Electrostatic discharge detection and clamp control circuit

Claim 2

A protection circuit utilizable with an integrated circuit for protecting the integrated circuit features from a pulse of electrostatic discharge ("ESD"), the protection circuit comprising: a. switching means connected to the integrated circuit for shunting the ESD pulse away from the integrated circuit features; and b. control means connected to the switching means for activating the switching means, said control means including a plurality of detection circuits each responsive to a respective selected waveform characteristic of a typical ESD pulse to activate said switch means.

Claim 3

The protection circuit of claim 1, wherein the typical ESD pulse waveform has a rise time characteristic and a duration characteristic, and wherein the control means comprises: a. a first detection circuit which changes from logical 0 to logical 1 according to a first ramp up time which exceeds the rise time of the typical ESD pulse but is less than the duration of the typical ESD pulse; b. a second detection circuit which changes from logical 0 to logical 1 according to a second ramp up time which exceeds the duration of a noise pulse; c. a third detection circuit which changes from logical 0 to logical 1 according to a third ramp up time which approximates the duration of the typical ESD pulse, whereby the switching means is turned on by a logical 0 from the first detection circuit, and wherein the switching means is latched on when the second detection circuit changes to logical 1, and wherein the switching means is turned off when the third detection circuit changes to logical 1.

Claim 4

The protection circuit of claim 2, wherein the first, second, and third detection circuit comprise a first, second, and third RC network, respectively.

Claim 5

The protection circuit of claim 2, wherein the rise time of the typical ESD pulse ranges from one to twenty nanoseconds, and wherein the duration of the typical ESD pulse ranges from one hundred to one thousand nanoseconds.

Claim 6

A protection circuit utilizable with an integrated circuit for protecting the integrated circuit features from a pulse of electrostatic discharge ("ESD"), wherein a typical ESD pulse waveform has a characteristic rise time ranging from one to twenty nanoseconds and a characteristic duration ranging from one hundred to one thousand nanoseconds, comprising: a. switching means connected to the integrated circuit for shunting the ESD pulse away from the integrated circuit features; b. a NAND gate having a first input, a second input, and an output which drives the switching means; c. a first RC network driving the first input of the NAND gate, said first RC network having a first time constant which exceeds the characteristic rise time of the typical ESD pulse, but is less than the characteristic duration of the typical ESD pulse; and d. a feedback loop connected to the output of the NAND gate and driving the second input of the NAND gate, comprising: i. an inverter having an input and an output; ii. a second RC network connected between the output of the NAND gate and the input of the inverter, said second RC network having a second time constant which exceeds the duration of a noise pulse; iii. a third RC network connected between the output of the inverter and the second input of the NAND gate, said third RC network having a third time constant which approximates the characteristic duration of the typical ESD pulse; whereupon application of the ESD pulse causes the first input to drive the NAND gate, thus turning on the switching element, and if the ESD pulse is still present when the second time constant is exceeded, the switching means is latched on via the second input until the third time constant is exceeded.

Claim 7

A protection circuit utilizable with an integrated circuit for protecting the integrated circuit features from a pulse of electrostatic discharge ("ESD"), wherein a typical ESD pulse waveform has a characteristic rise time ranging from one to twenty nanoseconds and a characteristic duration ranging from one hundred to one thousand nanoseconds, comprising: a. switching means connected to the integrated circuit for shunting the ESD pulse away from the integrated circuit features; b. a NAND gate having a first input, a second input, and an output which drives the switching means; c. a first RC network driving the first input of the NAND gate, said first RC network having a first time constant which exceeds the characteristic rise time of the typical ESD pulse, but is less than the characteristic duration of the typical ESD pulse; and d. a feedback loop connected to the output of the NAND gate and driving the second input of the NAND gate, comprising: i. an inverter having an input and an output; ii. a second RC network connected between the output of the NAND gate and the input of the inverter, said second RC network having a second time constant which exceeds the duration of a noise pulse; iii. a third RC network connected between the output of the inverter and the second input of the NAND gate, said third RC network having a third time constant which approximates the characteristic duration of the typical ESD pulse; whereupon application of the ESD pulse causes the first input to drive the NAND gate, thus turning on the switching element, and if the ESD pulse is still present when the second time constant is exceeded, the switching means is latched on via the second input until the third time constant is exceeded.