1993-11-09
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Expires: 2012-04-27
Abstract
Abstract A method for manufacture of such a phase shifting mask comprises the steps of forming a light shielding layer on a substrate; forming a photoresist on the light shielding layer; patterning the photoresist to form a resist pattern; providing an opening in the light shielding layer by the use of the resist pattern as a mask, thereby forming a light shielding pattern; etching the substrate anisotropically to form a phase shifting segment; side etching the light shielding pattern to form a light shielding region; and removing the resist pattern.
Inventors
- 👤 Hideo Shimizu
- 👤 Hiroichi Hawahira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:44
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/29
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
88 words
A method for manufacture of a phase shifting mask, comprising the steps of: forming a light shielding layer on a substrate; forming a photoresist on said light shielding layer; patterning said photoresist to form a resist pattern; forming an opening in said light shielding layer by the use of said resist pattern as a mask, thereby forming a light shielding pattern; etching said substrate anisotropically to form a phase shifting segment; side etching said light shielding pattern to form a light shielding region; and removing said resist pattern.
Claim 2
Independent Claim
88 words
A method for manufacture of a phase shifting mask, comprising the steps of: forming a light shielding layer on a substrate; forming a photoresist on said light shielding layer; patterning said photoresist to form a resist pattern; forming an opening in said light shielding layer by the use of said resist pattern as a mask, thereby forming a light shielding pattern; etching said substrate anisotropically to form a phase shifting segment; side etching said light shielding pattern to form a light shielding region; and removing said resist pattern.
Claim 3
Independent Claim
88 words
A method for manufacture of a phase shifting mask, comprising the steps of: forming a light shielding layer on a substrate; forming a photoresist on said light shielding layer; patterning said photoresist to form a resist pattern; forming an opening in said light shielding layer by the use of said resist pattern as a mask, thereby forming a light shielding pattern; etching said substrate anisotropically to form a phase shifting segment; removing said resist pattern; and etching said light shielding pattern isotropically to form a light shielding region.
Claim 4
Independent Claim
88 words
A method for manufacture of a phase shifting mask, comprising the steps of: forming a light shielding layer on a substrate; forming a photoresist on said light shielding layer; patterning said photoresist to form a resist pattern; forming an opening in said light shielding layer by the use of said resist pattern as a mask, thereby forming a light shielding pattern; etching said substrate anisotropically to form a phase shifting segment; removing said resist pattern; and etching said light shielding pattern isotropically to form a light shielding region.
Claim 5
Independent Claim
112 words
A method for manufacture of a phase shifting mask, comprising the steps of: forming a light shielding layer on a substrate; forming a photoresist on said light shielding layer; patterning said photoresist to form a resist pattern; forming an opening in said light shielding layer by the use of said resist pattern as a mask, thereby forming a light shielding pattern; side etching said light shielding pattern to form a light shielding region; depositing a phase shifting material in said opening by the use of said resist pattern as a mask; and removing said resist pattern together with the phase shifting material thereon to form a phase shifting segment in said opening.
Claim 6
Independent Claim
112 words
A method for manufacture of a phase shifting mask, comprising the steps of: forming a light shielding layer on a substrate; forming a photoresist on said light shielding layer; patterning said photoresist to form a resist pattern; forming an opening in said light shielding layer by the use of said resist pattern as a mask, thereby forming a light shielding pattern; side etching said light shielding pattern to form a light shielding region; depositing a phase shifting material in said opening by the use of said resist pattern as a mask; and removing said resist pattern together with the phase shifting material thereon to form a phase shifting segment in said opening.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-08 | 2001-05-10 | 2001-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-08 | 2005-05-10 | 2005-11-09 | $7700.00 | Window Closed / Lapsed |